• Nonlinear Functional Analysis and Applications
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• v.26 no.5
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• pp.995-1009
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• 2021

Many iterative algorithms like that Picard, Mann, Ishikawa and S-iteration are very useful to elucidate the fixed point problems of a nonlinear operators in various topological spaces. The recent trend for elucidate the fixed point via inertial iterative algorithm, in which next iterative depends on more than one previous terms. The purpose of the paper is to establish convergence theorems of new inertial Picard normal S-iteration algorithm for nonexpansive mapping in Hilbert spaces. The comparison of convergence of InerNSP and InerPNSP is done with InerSP (introduced by Phon-on et al. [25]) and MSP (introduced by Suparatulatorn et al. [27]) via numerical example.

• Journal of the Korean institute of surface engineering
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• v.49 no.5
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• pp.467-471
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• 2016

In order to investigate the Na gettering, PSG/$SiO_2$/Al-1%Si multilevel thin films were fabricated. DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and PSG/$SiO_2$ passivations, respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling and XPS (X-ray Photoelectron Spectroscopy) analysis were used to determine the distribution and binding energies of Na, Al, Si, O, P and other elements throughout the PSG/$SiO_2$/Al-1%Si multilevel thin films. Na peaks were mainly observed at the the PSG/$SiO_2$ interface and at the $SiO_2$/Al-1%Si interfaces. Na impurity gettering in PSG/$SiO_2$/Al-1%Si multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and O elements in PSG passivation appears to be $SiO_2$.

• Journal of the Korean Institute of Intelligent Systems
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• v.7 no.3
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• pp.72-80
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• 1997

A new design method for Takagi-Sugeno (T-S in short) fuzzy controller which guarantees global asymptotic stability and satisfies a desired performance is proposed in this paper. The method uses LMI(Linear Matrix Inequality) approach to find the common symmetric positive definite matrix P and feedback fains K/sub i/, i= 1, 2,..., r, numerically. The LMIs for stability criterion which treats P and K'/sub i/s as matrix variables is derived from Wang et al.'s stability criterion. Wang et al.'s stability criterion is nonlinear MIs since P and K'/sub i/s are coupled together. The desired performance is represented as $ LMIs which place the closed-loop poles of $ local subsystems within the desired region in s-plane. By solving the stability LMIs and pole placement constraint LMIs simultaneously, the feedback gains K'/sub i/s which gurarntee global asymptotic stability and satisfy the desired performance are determined. The design method is verified by designing a T-S fuzzy controller for an inverted pendulum with a cart using the proposed method.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.7
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• pp.3117-3122
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• 2011

Skull A-P projections are the bi-product where the ESD (Entrance Surface Dose) for digital radiography is much higher than that conventional screen-film radiography. Therefore, the aim of this study was to reduce radiation doses to patients by using an added filter. This research focuses on the identification of the reduction of exposure to radiation based on the thickness of an added filter when applying the 'Skull A-P Projection' by using the 'Skull Phantom'. Also, an experiment was conducted to evaluate the qualitative decline of images through filtration. The measurement of one's exposed dose to radiation was executed by locating the 'Skull Phantom' on the position of the 'Skull AP,' while changing 16 kinds of added filters from 0.1 mmAl to 0.5 mmCu + 2.0 mmAl in terms of incident and penetrating doses. For the qualitative evaluation of images, a total number of 17 images have been acquired in the 'Skull Phantom' under the same conditions as those for the measurement of one's exposed dose. The acquired images have been evaluated by a radiological specialist. As a result, the images with a diagnostic value have been obtained by using such added filters as the compound filter of 0.2 mmCu +1.0 mmAl. The exposed dose absorbed on the 'Skull Phantom' is about 0.6 mGy. The value is only 12% of 5 mGy, the ESD value acquired on the 'Skull P-A Projection', which is recommended by the International Atomic Energy Agency (IAEA). As a result, depending on the parts of inspection, it is possible to reduce the patient's exposed dosage of radiation considerably by using an appropriate added filter.

