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Unidirectional Solidification of $Bi_2Te_{2.55}Se_{0.45}$ using a VGF Method  

김영희 (세라믹ㆍ건재부, 요업기술원)
김기수 (벤처전문대학원, 호서대학교)
김수룡 (세라믹ㆍ건재부, 요업기술원)
정상진 (세라믹세라믹ㆍ건재부, 요업기술원)
이윤주 (세라믹세라믹ㆍ건재부, 요업기술원)
박동선 ((주)이플러스티)
Publication Information
Korean Journal of Crystallography / v.14, no.2, 2003 , pp. 62-66 More about this Journal
Abstract
The preparation of n-type thermoelectric material of Bi₂ Te/sub 2.55/Se/sub 0.45/ doped with CuBr₂ was carried out using a vertical gradient freezing method. With this method, unidirectional solidified Bi₂Te/sub 2.55/Se/sub 0.45/ has been obtained. XRD analysis demonstrated that Bi₂/sub 2.55/Se/sub 0.45/ 5 ingot has grown with prefer orientation of (0 1 5) face. Seebeck coefficient and electrical conductivity were measured as functions of temperature in the range of 373 K to 523 K on the sample which prepared via VGF method.
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