• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.13 no.5
• /
• pp.235-240
• /
• 2003

The development of large area GaN substrates is one of important issues in expanding of GaN-based applications. In order to investigate the possibility, GaN thick films were grown by a sublimation technique, using MOCVD-GaN films grown on a sapphire as a seed-crystal substrate and a commercial GaN powder as a source material. The pressure in chamber under the fixed flow rate of $N_2$ gas and $NH_3$ gas was kept at 1 atmosphere and the effects of the various processing parameters such as the distance between source material and seed crystal, the temperature of top- and bottom heater and the growth time during the growth of GaN thick film were investigated. The growth feature and microstructure of the GaN thick films were observed by SEM and XRD. The optical bandgap properties and the defects were evaluated by the PL measurement. By these results, the growth conditions such as the distance between the GaN source and the seed substrate, the growth temperature and the growth time were determined for the satisfied growth of GaN thick films.

• Progress in Superconductivity and Cryogenics
• /
• v.6 no.3
• /
• pp.50-55
• /
• 2004

We fabricated and tested a resistive type superconducting fault current limiter (SFCL) of three-phase 6.6 $kV_{rms}/200 A_{rms}$ rating based on YBCO thin films grown on sapphire substrates with a diameter of 4 inches, Short circuit tests were carried out at a accredited test facility for single line-to- ground faults, phase-to-phase faults and three-phase faults, Each phase of the SFCL was composed of 8${\times}$6 elements connected in series and parallel respectively. Each element was designed to have the rated voltage of 600 $V_{rms}$. A NiCr shunt resistor of 23 Ω was connected to each element for simultaneous quenches. Firstly, single phase-to-ground fault tests were carried out. The SFCL successfully developed the impedance in the circuit within 0.12 msec after fault and controlled the fault current of 10 $kA_{rms} below 816 A_{peak}$ at the first half cycle. In addition, in case of phase-to-phase fault and three- phase fault test. simultaneous quenches among the SFCLs of the phases successfully accomplished. In conclusion. the SFCL showed excellent performance of current limitation upon fault and stable operation regardless of the amplitude of fault currents.

• Transactions of the Korean Society of Machine Tool Engineers
• /
• v.14 no.2
• /
• pp.33-41
• /
• 2005

ZnO epilayer was synthesized by the pulsed laser deposition(PLD) process on Al$_2$O$_3$ subsorte after irradiating the surface of ZnO sintered pellet by ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A1203) substrate at the 境mperature of 400$^{circ}$C. The crystalline structure of epilayer was investigated by the Photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measure with Hall effect by van der Pauw mothod are $8.27\times$1016cm$^{-3}$ and 299 cm$^{2}$/V$\cdot$s at 293 K respectively, The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, E$_g$(T)= 3.3973 eV - ($2.69\times$ 10$^{-4}$ eV/K)T$^{2}$/(T + 463K). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of V$_{Zn}$, V$_{O}$, Zn$_{int}$, and O$_{int}$ obtained by PL measurements were classified as a donor or acceptor type. In addition we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/Al$_2$O$_3$ did not firm the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

• Journal of Sensor Science and Technology
• /
• v.15 no.3
• /
• pp.216-221
• /
• 2006

ZnO thin films prepared by PLD method exhibit an excellent optical property, but may have some problems such as incomplete surface roughness and crystallinity. In this study, undoped ZnO buffer layers were deposited on (0001) sapphire substrates by ultra high vacuum pulse laser deposition (UHV-PLD) and molecular beam epitaxy (MBE) methods, respectively. After post annealing of ZnO buffer layer, undoped ZnO thin films were deposited under different oxygen pressure ($35{\sim}350$ mtorr) conditions. The Arsenic-doped (1, 3 wt%) ZnO thin layers were deposited on the buffer layer of undoped ZnO by UHV-PLD method. The optical property of the ZnO thin films was analyzed by photoluminescence (PL) measurement. The ${\theta}-2{\theta}$ XRD analysis exhibited a strong (002)-peak, which indicates c-axis preferred orientation. Field emission-scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO thin films were varied by oxygen partial pressure, Arsenic doping concentration, and deposition method of the undoped ZnO buffer layer. The denser and smoother films were obtained when employing MBE-buffer layer under lower oxygen partial pressure. It was also found that higher Arsenic concentration gave the enhanced growing of columnar structure of the ZnO thin films.

