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http://dx.doi.org/10.3795/KSME-A.2005.29.4.632

Surface Lapping Process and Vickers Indentation of Sapphire Wafer for GaN Epitaxy  

Shin Gwisu (전북전략산업기획단)
Hwang Sungwon (전북지방 중소기업청)
Kim Keunjoo (전북대학교 기계공학과)
Publication Information
Transactions of the Korean Society of Mechanical Engineers A / v.29, no.4, 2005 , pp. 632-638 More about this Journal
Abstract
The surface lapping process on sapphire wafer was carried out for the epitaxial process of thin film growth of GaN semiconducting material. The planarization of the wafers was investigated by the introduction of the dummy wafers. The diamond lapping process causes the surface deformation of dislocation and micro-cracks. The material deformation due to the mechanical stress was analyzed by the X-ray diffraction and the Vickers indentation. The fracture toughness was increased with the increased annealing temperature indicating the recrystallization at the surface of the sapphire wafer The sudden increase at the temperature of $1200^{\circ}C$ was correlated with the surface phase transition of sapphire from a $-A1_{2}O_{3}\;to\;{\beta}-A1_{2}O_{3}$.
Keywords
Blue-LED Sapphire Wafer; Thermal Annealing; Indentation; Recrystallization; FWHM;
Citations & Related Records
Times Cited By KSCI : 7  (Citation Analysis)
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