• Journal of Oral Medicine and Pain
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• 제47권2호
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• pp.102-106
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• 2022

Necrotizing sialometaplasia is a rare, benign, self-limiting inflammatory process, with most cases occurring in the palatal region. Although the pathophysiology of this condition remains unknown, it has generally been considered an ischemic reaction involving the minor salivary glands. Due to its clinical and histologic similarities to malignant salivary gland tumor, diagnostic biopsy is required. Careful monitoring is also recommended, and clinicians should provide sufficient information for pathologists to ensure the histologic diagnosis.

• 한국의류산업학회지
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• 제20권3호
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• pp.279-286
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• 2018

This study conducted a qualitative research based on interviews with school teachers and instructors operating external activities about how the management of one's own appearance influence the changes in subjective happiness and self-esteem by focusing on maladjusted students of two alternative schools and ordinary middle and high schools in Gyeongsangnam-do province. Happiness refers to a positive emotion that can be felt continuously throughout life such as life satisfaction, good experience, and positive way of thinking. The sense of happiness is the satisfaction that one feels by interpreting and evaluating his or her experience in a positive way and can be defined as the positive emotions that can be felt when one perceives and uses the strengths and resources that he or she has. Although the self-esteem is formed, changed, and developed throughout life, the self-awareness and self-evaluation develop more actively than other stages of development particularly in adolescence, and the adolescents with low self-esteem are faced with more serious behavioral, scholastic, and psychological issues. I hope the results of this study not only help current adolescents at risk to improve their self-esteem but also become a chance to see the issue of adolescents at risk as a part of social issue instead of limiting the issue as personal or domestic issue by expanding the application scope of the results to adolescents in middle schools and high schools who have the potential of going astray in order to approach the issue on the level of the entire society.

• 한국군사과학기술학회지
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• 제13권6호
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• pp.1058-1063
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• 2010

In this paper, we designed self-frequency synchronizing circuit using image rejection mixer(IRM) and single-sideband(SSB) up-converter which can effectively eliminate the image frequencies occurred in multi-channel super-heterodyne receivers and help us to match inter-channel phase. Also the self-frequency synchronizing circuit simplifies system because there need no extra devices for making intermediate frequency(IF) by creating the local signal within several nanoseconds by means of generating the same frequency of IF signal and modulating radio frequency(RF) signal. We adopt the limiting amplifier for the purpose of protecting the circuit from spurious signals which come from the front end side having wide instantaneous bandwidth characteristics and constantly injecting same level into the input local signal of IRM. The IRM we fabricated has image rejection ratio of 27dB, which is good over 7dB for foreign company's. Also, the SSB up-converter we fabricated has 1dB compression point of 18dBm, which is good over 16dB for foreign company's. And the size is compact about one-forth.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.140-145
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• 2001

In order to apply for silane crosslinking process to PTC products, especially. self-regulating heater, silane crosslinked samples were compared with radiation crosslinked sample in terms of PTC characteristic and PTC stability. Silane crosslinked samples have lower PTC intensity than radiation crosslinked sample. It can be explained that multiple networks of silane crosslink restrict the movement of molecules in the composite as the sample is heating. As a result of heat cycles at $140^{\circ}C$, the changes of volume resistivity and PTC intensity for radiation crosslinked sample were higher than those of silane crosslinked samples. Whereas, in the case of heat cycles at $85^{\circ}C$, which is limiting temperature for self-regulating heater, both silane and radiation crosslinked samples show stable results without pronounce changes of resistivity up to five cycles.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1166-1169
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• 2006

In this study, the effects of SAMs on the performance of OTFTs have been investigated. ALD technique was applied for the deposition of SAMs, which is an ultra-thin film deposition technique based on sequences of self-limiting surface reactions enabling thickness control on atomic scale. According to our investigation results, it is observed that the surface properties of the gate insulator was changed by SAMs, which allow pentacene molecules to be deposited in the upright direction on the gate insulator and hence the performance of OTFTs could be improved. These results will be discussed

• Journal of Korean Vacuum Science & Technology
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• 제2권1호
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• pp.13-19
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• 1998

We have calculated the electronic structure of impurity atoms in metal host by using the tight binding model in the recursion method. For a self-consistent calculation, we assumed that the effect of impurity introduction was localized only at the impurity site and its neighbours. We calculated the Madelung term by limiting the contribution to Vm of the charge perturbations to the first shell around the impurity with Evjen technique. The calculated local density of states and charge transfer values have been compared with the experimental values for a single impurity in metal host. We fund that d-reso-nance state came from the repulsive interaction between impurity d-state and host band, and the position of d-resonance state depended on the difference of valence electrons between the host and the impurity. the results also showed that the charge transfer value between an impurity and host metal was comparable to the ionicity difference between them.

