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http://dx.doi.org/10.3795/KSME-A.2004.28.1.085

Chemo-Mechanical Polishing Process of Sapphire Wafers for GaN Semiconductor Thin Film Growth  

신귀수 (전북대학교 기계공학부)
황성원 (전북대학교 기계공학부)
서남섭 (전북대학교 기계공학부)
김근주 (전북대학교 기계공학부)
Publication Information
Transactions of the Korean Society of Mechanical Engineers A / v.28, no.1, 2004 , pp. 85-91 More about this Journal
Abstract
The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by chemical and mechanical polishing process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of sapphire crystalline wafer at surfaces has a full width at half maximum of 89 arcsec. The surfaces of sapphire wafer were mechanically affected by residual stress during the polishing process. The wave pattern of optical interference of sapphire wafer implies higher abrasion rate in the edge of the wafer than its center from the Newton's ring.
Keywords
Sapphire Wafer; CMP Process; DCXD; Surface Roughness;
Citations & Related Records
Times Cited By KSCI : 5  (Citation Analysis)
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