• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.180-182
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• 1997

GaN crystals were deposited by tile direct reaction between ammonia and gallium at 105$0^{\circ}C$, 107$0^{\circ}C$ and 110$0^{\circ}C$ on (0001) plane sapphire substrate. The size of GaN crystals were increased with reaction temperature, but its were decreased with increasing the flow rates of NH$_3$. The size of GaN of 46${\mu}{\textrm}{m}$ were deposited ell sapphire substrate at the reaction temperature of 107$0^{\circ}C$ for growth time of 60 min.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.355-357
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• 2001

ZnO thin films were deposited on (001) sapphire substrate at various ambient gas pressure by pulsed laser deposition(PLD). Oxygen was used as ambient gas, and oxygen gas pressure was varied from 1.0${\times}$10$\^$-6/ Torr to 500 mTorr during the film deposition. As oxygen gas pressure increase in the region below critical pressure photoluminescence(PL) intensity in UV and green region increase. As oxygen gas pressure increase in the region above critical pressure photoluminescence(PL) intensity in UV and green region decrease. Each of critical ambient gas Pressures was 350 mTorr for UV emission and 200 mTorr for green emission.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.91-95
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• 2011

The light extraction efficiency in GaN based LED was analyzed qualitatively. The extraction efficiency was simulated with patterned shape, depth, size and spacing by using ray-tracing simulation. In simulation result, patterned shape and depth for the optimized extraction efficiency in PSS LED were in indented Hemi-sphere solid. Through the optimal patterning of the various factors, about 40% enhancement in extraction efficiency was obtained.

• Proceedings of the Optical Society of Korea Conference
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• 2005.02a
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• pp.156-157
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• 2005

Monte Carlo photon simulation 기법을 사용하여 광추출효율 관점에서 InGaN LED를 분석하였다. InGaN/sapphire 칩의 경우, AlInGaP나 InGaN/SiC 칩에서와는 달리, 칩의 측벽면을 기울여 주는데서 오는 광추출효율 개선 효과는 매우 미미하였다. 이는 InGaN/sapphire 칩의 경우 사파이어 기판의 굴절률 상대적으로 작아서 활성층으로부터 생성된 광자들의 상당량이 기판으로 넘어갈 때 전반사현상으로 말미암아 기판으로 넘어가지 못하고 상대적으로 두께가 매우 얇은 에피택시 층에 갇히기 때문으로 파악되었다. 이와 같은 효과는 epitaxial side down mount의 광추출효율이 크게 개선되지 못하는 원인으로도 작용하게 되는데, epitaxial side down mount의 잠재력을 살릴 수 있는 방안의 하나는 texture된 기판위에 결정층을 성장시키는 것이라고 할 수 있다.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.209-225
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• 1999

Detailed description of the crystal growth methods permitting one to obtain complicated shape crystals from the melt is given. The variable shaping technique provides the growth of crystals with a discrete altering cross-section configuration during crystallization. The dynamic local shaping technique enables one to grow items with a continuous alteration of the side surface profile by a preset program.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.7
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• pp.591-596
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• 2002

In this work, epitaxial GaN is grown on sapphire substrate in AlGaN/GaN heterostructures. Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as a function of the square root of the oxygen partial Pressure. Oxygen is a shallow donor with a thermal ionization energy of $27\pm2 meV$ measured by temperature dependent Hall effects. A compensation ratio of $\theta$=0.3~0.4 was determined from Hall effect measurements. The formation energy of $O_N$ of $E^F$ =1.3eV determined from the experimental data, is lower than the theoretically predicted vague.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.640-643
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• 2003

We present investigations of the surface micromachining for transparent glass substrate, e.g. soda lime glass using tightly focused 800nm Ti:sapphire femtosecond laser. In this study, experiment conditions such as laser intensity, scanning speed, focus position were controlled as variable parameters to decide optimal machining conditions. This study shows clearly that laser intensity and scanning speed are dominant factors for good surface morphology. Using the optimal conditions, grooves with 50${\mu}{\textrm}{m}$ line width were fabricated on glass substrate and their surface morphologies were investigated from SEM image.

• Korean Journal of Optics and Photonics
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• v.5 no.4
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• pp.466-472
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• 1994

An Argon laser pumped Ti:Sapphire laser has been constructed and self-mode locked. Mode-locking was initiated by a moving mirror mounted on the ball slider and maintained by the self-focusing in the laser crystal and an aperture inside the resonator. A prism pair was used to reduce group velocity dispersion. The bandwidth and the pulse width of the mode-locked pulse were 11 nm, $1000\pm20fs$, respectively. ively.

• Korean Journal of Optics and Photonics
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• v.5 no.1
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• pp.67-73
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• 1994

The simulation code was developed to analyze the amplification properties of the regenerative amplifier, such as gain narrowing, nonlinear effect, and energy saturation. To reduce gain narrowing in the regenerative amplifier, the input pulse with a symmetrical shape and the same center wavelength of the active medium should be amplified in the active medium with a broad fluorescence linewidth. In this respect, Ti:Sapphire with a low nonlinear refractive index, a high saturation fluence, and a broad fluorescence linewidth is the most appropriate medium for the regenerative amplifier. The knowledge and the important parameters were acquired for the optimum design of the regenerative amplifier.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.224-225
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• 2000

Transparent and hard materials such as sapphire are used for many industrial applications as optical windows, hard materials on mechanical contact against abrasion, and substrate materials for opto-electronic semiconductor devices such as blue LED and blue LD etc. The materials should be cut along the proper shapes possible to be used for each application. In case of blue LED, the blue LED wafer should be cut to thousands of blue LED pieces at the final stage of the manufacturing process. The process of cutting the wafer is usually divided into two steps. The wafer is scribed along the proper shapes in the first step. It is inserted between transparent flexible sheets for easy handling. And then, it is broken and split in the next step. Harder materials such as diamonds are usually used to scribe the wafer, while it has a problem of low depth of scribing and abrasion of the harder material itself. The low depth of scribing can induce failure in breaking the wafer along the scribed line. It was also known that the expensive diamond tip should be replaced frequently for the abrasion. (omitted)