• Title/Summary/Keyword: self-Pulsed

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Convection Effects on PGSE-NMR Self-Diffusion Measurements at Low Temperature: Investigation into Sources of Induced Convective Flows

  • Chung, Kee-Choo;Yu, Hyo-Yeon;Ahn, Sang-Doo
    • Bulletin of the Korean Chemical Society
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    • v.32 no.6
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    • pp.1970-1974
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    • 2011
  • The effects of convection on the measurement of the diffusion coefficients of liquids by the pulsed gradient spin echo (PGSE) NMR method at low temperature are discussed. To examine the generation of convective flows, we used four different types of sample tubes in the diffusion measurements with temperature variation; a normal 5 mm NMR tube, a Shigemi tube, an ELISE type tube, and a capillary tube. Below room temperature, the calculated diffusion coefficients of chloroform in 5 mm o.d. type tubes increased with decreasing temperature, while those in the capillary tube decreased linearly. The convective flow was found to be significant even at low temperature and it seemed to be mainly induced by the transverse temperature gradient. It was also found that the capillary tube was most appropriate to measure the diffusion coefficients, since its small diameter is effective in suppressing the convective flows at both high and low temperatures.

Measurement of a Threshold Initiation Carrier Density for a Reduction in Gas Breakdown Voltage

  • Park, Hyunho;Kim, Youngmin
    • Journal of Electrical Engineering and Technology
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    • v.13 no.6
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    • pp.2421-2424
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    • 2018
  • A direct measurement of an initiation carrier injection for a low voltage discharge is presented. A self-sustained pulsed discharge is utilized to characterize electrical responses of a glow discharge for varying amounts of injected initiation carriers. It is clearly demonstrated that the initiation carrier injection affects the ignition time and the breakdown voltage of the primary discharge. An abrupt reduction in the breakdown voltage for a $300{\mu}m$ gap pin-plate discharge is observed when a threshold carrier density of $3{\times}10^{11}cm^{-3}$ is injected and the breakdown voltage continues to decrease to 250 V with increasing the initiation carrier injection beyond the threshold density.

Numerical studied on consequenses of the ion pumping effect in helicon plasmas (헬리콘 플라즈마에서 이온 펌핑 효과의 영향에 대한 수치적 해석 연구)

  • 조수원;박인호;최성을;권명회
    • Journal of the Korean Vacuum Society
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    • v.8 no.3B
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    • pp.353-360
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    • 1999
  • The global balance model is applied to investigate the transient behavior of the electron density and temperature in helicon plasmas. The power absorption calculated from the solutions of the Maxwell equations is used in solving the power balance equation. A balance model for the neutral gas is also considered to fins its density self-consistently. It is turned out that the numerical results reasonably explain consequences of the ion pumping effect including the occurrence of two distinct modes of pulsed helicon discharge which have been observed experimentally. The behavior of the discharge parameters are fond to be primarily dependent on the power absorption and the gas flow rate, but the pressure controls the electron density and temperature of the final steady state as well as the transient state even with the same flow rate. Finally, it is shown that the electron density virtually the linear relationship between the density and the magnetic field is retained for a higher pressure when the effect of the ion pumping is negligible.

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고온 연소 합성법을 이용한 탄화규소(SiC)의 합성 및 핵연료 도포 연구

  • Choi, Yong;Lee, Jeong-Won;Lee, Young-Woo;Son, Dong-Seong
    • Proceedings of the Korean Nuclear Society Conference
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    • 1996.05c
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    • pp.225-230
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    • 1996
  • 탄화규소(SiC)가 도포된 핵연료 제조를 위해 고온 연소 합성법(Self-propagating High Temperature Synthesis, SHS)이 적용되었으며, 반응물로 규소(Si) 분말, 규소 박막 (Si-thin film), 흑연 분말과 카본(C) 화이버가 사용되었다. 규소 박막은 프라즈마가 강화된 화학증착법(a microwave pulsed electron cyclotron resonance plasma enhanced chemical vapor deposition)으로 준비되었다. 그 결과 규소와 탄소의 고온 연소 합성반응 생성물은 반응물이 분말이거나 박막에 관계없이. 탄화규소(SiC)가 합성되었으며, 생성물의 형상(morphology)은 초기 탄소의 형상에 의존하였다. 본 연구를 통해 고온 연소 합성법이 탄화규소와 탄소가 도포된 핵연료 제조에 적용 가능함을 알 수 있었다.

