• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.28 no.1
• /
• pp.85-91
• /
• 2004

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by chemical and mechanical polishing process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of sapphire crystalline wafer at surfaces has a full width at half maximum of 89 arcsec. The surfaces of sapphire wafer were mechanically affected by residual stress during the polishing process. The wave pattern of optical interference of sapphire wafer implies higher abrasion rate in the edge of the wafer than its center from the Newton's ring.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.10 no.5
• /
• pp.350-355
• /
• 2000

The fabrication of sapphire wafer in C plane has been developed by horizontal Bridgeman method and GaN based semiconductor epitaxial growth has been carried out in metal organic chemical vapour deposition. The single crystalline ingot of sapphire has been utilized for 2 inch sapphire wafers and wafer slicing and lapping machines were designed. These several steps of lapping processes provided the mirror-like surface of sapphire wafer. The measurements of the surface flatness and the roughness were carried out by the atomic force microscope. The GaN thin film growth on the developed wafer was confirmed the wafer quality and applicability to blue light emitting devices.

• Journal of the Korean Society for Precision Engineering
• /
• v.22 no.2
• /
• pp.46-52
• /
• 2005

The sapphire wafer was polished by the implementation of the surface machining technology based on nano-tribology, The removal process has been performed by grinding, lapping and chemical-mechanical polishing. For the chemical mechanical polishing process, the chemical reaction between the slurry and sapphire wafer was investigated in terms of the change of Zeta-potential between two materials. The Zeta-potential was -4.98 mV without the slurry in deionized water and was -37.05 mV for the slurry solution. By including the slurry into the deionized water the Zeta-potential -29.73 mV, indicating that the surface atoms of sapphire become more repulsive to be easy to separate. The average roughness of the polished surface of sapphire wafer was ranged to 1∼4$\AA$.

• Journal of the Korean Society for Precision Engineering
• /
• v.21 no.2
• /
• pp.218-223
• /
• 2004

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by Micro-lapping process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of crystalline sapphire wafer at surface has a full width at half maximum of 250 arcsec. This value at the surface sapphire wafer surfaces indicated 0.12${mu}m$ sizes. Surfaces of sapphire wafers were mechanically affected by residual stress and surface default. As a result, the value of surface roughness of sapphire wafers measured by AFM(Atom Force Microscope) was 2.1nm.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2003.06a
• /
• pp.82-85
• /
• 2003

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by Micro-lapping process. The sapphire crystalline wafers were characterized by DCXD(Double Crystal X-ray Diffraction). The sample quality of crystalline sapphire wafer at surface has a FWHM(Full Width at Half Maximum) of 250 arcsec. This value at the sapphire wafer surfaces indicated 0.12${\mu}{\textrm}{m}$ sizes. Surfaces of sapphire wafers were mechanically affected by residual stress and surface default. Also Surfaces roughness of sapphire wafers were measured 2.1 by AFM(Atom Force Microscope).

• Journal of the Korean Society for Heat Treatment
• /
• v.30 no.5
• /
• pp.222-226
• /
• 2017

Recently sapphire wafer has expected as smart phone cover material, however, brittle nature of sapphire needed edge grinding processes to prevent early initiation of cracks. Electro-deposited multi-layered groove tools with $35{\mu}m$ diamond particles were studied for sapphire wafer grinding. Solid particle flow behaviors in agitated electrolyte was studied using PIV(Particle Image Velocimetry), and uniform particle distribution in Ni bond were obtained when agitating impeller was located lower part of electrolyte. Hardness values of $400{\pm}50Hv$ were maintained for retention of diamond particles in electro-deposited bond layer. Sapphire wafer edge grinding test was carried out and multi-layered $160{\mu}m$ thick diamond tool showed much greater grinding capabilities up to 2000 sapphire wafers than single-layered $50{\mu}m$ thick diamond electro-deposited tools of 420 wafers. The reason why 3 times thicker multi-layered tools than single-layered tools showed 5 times longer tool lives in grinding processes was attributed to self-dressed new diamond particles in multi-layered tools, and multi-layered diamond tools could be promising for sapphire grinding.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.341-344
• /
• 2006

LED chips are produced by cutting the sapphire on which GaN is evaporated. To cut the sapphire wafer into each LED chip, at first the wafer is scribed by diamond tool. To get the sharp groove shape for the nice cutting plane it is important the diamond tool shape, load, etc when the wafer is scribed. Here we tried to simulate the scribing process and get the scribing condition to reduce the wear rate of diamond tool for the sharp groove shape.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05b
• /
• pp.31-34
• /
• 2003

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by chemical and mechanical polishing(CMP) process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of sapphire crystalline wafer at surfaces has a full width at half maximum 89 arcses. The surfaces of sapphire wafers were mechanically affected by residual stress and surface default. Sapphire wafers's waveness has higher abrasion rate in the edge of the wafer than its center due to Newton's Ring interference.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.29 no.4 s.235
• /
• pp.632-638
• /
• 2005

The surface lapping process on sapphire wafer was carried out for the epitaxial process of thin film growth of GaN semiconducting material. The planarization of the wafers was investigated by the introduction of the dummy wafers. The diamond lapping process causes the surface deformation of dislocation and micro-cracks. The material deformation due to the mechanical stress was analyzed by the X-ray diffraction and the Vickers indentation. The fracture toughness was increased with the increased annealing temperature indicating the recrystallization at the surface of the sapphire wafer The sudden increase at the temperature of $1200^{\circ}C$ was correlated with the surface phase transition of sapphire from a $-A1_{2}O_{3}\;to\;{\beta}-A1_{2}O_{3}$.

• Proceedings of the KSME Conference
• /
• 2003.11a
• /
• pp.1816-1821
• /
• 2003

The sapphire wafer for blue light emitting device was manufactured by the implementation of the chemical and mechanical polishing process. The surface polishing of crystalline sapphire wafer was characterized by zeta potential measurement. The reduction process with the alkali slurry provides the surface chemical reaction with sapphire atoms. The poly-urethane pad also provides the frictional force to take out the chemically-reacted surface layers. The surface roughness was measured by the atomic force microscope and the crystalline quality was characterized by the double crystal X -ray diffraction analysis.