• Bulletin of the Korean Chemical Society
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• 제15권7호
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• pp.563-567
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• 1994

The electroreduction of dioxygen at glassy carbon electrodes with irreversible self-assembly of N-hexadecyl-N'-methyl viologen $(C_{16}VC_1)$ proceeds at potentials more positive than those where the reduction occurs at bare electrodes. The electrocatalyzed reduction takes place at potentials well ahead of those where the catalyst is reduced in the absence of dioxygen and the limiting currents observed at rotating disk electrodes did not deviate from the thoretical Levich line up to 6400 rpm, indicating that the electrocatalysis is extremely rapid. The rate constant for the heterogeneous reaction between $C_{16}V^+C_1$ immobilized on the electrode surface and $O_2$ in solution was estimated to be ca. $10^8\;M^{-1}s^{-1}$. The half-wave potential of dioxygen reduction was independent of solution pH.

• 전자공학회논문지CI
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• 제43권3호
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• pp.39-49
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• 2006

본 논문에서는 비전 기술에 기반을 둔 손 모양 인식 시스템의 성능 향상을 위하여 강화학습에 의한 손 모양 인식 방법을 제안한다. 비전 센서에 기반을 둔 손 모양 인식은 손의 높은 자유도로 인한 자체 겹침 (self-occlusion) 현상과 관찰 방향 변화에 따른 입력 영상의 다양함으로 인식에 어려움이 따른다. 따라서 비전 기반 손 모양 인식의 경우, 카메라와 손 간의 상대적인 각도에 제한을 두거나 여러 대의 카메라를 배치하는 것이 일반적이다. 그러나 카메라와 손 간의 상대적 각도에 제한을 두는 경우에는 사용자의 움직임에 제약이 따르게 되며, 여러 대의 카메라를 사용할 경우에도 각 입력된 영상에 대한 인식 결과를 최종 인식 결과에 반영하는 방식에 대하여 추가적인 고려를 해야 한다. 본 논문에서는 비전 기반 손 모양 인식의 이러한 문제점을 개선하기 위하여 인식 과정에서 사용되는 특징을 손 구조적인 각도 정보와 손 윤곽선 정보로 나누고 강화학습을 통하여 각 특징간의 연관성을 정의하는 방식을 제안한다. 또한 제안된 방법을 세 대의 카메라를 이용한 손 모양 인식 시스템에 적용하여 유용성을 검증한다.

• 한국재료학회지
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• 제23권8호
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• pp.405-422
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• 2013

Atomic layer deposition(ALD) is a promising deposition method and has been studied and used in many different areas, such as displays, semiconductors, batteries, and solar cells. This method, which is based on a self-limiting growth mechanism, facilitates precise control of film thickness at an atomic level and enables deposition on large and three dimensionally complex surfaces. For instance, ALD technology is very useful for 3D and high aspect ratio structures such as dynamic random access memory(DRAM) and other non-volatile memories(NVMs). In addition, a variety of materials can be deposited using ALD, oxides, nitrides, sulfides, metals, and so on. In conventional ALD, the source and reactant are pulsed into the reaction chamber alternately, one at a time, separated by purging or evacuation periods. Thermal ALD and metal organic ALD are also used, but these have their own advantages and disadvantages. Furthermore, plasma-enhanced ALD has come into the spotlight because it has more freedom in processing conditions; it uses highly reactive radicals and ions and for a wider range of material properties than the conventional thermal ALD, which uses $H_2O$ and $O_3$ as an oxygen reactant. However, the throughput is still a challenge for a current time divided ALD system. Therefore, a new concept of ALD, fast ALD or spatial ALD, which separate half-reactions spatially, has been extensively under development. In this paper, we reviewed these various kinds of ALD equipment, possible materials using ALD, and recent ALD research applications mainly focused on materials required in microelectronics.

• 반도체디스플레이기술학회지
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• 제20권4호
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• pp.157-160
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• 2021

As an insulator for a thin film transistor(TFT) and an encapsulation material of organic light emitting diode(OLED), aluminum oxide (Al₂O₃) has been widely studied using several technologies. Especially, in spite of low deposition rate, atomic layer deposition (ALD) has been used as a process method of Al₂O₃ because of its low process temperature and self-limiting reaction. In the Al₂O₃ deposition by ALD method, Ar Purge had some crucial effects on the film properties. After reaction gas is injected as a formation of pulse, an inert argon(Ar) purge gas is injected for gas desorption. Therefore, the process parameter of Ar purge gas has an influence on the ALD deposited film quality. In this study, Al₂O₃ was deposited on glass substrate at a different Ar purge time and its structural characteristics were investigated and analyzed. From the results, the growth rate of Al₂O₃ was decreased as the Ar purge time increases. The surface roughness was also reduced with increasing Ar purge time. In order to obtain the high quality Al₂O₃ film, it was known that Ar purge times longer than 15 sec was necessary resulting in the self-limiting reaction.