• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.32-32
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• 2005

• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.273-281
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• 2016

This review examines computational simulations of thermoelectric properties, such as electrical conductivity, Seebeck coefficient, and thermal conductivity. With increasing computing power and the development of several efficient simulation codes for electronic structure and transport properties calculations, we can evaluate all the thermoelectric properties within the first-principles calculations with the relaxation time approximation. This review presents the basic principles of electrical and thermal transport equations and how they evaluate properties from the first-principles calculations. As a model case, this review presents results on $Bi_2Te_3$ and Si. Even though there is still an unsolved parameter such as the relaxation time, the effectiveness of the computational simulations on the transport properties will provide much help to experimental scientist researching novel thermoelectric materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.909-912
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• 2001

Lanthanide orthochromite materials have been widely studied as refractory conducting ceramics because of their electrical conductivity, oxidation resistance and high melting points. In this paper theoretical and experimental analysis about electric conductivity of the SHS prepared ceramics was carried out. The usefulness of the Seebeck-coefficient measurements as a function of P(O$_2$) is emphasized. Electronic conduction was found to be n-type in the lower P(O$_2$) range, and p-type in the higher P(O$_2$) range. The carrier concentrations were calculated as a function of P(O$_2$) and defect structure.

• Korean Journal of Crystallography
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• v.14 no.2
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• pp.62-66
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• 2003

The preparation of n-type thermoelectric material of Bi₂ Te/sub 2.55/Se/sub 0.45/ doped with CuBr₂ was carried out using a vertical gradient freezing method. With this method, unidirectional solidified Bi₂Te/sub 2.55/Se/sub 0.45/ has been obtained. XRD analysis demonstrated that Bi₂/sub 2.55/Se/sub 0.45/ 5 ingot has grown with prefer orientation of (0 1 5) face. Seebeck coefficient and electrical conductivity were measured as functions of temperature in the range of 373 K to 523 K on the sample which prepared via VGF method.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.16 no.1
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• pp.62-69
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• 2004

Thermoelectric module is a device that can produce cooling in a direct manner using the electrical energy. The purpose of this study is to investigate the performance of thermoelectric module and cooling system equipped with the thermoelectric module. The performance of a thermoelectric module is estimated using two methods; theoretical analysis based on one-dimensional energy equations and experimental tests using heat source, heat sink and brass conduction extenders. For the thermoelectric cooling system, the temperatures in the chamber are recorded and then compared with those of lumped system analysis. The results show that the cooling capacity and COP of the thermoelectric module increases as the temperature difference between hot and cold surface decreases, and there is particular current at which cooling capacity reaches its maximum value. The experimental results for the thermoelectric cooling system are similar to those of lumped system analysis.

• Advances in materials Research
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• v.9 no.3
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• pp.171-187
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• 2020

The microstructural evolution of different compositions of Mg-Sn alloys (30%Sn-70%Mg, 40%Sn-60%Mg and 50%Sn-50%Mg) is studied at first to understand the changes observed with change in tin content and deformation conditions. The Mg₂Sn phase increases with increase in tin content and a significant substructure development is found in 50%Sn-50%Mg alloy. The above observation led to further deformation studies on Mg₂Sn based thermoelectric materials with higher tin percentage. The microstructure in terms of Electron backscatter diffraction (EBSD)measurements is studied in detail followed by the determination of thermoelectric properties i.e., Seebeck coefficient and electrical conductivity for both as cast and extruded Mg_(2+x)Sn-Ag alloys. The electrical conductivity of the extruded Mg_(2+x)Sn-.3wt%Ag {x =1} alloy was found to be more than its as cast counterpart while the Seebeck coefficient values remained almost the same.

• Journal of the Korean Ceramic Society
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• v.33 no.1
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• pp.74-82
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• 1996

Fe-Si based powders prepare by melting the metals in the composition of FeSi2,.Fe0.95Mn0.05Si2 and Fe0.95Co0.05Si0.2 were used as the starting materials together with a commercial FeSi2 powder to study the effect of oxidation on their thermoelectric properties. The powders were heated at 650~80$0^{\circ}C$ in dired air before forming and sintering at 1190 and 120$0^{\circ}C$ in Ar+7%H2. The microstructure and phases of the annealed specimens were observed using the optical microscopty SEM, EDS and XRD. The thermoelectric properties of the specimens were also measured. The temperature at which Seebe다 coefficient showed the maximum value increased with the degree of oxidation. Electrical conductivity showed a tendency to decrease in the oxidized samples regardless of their compositions. Seebeck coefficient of the specimen showed almost the same value even after oxidation which may be explained by the formation of the discontinuous second phases from impurities in the oxidized specimens.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.5
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• pp.7-10
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• 1984

Generally, free carrier densities of single crystal semiconductors are indifferent to methods of measurement. Free carrier densities of CdSe thin films, however, were measured invarious values with different methods In this paper, C-V method, Seebeck effect and a.c. Hall effect were used to measure carries densities of CdSe thin films. Carrier densities of CdSe thin films were in the range of 10 - 10 carriers/㎤. And causes of different results were discussed.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.8
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• pp.1-6
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• 2015

In this paper, we propose the LED(Light-Emitting-Diode) emergency lighting in a tunnel by using the thermoelectric devices. To achieve high generated power, thermoelectric device should be have high Seebeck coefficient and small contact area. Also, we reveal that a moderate heatsink required for high generated power. From the waste heat of LED tunnel lighting module (25W), the generated power was 0.062W by thermoelectric device, and it could illuminate for 1hour after charge the battery of emergency lighting during about 101hours.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.10a
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• pp.445-446
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• 2009