• Journal of the Korea Computer Graphics Society
• /
• v.18 no.1
• /
• pp.11-21
• /
• 2012

Point-based rendering has gained much attention as an alternative to polygon-based rendering because of its simplicity and flexibility. However, current point-based rendering techniques do not provide a sufficient rendering quality for translucent materials such as human skin. In this paper, we propose a point-based rendering framework with subsurface scattering of light, which is important to create the soft and semi-translucent appearance of human skin. To accurately simulate subsurface scattering in multi-layer materials, we present splat-based diffusion to apply a linear combination of several Gaussian basis functions to each splat in object space. Compared to existing point-based approaches, our method offers a significantly improved visual quality in rendering human faces.

• Journal of the Korea Institute of Military Science and Technology
• /
• v.11 no.3
• /
• pp.169-175
• /
• 2008

A fine carbon fibers dispersion model is implemented to calculate the scattering range and ground level concentration of carbon fibers emitted at certain altitudes of atmospheric boundary layer. This carbon fibers dispersion model was composed by coupling a commonly used atmospheric dispersion model and an atmospheric boundary layer model. The atmospheric boundary layer model, applying the Monin-Obukov Similarity Rule obtained from measurement input data at ground level, was used to create the atmospheric boundary layer structure. In the atmospheric dispersion model, the Lagrangian Particle Model and the Markov Process were applied to calculate the trajectory of scattered carbon fibers relative to gravity and aerodynamic force, as well as carbon fibers specification.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.132-132
• /
• 2011

The sheet resistance (Rs) of undoped GaN films on AlN/c-plane sapphire substrate was investigated in which the AlN films were grown by R. F. magetron sputtering method. The Rs was strongly dependent on the AlN layer thickness and semi-insulating behavior was observed. To clarify the effect of crystalline property on Rs, the crystal structure of the GaN films has been studied using x-ray scattering and transmission electron microscopy. A compressive strain was introduced by the presence of AlN nucleation layer (NL) and was gradually relaxed as increasing AlN NL thickness. This relaxation produced more threading dislocations (TD) of edge-type. Moreover, the surface morphology of the GaN film was changed at thicker AlN layer condition, which was originated by the crossover from planar to island grains of AlN. Thus, rough surface might produce more dislocations. The edge and mixed dislocations propagating from the interface between the GaN film and the AlN buffer layer affected the electric resistance of GaN film.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.27 no.7
• /
• pp.660-663
• /
• 2016

This paper presents the effect of vegetation layer and radar parameters on soil moisture measurement using the vegetation layer scattering model and surface scattering model. The database of backscattering coefficients for various vegetation layer densities, incidence angles, frequencies, and polarizations is generated using $1^{st}$-order RTM(Radiative Transfer Model). Then, surface soil moisture contents were estimated from the backscattering coefficients in the database using the WCM(Water Cloud Model) and Oh model. The retrieved soil moisture contents were compared with the soil moisture contents in the input parameters of the RTM to estimate the retrieval errors. The effects of vegetation layer and radar parameters on soil moisture measurement are analyzed using the retrieval errors.

• Proceedings of the KIEE Conference
• /
• 1994.07b
• /
• pp.1277-1279
• /
• 1994

In the structure of ZnO/nip-SiC: H/metal substrate amorphous silicon (a-Si:H) solar cells, the effects of inserting a rear textured ZnO in the p-SiC:H/metal interface and a graded bandgap buffer layer in the i/p-SiC:H have been analysed by computer simulation. The incident light was taken to have an intensity of $100mW/cm^2$(AM-1). The thickness of the a-Si:H n, ${\delta}$-doped a-SiC:H p, and buffer layers was assumed to be $200{\AA},\;66{\AA}$, and $80{\AA}$, respectively. The scattering coefficients of the front and back ZnO were taken to be 0.2 and 0.7, respectively. Inserting the rear buffer layer significantly increases the open circuit voltage($V_{oc}$) due to reduction of the i/p interface recombination rate. The use of textured ZnO markedly improves collection efficiency in the long wavelengths( above ${\sim}550nm$ ) by back scattering and light confinement effects, resulting in dramatic enhancement of the short circuit current density($J_{sc}$). By using the rear buffer and textured ZnO, the i-layer thickness of the ceil for obtaining the maximum efficiency becomes thinner(${\sim}2500{\AA}$). From these results, it is concluded that the use of textured ZnO and buffer layer at the backside of the ceil is very effective for enhancing the conversion efficiency and reducing the degradation of a-Si:H pin-type solar cells.

• Proceedings of the KAIS Fall Conference
• /
• 2003.06a
• /
• pp.239-242
• /
• 2003

Scale down으로 인해 부족해진 overlay margin을 통해 충분히 확보해주고, 이와 동시에 attPSM(attenuated phase shift)의 사용으로 발생하는 side-lobe 현상을 억제하기 위한 방법으로 rule-based OPC(optical proximity correction)룰 사용하여 side-lobe만을 효과적으로 추출한 후, 그 자리에 scattering bar를 삽입하였다. 그리고 ORC(optical rule checking)를 통해 original layout과 aerial image의 EPEs(edge placement errors)를 검사하여 검증에 걸리는 시간을 감소시켰다.

• Current Optics and Photonics
• /
• v.3 no.1
• /
• pp.78-85
• /
• 2019

The remote phosphor structure has been proven to bear greater luminous efficiency than both the conformal phosphor and in-cup phosphor structures; however, controlling its color quality is much more challenging. To solve this dilemma, various researchers have proposed dual-layer phosphor and triple-layer phosphor configuration as techniques to enhance the display brightness of white LEDs (WLEDs). Likewise, this study picked one of these configurations to utilize in multichip WLEDs with five distinct color temperatures in the range from 5600 to 8500 K, for the purpose of improving the optical properties of WLEDs, such as color rendering index (CRI), color quality scale (CQS), luminous efficacy (LE), and chromatic homogeneity. According to the results of this research, the triple-layer phosphor configuration has superior performance compared to other configurations in terms of CRI, CQS, and LE, and yields higher chromatic stability for WLEDs.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.76-79
• /
• 2007

Optical compensation films are widely used to enlarge viewing angle characteristics for LCDs. A new surface film with an inner light scattering layer was newly developed to improve gray scale inversion. This paper describes technologies regarding these films that enhance the viewing angle characteristics for LCDs.

• Korean Journal of Optics and Photonics
• /
• v.3 no.1
• /
• pp.11-15
• /
• 1992

In this work we analyze effects on the spectra of an integrated-mirror etalon by the absorption in a spacer layer, scattering loss at the interfaces between layers, and the focusing of incident beam.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.10
• /
• pp.1-7
• /
• 2004

In order to enhance the electron mobility in SOI n-MOSFET, we fabricated fully depletion(FD) n-MOSFET on the strained Si/relaxed SiGa/SiO$_2$/Si structure(strained Si/SGOI) formed by inserting SiGe layer between a buried oxide(BOX) layer and a top silicon layer. The summated thickness of the strained Si and relaxed SiGe was fixed by 12.8 nm and then the dependency of electron mobility on strained Si thickness was investigated. The electron mobility in the FD n-MOSFET fabricated on the strained Si/SGOI enhanced about 30-80% compared to the FD n-MOSFET fabricated on conventional SOI. However, the electron mobility decreased with the strained Si thickness although the inter-valley phonon scattering was reduced via the enhancement of the Ge mole fraction. This result is attributed to the increment of intra-valley phonon scattering in the n-channel 2-fold valley via the further electron confinement as the strained Si thickness was reduced.