• Journal of the Korean Society for Precision Engineering
• /
• v.26 no.3
• /
• pp.25-31
• /
• 2009

Femto-second laser ablation with the various feed velocities of the Invar alloy and the micro surface milling for the processing condition were studied. We used a regenerative amplified Ti:sapphire laser with a 1kHz repetition rate, 184fs pulse duration time and 785nm wavelength. Femto-second laser pulse was irradiated on the Invar alloy with the air blowing at the condition of various laser peak powers and feed velocities. An ablation characteristic according to feed velocity of the Invar alloy was appeared as the non-linear type at different zone of energy fluence. The micro surface milling of the Invar alloy using a mapping method was investigated. The optimal condition of micro surface milling was laser peak power of 22.8mW, feed velocity of 1 mm/s, beam gap of $1{\mu}m$. With the optimal processing condition, the fine rectangular shape without burr and thermal damage was achieved. Using the femto-second laser system, it demonstrates excellent tool for micro surface milling of the Invar alloy without heat effects and poor edge.

• Journal of Korean Vacuum Science & Technology
• /
• v.4 no.1
• /
• pp.23-26
• /
• 2000

We have fabricated by metal organic chemical vapor deposition (MOCVD) In$\_$0.13/Ga$\_$0.87/N/GaN multiple quantum well (MQW) with thickness as thin as 10 A and barriers also of th same width on (0001) sapphire substrate. We have investigated this thin MQW by steady-state and time-resolved photoluminescence(PL) in picosecond time scale in a wide temperature range from 10 to 290 K. In the PL at 10 K, we observed a broad peak at 3.134 eV which was attributed to the quantum well emission of InGaN. The full width at half maximum (FWHM) of this peak was 129 meV at 10 K and its broadening at low temperatures was considered to be due to compositional fluctuations and interfacial disorder in the alloy. The narrow width of the quantum well was mainly responsible for the broadening of the emission linewidth. We also observed an intense and sharp peak at 3.471 eV of GaN barrier. From the temperature dependent PL measurements, the activation energy of the InGaN quantum well emision peak was estimated to be 69 meV. The lifetime of the quantum well emission was found to be 720 ps at 10 K, which was explained in terms of the exciton localization arising from potential fluctuations.

• Journal of the Korean Vacuum Society
• /
• v.22 no.6
• /
• pp.291-297
• /
• 2013

ZnO nanowires were synthesized by vapor-liquid-solid (VLS) process using ZnO and graphite powders on the sapphire substrate coated with an Au film as a catalyst. ZnO nanowires had two prominent emission bands; i) near-band edge (NBE) emission band at 380 nm, and ii) a relatively stronger deep level (DL) emission band ($I_{NBE}/I_{DL}$ <1). In order for the ZnO nanowires to be utilized as an effective material for UV emitting devices, the photoluminescence intensity of NBE needs to be improved with the decreased intensity of DL. In the current study, hydrogen plasma treatment was performed to improve the photoluminescence characteristics of ZnO nanowires. With the hydrogen plasma treatment time of more than 120 sec, the extent of performance improvement was gradually decreased. However, the intensity ratio of NBE to DL ($I_{NBE}/I_{DL}$) was significantly improved to about 4 with a relatively short plasma treatment time of 90 sec, suggesting hydrogen plasma treatment is a promising approach to improve the photoluminescence properties of ZnO nanowires.

