• Fisheries and Aquatic Sciences
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• v.17 no.2
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• pp.223-227
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• 2014

The present study examined whether light emitted by long-afterglow phosphorescent pigments (LumiNova) would stimulate gonadal development in fish during the nonbreeding season. Pellets containing LumiNova powder (treatment group) were prepared and placed on the calvaria of specimens of the sapphire devil Chrysiptera cyanea, a reef-associated damselfish that requires long days for gonadal recrudescence. A pellet without LumiNova powder was placed on the calvaria of the control fish (control group). Fish were reared at $26^{\circ}C$ under a light-dark cycle (12 h photophase, 12 h scotophase; LD 12:12) for 4 weeks. No difference in the gonadosomatic index (GSI) or ovarian histology was observed among the control, sham-operation, and treatment groups 1 week after the start of the experiment. After 4 weeks, the GSI of the control and sham-operation groups remained at low levels, and ovaries contained immature oocytes at the perinucleolus stage. In contrast, the treatment group exhibited significantly higher values of GSI as well as developed ovaries with fully vitellogenic oocytes. These results demonstrated that long-day conditions were produced by light emitted from the LumiNova pellets, thus stimulating ovarian development in the damselfish. Therefore, long-afterglow phosphorescent pigments can be used as an alternative to standard light sources for purposes of artificial stimulation of gonadal development in fish.

• Korean Journal of Materials Research
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• v.24 no.4
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• pp.194-200
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• 2014

Metallic Cr film coatings of $1.2{\mu}m$ thickness were prepared by DC magnetron sputter deposition method on c-plane sapphire substrates. The thin Cr films were ammoniated during horizontal furnace thermal annealing for 10-240 min in $NH_3$ gas flow conditions between 400 and $900^{\circ}C$. After annealing, changes in the crystal phase and chemical constituents of the films were characterized using X-ray diffraction (XRD) and energy dispersive X-ray photoelectron spectroscopy (XPS) surface analysis. Nitridation of the metallic Cr films begins at $500^{\circ}C$ and with further increases in annealing temperature not only chromium nitrides ($Cr_2N$ and CrN) but also chromium oxide ($Cr_2O_3$) was detected. The oxygen in the films originated from contamination during the film formation. With further increase of temperature above $800^{\circ}C$, the nitrogen species were sufficiently supplied to the film's surface and transformed to the single-phase of CrN. However, the CrN phase was only available in a very small process window owing to the oxygen contamination during the sputter deposition. From the XPS analysis, the atomic concentration of oxygen in the as-deposited film was about 40 at% and decreased to the value of 15 at% with increase in annealing temperature up to $900^{\circ}C$, while the nitrogen concentration was increased to 42 at%.

• Korean Journal of Materials Research
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• v.26 no.10
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• pp.577-582
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• 2016

$Dy^{3+}$ and $Eu^{3+}$-codoped $SrWO_4$ phosphor thin films were deposited on sapphire substrates by radio frequency magnetron sputtering by changing the growth and thermal annealing temperatures. The results show that the structural and optical properties of the phosphor thin films depended on the growth and thermal annealing temperatures. All the phosphor thin films, irrespective of the growth or the thermal annealing temperatures, exhibited tetragonal structures with a dominant (112) diffraction peak. The thin films deposited at a growth temperature of $100^{\circ}C$ and a thermal annealing temperature of $650^{\circ}C$ showed average transmittances of 87.5% and 88.4% in the wavelength range of 500-1100 nm and band gap energy values of 4.00 and 4.20 eV, respectively. The excitation spectra of the phosphor thin films showed a broad charge transfer band that peaked at 234 nm, which is in the range of 200-270 nm. The emission spectra under ultraviolet excitation at 234 nm showed an intense emission peak at 572 nm and several weaker bands at 479, 612, 660, and 758 nm. These results suggest that the $SrWO_4$: $Dy^{3+}$, $Eu^{3+}$ thin films can be used as white light emitting materials suitable for applications in display and solid-state lighting.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.4
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• pp.137-146
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• 2011

Vertically well-aligned ZnO nanowire (NW) arrays were synthesized directly on GaN/sapphire and Si substrate from Zn vapor deposition without catalysts. Experimental results showed that the number density, diameter, crystallinity and degree of the alignment of ZnO NWs depended strongly on both the substrate position and kind of the substrates used for the growth. The photoluminescence (PL) characteristics of the grown ZnO NW arrays exhibit a strong and sharp ultraviolet (UV) emission at 379 nm and a broad weak emission in the visible range, indicating that the obtained ZnO NWs have a high crystal quality with excellent optical properties. The as-grown ZnO NWs were characterized by using scanning electron microscopy (SEM), high resolution transmission electronic microscopy (HR-TEM), and X-ray diffraction (XRD).

