• 대한기계학회논문집A
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• 제32권10호
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• pp.831-835
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• 2008

We present a continuous electrical cell lysis chip, using a DC bias voltage to generate the focused high electric field for cell lysis as well as the electroosmotic flow for cell transport. The previous cell lysis chips apply an AC voltage between micro-gap electrodes for cell lysis and use pumps or valves for cell transport. The present DC chip generates high electrical field by reducing the width of the channel between a DC electrode pair, while the previous AC chips reducing the gap between an AC electrode pair. The present chip performs continuous cell pumping without using additional flow source, while the previous chips need additional pumps or valves for the discontinuous cell loading and unloading in the lysis chambers. The experimental study features an orifice whose width and length is 20 times narrower and 175 times shorter than the width and length of a microchannel. With an operational voltage of 50 V, the present chip generates high electric field strength of 1.2 kV/cm at the orifice to disrupt cells with 100% lysis rate of Red Blood Cells and low electric field strength of 60 V/cm at the microchannel to generate an electroosmotic flow of $30{\mu}m/s{\pm}9{\mu}m/s$. In conclusion, the present chip is capable of continuous self-pumping cell lysis at a low voltage; thus, it is suitable for a sample pretreatment component of a micro total analysis system or lab-on-a-chip.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1364-1366
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• 1997

Planar type magnetized inductively coupled plasma etcher has been built. The density and temperature of Ar plasma are measured as a function of rf power, external magnetic field, and pressure. The oxide etch rate and selectivity to polysilicon are measured as the above mentioned conditions and self-bias voltage.

• 한국표면공학회지
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• 제43권2호
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• pp.80-85
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• 2010

The surfaces of WC-Co and SCM415 were etched to form a micro size protrusion for oil based ultra low friction applications using an ion bombardment process in a filtered vacuum arc plasma. WC-Co species showed that a self-patterned surface was available by the ion bombarding process due to the difference of sputtering yield of WC and Co. And the increasing rate of roughness was 0.6 nm/min at -600 V substrate bias voltage. The increasing rate of roughness of SCM415 species was 1.5 nm/min at -800 V, but the selfpatterning effect as shown in WC-Co was not appeared. When the SCM415 species pretreated by electrical discharge machining is etched, the increasing rate of roughness increased from 1.5 nm/min to 40 nm/min at -800 V substrate bias voltage and the uniform surface treatment was available.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1475-1476
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• 2011

플라즈마 중합 기법에 의해 제작된 고분자 (plasma polymerized polymer) 박막은 단량체(monomer)의 고유의 특성을 유지하며 고분자 박막이 형성됨을 확인하고, 기판 바이어스에 의해 시간에 따른 증착 두께는 선형적으로 증가함을 확인하였다. 자체 제작된 플라즈마 중합 시스템에서 self-bias voltage를 최소화하여 플라즈마 고분자의 증착효율 및 두께 조절이 가능함을 확인하였다. 플라즈마 합성을 이용해 고분자 박막을 제조하고, MIM 소자를 제작하여 통상적인 고분자 합성기법으로 제조된 고분자 대비 높은 유전상수 값이 확인되었다. 결과적으로 유기박막 트랜지스터 및 유기 메모리 등 플렉서블 유기전자소자용 절연/유전체 박막으로의 응용이 기대된다.

• 전자공학회논문지D
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• 제35D권5호
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• pp.1-10
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• 1998

A GaAs MMIC composed of VCO (voltage controlled oscillator) and mixer for PCS receiver has been developed using 1.mu.m ion implanted GaAs MESFET process. The VCO consists of a colpitts-type oscillator with a dielectric resonator and the circuit configuration of the mixer is a dual-gate type with an asymmetric combination of LO and RF FETs for the improvement of intermodulation characteristics. The common-source self-biasing is used in all circuits including a buffer amplifier and mixer, achieving a single power supply (3V) operation. The total power dissipation is 78mW. The VCO chip shows a phase noise of-99 dBc/Hz at 100KHz offset. The combined VCO/mixer chip shows a flat conversion gain of 2dB, the frequency-tuning factor of 80MHz/volts in the varacter bias ranging from 0.5V to 0.5V , and output IP3 of dBm at varactor bias of 0V. The fabricated chip size is 2.5mm X 1.4mm.

