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A Study on the Zeta-potential of CMP processed Sapphire Wafers  

Hwang Sung Won (전북지방 중소기업청)
Shin Gwisu (전북전략산업기획단)
Kim Keunjoo (전북대학교 기계공학과, 공업기술연구센터)
Publication Information
Journal of the Korean Society for Precision Engineering / v.22, no.2, 2005 , pp. 46-52 More about this Journal
Abstract
The sapphire wafer was polished by the implementation of the surface machining technology based on nano-tribology, The removal process has been performed by grinding, lapping and chemical-mechanical polishing. For the chemical mechanical polishing process, the chemical reaction between the slurry and sapphire wafer was investigated in terms of the change of Zeta-potential between two materials. The Zeta-potential was -4.98 mV without the slurry in deionized water and was -37.05 mV for the slurry solution. By including the slurry into the deionized water the Zeta-potential -29.73 mV, indicating that the surface atoms of sapphire become more repulsive to be easy to separate. The average roughness of the polished surface of sapphire wafer was ranged to 1∼4$\AA$.
Keywords
Blue-LED sapphire wafer; Full width at half maximum; CMP; Zeta-potential; Slurry;
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Times Cited By KSCI : 7  (Citation Analysis)
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