The effect of the processing parameters on the growth of GaN thick films by a sublimation technique |
노정현
(한양대학교 세라믹공학과)
박용주 (한국과학기술연구원 나노소자연구센터) 이태경 (한양대학교 세라믹연구소) 심광보 (한양대학교 세라믹공학과) |
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Plasma-excited organometallic vapor phase epitaxy of GaN on (0001) sapphire
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DOI |
2 |
High-brightness InGaN blue, green and yellow lightemitting diodes with quantum well structures
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DOI ScienceOn |
3 |
Current status of GaN crystal growth by sublimation sandwich technique
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DOI |
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5 |
MOVPE: Is there any other technology for optoelectronics
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DOI |
6 |
High transconductance heterostructure field-effect transistors based on AlGaN/GaN
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DOI ScienceOn |
7 |
Micro-structure of GaN films on GaAs (100) substrates grown by hydride vapor-phase epitaxy
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DOI ScienceOn |
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Growth of single crystal gan substrate using hydride vapor phase epitaxy
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DOI ScienceOn |
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Pergect substrate within reach for wide-band-gap materials
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