• Journal of Magnetics
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• 제8권4호
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• pp.160-163
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• 2003

In magnetic flux measurement, output voltage drift of electronic integrator is an essential problem. In this work, we have developed a new kind of Miller type integrator using a sample and hold amplifier. Input bias current was measured and this value was hold in the sample and hold amplifier, after that input bias current of Miller integrator was compensated automatically using the value which holds in the sample and hold amplifier. Developed flux-meter shows the drift of flux-meter are smaller than 10$^{-5}$ Wb/min in full scale of 10$^{-2}$, and we could also measure multi-channel magnetic flux simultaneously.

• 한국자기학회지
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• 제5권4호
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• pp.299-303
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• 1995

In order to improve the read-out signal waveform, a shielded magnetoresistive (SMR) head has been designed and studied by applying the transmission-line model. The bias and signal field distribution, the voltage output, the harmonic output signal and resistance value of MR element are simulated as functions of bias current and recording displacement. The results show that the SMR head has good linear character with respect to the medium recording signal in high recording frequency of about 2.5 MHz. The amplitude and waveform of reroduction signal have been obviously improved. The saturation effect on the symmetry and amplitude of reproducing output have also been analyzed.

• 한국정보통신학회논문지
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• 제5권1호
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• pp.166-172
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• 2001

본 논문에서는 INMARSAT-B형 위성통신용 광대역 수신단을 저잡음증폭기와 고이득증폭기로 구성하였다. 저잡음증폭기의 입력단 정합회로는 저항 결합회로의 형태로 설계하였으며, 전원회로는 저잡음 특성이 우수한 자기 바이어스 회로를 사용하였다. 수신단 이득을 향상시키기 위해서 고이득증폭기는 양단 정합된 단일 증폭기 형태로 제작하였으며, 바이어스 안정화 저항을 사용하여 회로의 전압강하 및 전력손실을 가능한 줄이고 온도 안정성을 고려하여 능동 바이어스 회로를 사용하였으며, 스퓨리어스를 감쇠시키기 위해서 저잡음증폭기와 고이득증폭기사이에 대역통과 필터를 사용하였다. 1525~1575 MHz 대역에서 60 dB 이상의 이득, 1.8:1 이하의 입.출력 정재파비를 나타내었으며, 특히 1537.5 MHz에서 입력신호의 크기가 -126.7 dBm일 때1.02 kHz 떨어진 점에서의 C/N비가 45.23 dB/hz의 측정결과를 나타냄으로써 설계시 목표로 했던 사양을 모두 만족시켰다.

• 한국전기전자재료학회논문지
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• 제14권8호
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• pp.622-628
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• 2001

We developed 1- and 2-dimensional fluid model for the analysis of a capacitively coupled Ar RF(Radio Frequency) glow discharge. This discharge is in pure Ar gas at the pressure 100[mTorr], frequency 13.56[MHz] and voltage amplitude 120[V}. This model is based on the equations of continuity and electron energy conservation coupled with Poison equation. 2-dimensional model is simulated on the condition of GEC(Gaseous Electronic Conference cell). The geometry of the discharge chamber and the electrodes used in the model is cylindrically simmetric; tow cylinders for the electrodes are surrounded by the grounded chamber. It is shown that 1-dimensional model is very useful on the understanding of RF glow discharge property and of the movement of charged particles. 2-dimensional model predicts off-axis maximum structure as in the experiments and has the results in qualitatively and quantitatively good agreement with the experiments. Effects of dc self-bias voltage, guard ring and reactor geometry is discussed.

• Bulletin of the Korean Chemical Society
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• 제33권12호
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• pp.4155-4160
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• 2012

We characterized the physisorption of p-iodo-phenyl octadecyl ether molecules (I-POE) onto superlattice regions of graphite surfaces using scanning tunneling microscopy (STM). The formation of self-organized I-POE monolayers does not affect the overall structures of moir$\acute{e}$ patterns and their modulation periods. However, the packing density of the I-POE monolayer and the orientations of lamella structures were sensitive to the underlying superlattice structure. Depending on the bias voltage, the STM images selectively showed moir$\acute{e}$ pattern, I-POE layer, or both. Reflecting the local density of states at a certain energy level, the STM images thereby revealed the relative energy level scale of the superlattice with respect to the molecular orbitals of I-POE.