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Measurement of Branching Ratio for broad 27-keV Resonance of $^{19}F(n,g)^{20}F$ Reaction by using Time-of-flight Method with Anti-Compton NaI(Tl) Spectrometer

  • Lee, Sam-Yol
    • Journal of the Korean Society of Radiology
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    • v.2 no.1
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    • pp.31-34
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    • 2008
  • The neutron capture spectrum for the light nuclide was very useful to study the nuclear structure. In the present study, the capture gamma-ray from the 27-keV resonance of $^{19}F(n,g)^{20}F$ reaction were measured with an anti-Compton NaI(Tl) spectrometer and the 3-MV Pelletron accelerator of the Research Laboratory for Nuclear Reactors at the Tokyo institute of technology. A neutron Time-of-Flight method was adopted with a 1.5 ns pulsed neutron source by the $^7Li(p,n)^7Be$ reaction. In the present experiment, a Teflon(($CF_2$)n) sample was used The sample was disk with a diameter of 90mm. The thickness of sample was determined so that reasonable counting rates could be obtained and the correction was not so large for the self-shielding and multiple scattering of neutrons in the sample, and was 5mm. The primary gamma-ray transitions were compared with previous measurement of Kenny.

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Morphology Control of Ag-doped ZnO Nanowires by Hot-walled pulse Laser Deposition

  • Kim, Gyeong-Won;Song, Yong-Won;Kim, Sang-Sik;Lee, Sang-Ryeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.04b
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    • pp.25-26
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    • 2009
  • We design and demonstrate the controlled morphologies of Ag-dpped ZnO nanowires (NWs) adopting self-contrived hot-walled pulsed laser deposition (HW-PLD). p-type Ag-doping is ensuired by low temperature photoluminescence (PL) spectrum to find the AoX peak at 3.349 eV. Morphology of grown NWs are controlled by changing the kinetic energy and flux of the ablated particles with adjusting the target - substrate (T-S) distance. The analysis on the resultant NWs is presented.

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Influences of the Filter Effect on Pulse Splitting in Passively Mode-Locked Fiber Laser with Positive Dispersion Cavity

  • Chen, Xiaodong
    • Journal of the Optical Society of Korea
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    • v.19 no.2
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    • pp.130-135
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    • 2015
  • Based on the extended nonlinear Schr$\ddot{o}$dinger equation, the influences of the filter effect on pulse splitting in a passively mode-locked erbium-doped fiber laser with positive dispersion cavity are investigated theoretically. Numerical results show that, as the bandwidth of the spectral filter decreases, the nonlinear chirp appended to the pulse increases under the combined action of the filter effect of the super-Gaussian spectral filter and the self-phase modulation effect. On further decreasing the bandwidth, the wave breaking of the pulse takes place. In addition, by varying the pump power of the laser or the profile of the spectral filter, the influences of the filter effect on pulse splitting also change accordingly.

Micelle Formation of Surfactant Solution(3) -Self-Diffusion and 1H Relaxation for Mixed Micelle of Nonionic and Ionic Surfactants- (계면활성제 수용액에서 미셀형성(제3보) -비이온성과 이온성계면활성제의 혼합 미셀에 있어 자기확산 및 프로톤 이완-)

  • Choi, Seung-Ok;Kwack, Kwang-Soo;Park, Heung-Jo;Nam, Ki-Dae
    • Applied Chemistry for Engineering
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    • v.10 no.6
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    • pp.876-880
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    • 1999
  • The surfactant self-diffusion coefficients of mixed micellar solutions of ionic and nonionic surfactants have been measured by the NMR pulsed field gradient spin echo(FT-PGSE) method. In addition, the line widths of $^1H$ NMR signal have been monitored. The system investgated are $C_{12}EO_5/SDS/D_2O$, $C_{12}EO_5/DTAC/D_2O$, and $C_{12}EO_8/SDS/D_2O$. In the sample series, the molar ratios of $D_2O$ to surfactant(ionic+nonionic) were kept constant while the surfactant mixing ratio was varied. For the $C_{12}EO_5$ system, the surfactant self-diffusion coefficient indicates minimum when the surfactant mixing ratio is about 20% ionic surfactant. The observed decrease in self-diffusion coefficients as nonionic surfactant was replaced by ionic surfactant is interpreted to mainly be due to an increased micelle-micelle repulsion. The increase in self-diffusion coefficients occurring at higher fraction of ionic surfactant is shown to be due to a decrease in micelle size. For the $C_{12}EO_8$ system, the effect of the surfactant mixing ratio is much weaker which can be understood by considering the molecular geometry and large headgroup area. The proton NMR line widths correlate well with the self-diffusion coefficients and broadening of the alkyl chain methylene signals is found when the self-diffusion coefficients is low.