• Korean Journal of Materials Research
• /
• v.10 no.3
• /
• pp.241-245
• /
• 2000

Thick GaN films were grown on (0001) sapphire substrates using the direct reaction gallium and ammonia. The GaN films grew dominantly along [0002] direction, but included the growth of GaN(1010) planeq with V-shaped facetted surfaces at low temperature. With increasing growth temperature, however, the growth of GaN (1010) and (1011) planes was appeared from the films, which gives rise to the growth of hexagonal crystal with pyramid-shaped surface. The growth rate of GaN films increased with increasing growth temperature, but decreased at $1270^{\circ}C$ because the GaN films began to decompose into Ga and N at the temperature. It seemed that the crystal and optical qualities of the GaN films improve with increasing $NH_3$ flow rate. From X-ray diffraction (XRD) and photoluminescence (PL) measurements, it was observed that the yellow luminescence (YL) appeared to be significant as the peak intensity of (1010) plane of XRD spectra increased.

• Progress in Superconductivity
• /
• v.4 no.2
• /
• pp.137-143
• /
• 2003

In measuring the microwave surface resistance of high-Tc superconductor (HTS) films using the dielectric-loaded cavity resonator method, one of the most important factors that limit the measurement sensitivity is the measurement error in the loss tangent ($tan\delta$) of the dielectric rod placed inside the cavity. We have measured the effective surface resistance ( $R_{S}$ $^{eff}$) of$ YBa_2$$_Cu3$$_{7-{\delta}}$ (YBCO) films and the $tan\delta$ of rutile ($TiO_2$) using the 'two-tone'method suggested by Kobayashi et at. [IEEE, MTT-S Digest, 495, (2001)], which enables simultaneous measurements of both the $R_{S}$ $^{eff}$ fof HTS films and the $tan\delta$ of the rutile with high sensitivity. A rutile-loaded cavity resonator with the $TE_{012}$ and $TE_{021}$ resonant frequencies at 13.67 - 14.01 GHz is used for this purpose. At temperatures where the two modes do not couple with other modes, the $R_{S}$ $^{eff}$ of YBCO films and $tan\delta$ of rutile measured by the two-tone method appear to match well with the corresponding values measured using the reported $tan\delta$ values of sapphire within 10 %. Usefulness of the 'two-tone' method for microwave characterization of HTS films and dielectrics is discussed.d.ielectrics is discussed.ussed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.317-318
• /
• 2013

Terahertz (THz) wave는 광학 영역과 방송파 영역 사이에 광대역 주파수 스펙트럼을 차지하고 있다. X선과는 달리 비이온화 광원으로 직진성, 투과성, 낮은 에너지 (meV)를 가지고 있어 비파괴적이고 무해한 장점을 지니고 있다. 본 연구에서는 In0.53Ga0.47As:Be/In0.52Al0.48As의 multi quantum well (MQW)을 Semi-insulting InP:Fe substrate 위에 active layer의 두께와 적층을 변화주어서 성장하였고Au (200 nm)/Ti (30 nm)의 금속전극으로 공정을 하였다. Ti:Sapphire femtosecond pulse laser를 조사하여 THz time-domain spectrometer 시스템을 이용하여 광전도검출법으로 THz 검출 특성을 연구하였다. THz 검출은 짧은 전하수명과 높은 저항을 요구한다. LTInGaAs의 경우 AsGa antisite로 인하여 짧은 전하수명을 얻게 되면 n-type의 높은 전하밀도를 가지게 되어서 저항이 낮아지게 된다. 높은 저항을 만들기 위하여 Be doping을 이용하여 과잉의 전자들을 보상하고 InAlAs layer를 삽입시켜 보다 높은 저항을 얻었다. LT-InGaAs:Be는 LT-GaAs보다 1/70 정도의 amplitude를 보이는데 LT-InGaAs/InAlAs MQW의 경우 LT-GaAs 대비 약 3/4 정도의 큰 amplitude를 얻었다. 또 active layer의 두께가 얇고 적층이 많을수록 신호가 커지는 것을 알 수 있었다. 이는 상대적으로 band gap이 큰 InAlAs층이 더 높은 저항을 만든 것으로 사료된다.