한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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분위기 산소압 변화에 따른 ZnO 박막의 발광특성 변화

Ultraviolet and green emission property of ZnO thin film grown at various ambient pressure

  • 강정석 (연세대학교 전기전자공학과) ;
  • 심은섭 (연세대학교 전기전자공학과) ;
  • 강홍성 (연세대학교 전기전자공학과) ;
  • 김종훈 (연세대학교 전기전자공학과) ;
  • 이상렬 (연세대학교 전기전자공학과)
  • 발행 : 2001.07.01
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초록

ZnO thin films were deposited on (001) sapphire substrate at various ambient gas pressure by pulsed laser deposition(PLD). Oxygen was used as ambient gas, and oxygen gas pressure was varied from 1.0${\times}$10$\^$-6/ Torr to 500 mTorr during the film deposition. As oxygen gas pressure increase in the region below critical pressure photoluminescence(PL) intensity in UV and green region increase. As oxygen gas pressure increase in the region above critical pressure photoluminescence(PL) intensity in UV and green region decrease. Each of critical ambient gas Pressures was 350 mTorr for UV emission and 200 mTorr for green emission.

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