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Mixed rare earth $(Nd_{1/3}Eu_{1/3}Gd_{1/3})Ba_2Cu_3O_{7-d}$ thin films by PLD (PLD법에 의한 혼합된 희토류계$(Nd_{1/3}Eu_{1/3}Gd_{1/3})Ba_2Cu_3O_{7-x}$ 고온 초전도 박막)

  • Ko, Rock-Kil;Bae, Sung-Hwan;Jung, Myung-Jin;Jang, Se-Hoon;Song, Kyu-Jeong;Park, Chan;Sohn, Myung-Hwan;Kang, Suk-Ill;Oh, Sang-Soo;Ha, Dong-Woo;Ha, Hong-Soo;Kim, Ho-Sup;Kim, Young-Cheol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.05a
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    • pp.3-3
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    • 2009
  • In order to investigate the possibility of using mixed rare earth $(Nd_{1/3}Eu_{1/3}Gd_{1/3})Ba_2Cu_3O_{7-x}$ (NEG123) as the superconducting layer of the HTS coated conductor, the NEG123 thin film was deposited epitaxialy on LAO(100) single crystal and IBAD_YSZ metal templates by pulsed laser deposition. Systematic studies were carried out to investigate the influences of deposition parameters of PLD on the micro structure, texture and superconducting properties of NEG-123 coated conductor. Deposition at oxygen partial pressure of 600 mTorr was needed to routinely obtain high quality NEG123 films with $J_c$'s (77K) over 2 MA/$cm^2$ and Tc's over 90K (${\Delta}T{\sim}2\;K$). We verified from magnetization study that the NEG123 has an improved in-field Jc as the field increases at temperatures between 10 K and 77 K compared with Gd123. The $J_c$ (77K, self field) and the value of onset $T_c$ of NEG123 thin film on LAO substrate was $4.0MA/cm^2$ and 92K, respectively. This is the first report, to the best of our knowledge, of coated conductors with NEG123 film as the superconducting layer which have Ic and Jc over 40 A/cm-width and 1.6 MA/$cm^2$ at 77K, self field. This study shows the possibility of using NEG123 film as the superconducting layer of the HTS coated conductor which can be used in high magnetic field power electric devices.

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Atomic Layer Deposition: Overview and Applications (원자층증착 기술: 개요 및 응용분야)

  • Shin, Seokyoon;Ham, Giyul;Jeon, Heeyoung;Park, Jingyu;Jang, Woochool;Jeon, Hyeongtag
    • Korean Journal of Materials Research
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    • v.23 no.8
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    • pp.405-422
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    • 2013
  • Atomic layer deposition(ALD) is a promising deposition method and has been studied and used in many different areas, such as displays, semiconductors, batteries, and solar cells. This method, which is based on a self-limiting growth mechanism, facilitates precise control of film thickness at an atomic level and enables deposition on large and three dimensionally complex surfaces. For instance, ALD technology is very useful for 3D and high aspect ratio structures such as dynamic random access memory(DRAM) and other non-volatile memories(NVMs). In addition, a variety of materials can be deposited using ALD, oxides, nitrides, sulfides, metals, and so on. In conventional ALD, the source and reactant are pulsed into the reaction chamber alternately, one at a time, separated by purging or evacuation periods. Thermal ALD and metal organic ALD are also used, but these have their own advantages and disadvantages. Furthermore, plasma-enhanced ALD has come into the spotlight because it has more freedom in processing conditions; it uses highly reactive radicals and ions and for a wider range of material properties than the conventional thermal ALD, which uses $H_2O$ and $O_3$ as an oxygen reactant. However, the throughput is still a challenge for a current time divided ALD system. Therefore, a new concept of ALD, fast ALD or spatial ALD, which separate half-reactions spatially, has been extensively under development. In this paper, we reviewed these various kinds of ALD equipment, possible materials using ALD, and recent ALD research applications mainly focused on materials required in microelectronics.