• Korean Journal of Optics and Photonics
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• v.12 no.3
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• pp.219-224
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• 2001

Spectral phase interferometry for direct electric-field reconstruction (SPIDER) was fabricated and used to characterize pulses from a Ti:sapphire oscillator. In the SPIDER apparatus, two replicas of the input pulse were generated with a time delay of 200 fs and were upconverted by use of sum-frequency generation with a strongly chirped pulse using a 8-cm-long SFIO glass block at a 30-11m-thick type II BBO (p-BaBz04) crystal. The resulting interferogram was recorded with a UV-enhanced CCD array in the spectrometer. The spectral phase was retrieved by SPIDER algorithm in combination with independently measured pulse spectrum and the corresponding temporal intensity profile was reconstructed with a duration of 19 fs. As an independent cross-check of the accuracy of the method, we compared the interferometric autocorrelation (lAC) signal calculated from the SPIDER data with a separately measured lAC. The conventional, but unjustified, method of fitting a sechz pulse to the autocorrelation deceivingly yielded a pulse duration of 15 fs. This systematic underestimation of the pulse duration affirms the need for a complete characterization method. From the consideration in this paper, we concluded that the SPIDER could provide an accurate characterization of femtosecond pulses. ulses.

• Journal of Dental Rehabilitation and Applied Science
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• v.28 no.3
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• pp.319-326
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• 2012

For many years, ceramics have been used in fixed prosthodontics for achieving optimal esthetics. but, they have another use as well. Many studies today show ceramics can be used for biomaterials. In the beginning researchers made a start in the study of aluminium oxide and sapphire for biomaterial. The appearance of Zirconia began a new phase of research. Zirconia was introduced into implantology as an alternative to titanium, because of its white color, good mechanical properties and superior biocompatibility. But it is not easy to surface treatment in comparison with titanium. To overcome the limitation, interconnected porous bodies of zirconia were fabricated by sintering technique. And the technique of coating was developed. Therefore, some zirconia implants are currently available. It is thought that Research of biomaterials as a variety of puposes for the use of zirconia is looking very promising. The purpose of this paper reviews are to evaluation of zirconia as biomaterials.

• Transactions of the Korean hydrogen and new energy society
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• v.10 no.4
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• pp.191-196
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• 1999

4-probe resistivity measurement technique was used to study hydrogen A-D(Absorption-Desorption)kinetics on Pd films(18 to 67nm thick) from 25 to $50^{\circ}C$, from 0 to 5 torr hydrogen pressure. Pd films were made on sapphire substrate by thermal evaporation technique under high vacuum at room temperature. Upto about 100 hydrogen A-D cyclings, no pulverization was observed, but film was detached partially from substrate. Forward reaction and backward reaction rate were analyzed separately. The activation energies of hydrogen A-D processes were obtained from the Arrhenius plot of the reaction rates. The activation energies of Pd films are not strongly dependent on the thickness of the film. But the activation energy of very thin film( l8nm thick) was smaller than the others.

• Transactions on Electrical and Electronic Materials
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• v.11 no.6
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• pp.279-284
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• 2010

This study has been carried out to determine the optimal process conditions of $AZO:H_2$ thin films for the maximization of the transmittance of a blue GaN light-emitting diode (LED) with a wavelength of 470 nm. The Al-doped zinc oxide $(AZO):H_2$ thin films were deposited on a sapphire substrate by radio-frequency magnetron sputtering system with varying substrate temperatures, working pressures and annealing temperatures temperature, working pressure and annealing imposed on a AZO (2wt% $Al_2O_3$) ceramic target. The effect of these variables was investigated in order to improve the light extraction efficiency of the LED. As a result, the (002)-oriented peak was found in all the $AZO:H_2$ thin films. The lowest resistivity and the best transmittance at a wavelength of 470 nm was found to be $4.774\;{\times}\;10^{-4}\;{\Omega}cm$ and 92% at a substrate temperature of $500^{\circ}C$, working pressure of 7 mTorr and annealing temperature of $400^{\circ}C$. The transmittance of the $AZO:H_2$ thin film for the Blue GaN LED was improved by approximately 13% relative to that of a ITO thin film (T = 79%).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.231-231
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• 2010

Thermoelectric properties of a multi-layered thin film, which was composed with indium selenide and bismuth telluride, were investigated. The structure of the layered thin film is Bi-Te /In-Se/Bi-Te and it was prepared on sapphire substrate by RF magnetron sputter using stoichiometric $Bi_2Te_3$ (99.9%) and $In_2Se_3$(99.99%) target at room temperature. Then, it was annealed at temperature range of 150 - $500^{\circ}C$ in Ar ambient. Structural characterizations were done using X-ray diffraction(XRD, BRUKER, D8, 60kW) and transmission electron microscopy (TEM, FEI, Tecnai, F30 S-Twin), respectively. Cross-section of multi-layer structure was observed by Scanning electron microscopy (SEM). The resistivity and Seebeck coefficient of these samples were also measured by conventional equipment at room temperature. The maximum value of power factor was $1.16\;{\mu}W/k^2m$ at annealing temperature of $400^{\circ}C$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.7
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• pp.705-711
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• 2003

In this Paper, 2${\times}$100 $\mu\textrm{m}$ AlCaN/GaN HEMT's(on sapphire substrate) large signal model including thermal effect was extracted. An equation based empirical model was employed to make large signal model for convergence and high speed. Pulsed I-V measurement was performed to extract thermal resistance and capacitance. Power amplifiers with 9 mm and 15 mm AlCaN/GaN HEMTS were designed using scaled modeling results of 2${\times}$100 $\mu\textrm{m}$ device respectively. From comparisons between measured and simulated data, the model considering of thermal effects gave better agreement than without one. It demonstrates that thermal modeling must be performed for power amplifier that uses large size transistors.