• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.25 no.1
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• pp.36-41
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• 2016

A method is proposed for the improvement of deposition reproducibility in the selective electrodeposition process using laser masking and DC voltage. Selective electrodeposition using laser masking and DC voltage can achieve a deposited layer with micro patterns. However, selective electrodeposition using laser masking and DC voltage have a critical problem: the lack of reproducibility in selective deposition. The reproducibility of selective electrodeposition can be improved by a new process that consists of laser masking, two-step electro-deposition, laser scribing, and ultrasonic cleaning. The experiments in this study show that the reproducibility of selective deposition can be successfully improved by the combination of two-step electrodeposition and laser scribing.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.369-369
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• 2012

The present work deals with selective deposition of copper on fluoropolymers patterned silicon (111) surfaces. The pattern of fluoropolymer was fabricated by nanoimprint lithography (NIL) and plasma reactive ion etching (RIE) was used to remove the residuals layers. Copper was electrochemically deposited in bare Si regions which were not covered with fluoropolymers. The patterns of fluoropolymers and copper have been investigated by scanning electron microscopy (SEM). In this work, we used two deposition methods. One is galvanic displacement method and another is electrodeposition. Selective deposition works in both cases and it shows applicability to other materials. By optimization of the deposition conditions can be achieved therefore this process represents a simple approach for a direct high resolution patterning of silicon surfaces.

• Bulletin of the Korean Chemical Society
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• v.27 no.10
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• pp.1633-1637
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• 2006

We demonstrate a selective vapor-phase deposition of conductive poly(3,4-ethylenedioxythiophene) (PEDOT) thin films on patterned $FeCl_3$. The PEDOT thin films were grown on various substrates by using the vapor-phase polymerization of ethylenedioxythiophene (EDOT) with $FeCl_3$ catalytic layers at 325 K. The selective deposition of the PEDOT thin films using vapor-phase polymerization was accomplished with patterned $FeCl_3$ layers as templates. Microcontact printing was done to prepare patterned $FeCl_3$ on polyethyleneterephthalate (PET) substrates. The selective vapor-phase deposition is based on the fact that the PEDOT thin films are selectively deposited only on the regions exposing $FeCl_3$ of the PET substrates, because the EDOT monomer can be polymerized only in the presence of oxidants, such as $FeCl_3$, Fe($CIO_4$), and iron(II) salts of organic acids/inorganic acids containing organic radicals.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.39 no.7
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• pp.692-701
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• 1990

New selective tungsyen deposition deposition on silicon process is described which makes use of a previously unreported, alternating cyclic,

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.108-112
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• 1995

Copper and aluminum selective deposition using (hfac)Cu(VTMS) and DMEAA precursors were performed in a warm-wall low pressure chemical vapour deposition reactor. The films of Cu and AI deposited on Corning 7059 glass and quartz with pattern of Cr seed metal. Selective deposition can be achieved at a pressure range of from 10-1 to 10 torr and substrate temperature range of 150-25$0^{\circ}C$. Selective deposition of Cu and AI by CVD is one of candidate for gate material formation fo larger area and high resolution plat panel displays.

• Korean Journal of Materials Research
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• v.16 no.10
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• pp.619-623
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• 2006

Selective vapor deposition of conductive poly(3,4-ethylenedioxythiophene) (PEDOT), thin films has been carried out on self assembled monolayers patterned oxide substrate. Since the 3,4-ethylenedioxythiophene(EDOT) monomer can be polymerized only in the presence of oxidant such as $FeCl_3$, the PEDOT thin film is selectively deposited on patterned $FeCl_3$, which only adsorbs on the partly removed SAMs region due to the inability of $FeCl_3$ to adsorb on SAMs. Therefore, the partly removed SAMs can act as an adsorption layer for the $FeCl_3$ and also as a glue layer for the deposition of PEDOT, resulting in the significantly increased adhesion of PEDOT to $SiO_2$ substrate. The use of UV lithography and Cr patterned quartz mask provided the formation of SAMs patterns on oxide substrates, which allowed for the selective deposition of conductive PEDOT thin films.$^{oo}The$ new process was successfully developed for the selective deposition of PEDOT thin films on SAMs patterned oxide substrate, providing a new way for the patterning of vapor phase deposition of PEDOT thin films with accurate alignment and addressing the inherent adhesion issues between PEDOT and dielectrics.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.26 no.1
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• pp.44-49
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• 2017

Titanium has been used in various fields due to its good corrosion and erosion resistance, and superior mechanical properties. The process for selective electro-deposition on a titanium surface using laser beam is proposed in this paper. The process consists of laser irradiation, electro-deposition, and ultrasonic cleaning. Laser irradiation can change the surface morphology of titanium. Through laser irradiation, the surface cleaning effect and a rough surface can be achieved. The surface roughness of titanium was measured according to the laser beam conditions. The characteristics of selective electro-deposition on titanium surface according to surface roughness are investigated by various analytical methods such as SEM, and EDS.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.69-76
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• 1993

The statistical methodology using RSM (response surface method) was used too ptimize the deposition conditions of selective CVD tungsten process for improving the deposition rate and the adhesion property. Temperature, flow rate of SiH$_4$ and WF$_6$ and H$_2$ and Ar carrier gases were chosen for the deposition variables and process characteristics due to carrier gas were intensively investigated. It was observed that temperature was the main factor influencingthe deposition rate in the case of H$_2$ carrier gas while the reactant ratio, $SiH_{4}/WF_{6}$, had the principal effect on the deposition rate in the case of Ar carrier gas. The increased deposition rate and the good adhesion to Si were obtained under Ar carrier gas compared to H$_2$ carrier gas. The optimum conditions for deposition rate and antipeeling property were found to be the temperature range of 300~32$0^{\circ}C$ and the reactant ratio, $SiH_{4}/WF_{6}$, of 0.5~0.6.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.1
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• pp.75-80
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• 2015

This paper proposes a selective electrodeposition process that uses laser masking and a DC voltage. Selective electrodeposition using laser masking and a DC voltage is more efficient than that using laser masking and a pulse voltage. In other words, electrodeposition with a DC voltage allows for precise selective deposition without the limitation of the deposition region. Also, a selective electrodeposition method that uses laser masking and DC voltage can reduce the electrodeposition time. The characteristics of a copper layer deposited by laser masking and DC voltage were examined under various conditions. A selective copper layer with various micro patterns of $2{\mu}m$ thickness was successfully fabricated.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.363-368
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• 2002

we proposed the use of $Si_2H_ 6/H_2$ chemistry for selective silicon epitaxy growth by low-pressure chemical vapor deposition(LPCVD) in the temperature range $600~710^{\circ}C$ under an ultraclean environment. As a result of ultraclean processing, an incubation period of Si deposition only on $SiO_2$ was found, and low temperature epitaxy selective deposition on Si was achieved without addition of HCI. Total gas flow rate and deposition pressure were 16.6sccm and 3.5mtorr, respectively. In this condition, we selectively obtained high-quality epitaxial Si layers of the 350~1050$\AA$ thickness. In older to extend the selectivity, we kept high pressure $H_2$ environment without $Si_2H_6$ gas for few minutes after first incubation period and then we conformed the existence of second incubation period.