• Corrosion Science and Technology
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• v.11 no.1
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• pp.9-14
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• 2012

The formation of the Fe-Al inhibition layer in hot-dip galvanizing is a confusing issue for a long time. This study presents a characterization result on the inhibition layer formed on C-Mn-Cr and C-Mn-Si dual-phase steels after a short time galvanizing. The samples were annealed at $800^{\circ}C$ for 60 s in $N_{2}$-10% $H_{2}$ atmosphere with a dew point of $-30^{\circ}C$, and were then galvanized in a bath containing 0.2 %Al. X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) was employed for characterization. The TEM electron diffraction shows that only $Fe_{2}Al_{5}$ intermetallic phase was formed. No orientation relationship between the $Fe_{2}Al_{5}$ phase and the steel substrate could be identified. Two peaks of Al 2p photoelectrons, one from metallic aluminum and the other from $Al^{3+}$ ions, were detected in the inhibition layer, indicating that the layer is in fact a mixture of $Fe_{2}Al_{5}$ and $Al_{2}O_{3}$. TEM/EDS analysis verifies the existence of $Al_{2}O_{3}$ in the boundaries of $Fe_{2}Al_{5}$ grains. The nucleation of $Fe_{2}Al_{5}$ and the reduction of the surface oxide probably proceeded concurrently on galvanizing, and the residual oxides prohibited the heteroepitaxial growth of $Fe_{2}Al_{5}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.46-47
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• 2005

이번 연구는 $BCl_3/CF_4$ 플라즈마를 사용하여 반도체소자 제조 시 널리 이용되는 GaAs 계열반도체 중 대표적인 재료인 GaAs/AlGaAs 및 GaAs/InGaP 구조를 선택적으로 건식 식각한 후 분석한 것이다. 공정변수로는 ICP 소스파워를 0-500W, RIE 파워를 0-50W 그리고 $BCl_3/CF_4$ 가스 혼합비를 중점적으로 변화시켰다. $BCl_3$ 플라즈마만을 사용한 경우 (20$BCl_3$, 20W RIE power, 300W ICP source power, 7.5mTorr) 는 GaAs:AlGaAs의 선택비가 0.5:1 이었으며 이때 GaAs의 식각률은 ~2200${\AA}/min$ 이었으며 AlGaAs의 식각률은 ~4500${\AA}/min$ 이었다. 식각 후 표면의 RMS roughness은 < 2nm로 깨끗한 결과를 보여주었다. 15% $CF_4$ 가스가 혼합된 $17BCl_3/3CF_4$, 20W RIE power, 300W ICP source power, 7.5mTorr의 조건에서 3분 동안 공정한 결과 순수한 $BCl_3$ 플라즈마만을 사용한 경우보다 표면은 다소 거칠었지만 (RMS roughness: ~8.4) GaAs의 식각률 (~980nm/min)과 AlGaAs와 InGaP에 대한 GaAs의 선택도 (GaAs:AlGaAs=16:1, GaAs:InGaP=38:1)는 크게 증가하였다. 그리고 AlGaAs 및 InGaP의 경우 식각 시 나타난 휘발성이 낮은 식각 부산물 ($AlF_3:1300^{\circ}C$, $InF_3:1200^{\circ}C$)로 인하여 50nm/min 이하의 낮은 식각률을 보였고, 62.5%의 $CF_4$가 혼합된 $7.5BCl_3/12.5CF_4$플라즈마의 조건에서는 AlGaAs 및 InGaP에 대한 GaAs의 선택도가 각각 280:1, 250:1을 나타내었다.

• The Korean Journal of Emergency Medical Services
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• v.5 no.1
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• pp.23-35
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• 2001

This study was done to examine the relationship between stress and coping methods of 86 emergency medical technicians with the 1st or 2nd grade qualifications who serve at 36 fire stations in Gwangju and Jeonnam region from Aug. 1 to Aug. 31, 2001. Data collection was done by questionnaire. The research instruments used the stress measure tool developed by Cho Hee et al.(1999) and revised and complemented by the researcher to measure firemen's stress, and health instrument revised by Suh Mi Hye et al(1993). Data were analyzed by t-test, ANOVA, and Pearson's correlation using SPSS. The results of this study were as follows : 1. The mean score of perceived stress was 3.4. The mean score of coping methods was 2.11. 2. The levels of stress according to the general characteristics of subjects were significantly different at marital status(t=7.054, p=.009) and in relation with organization(t=3.989, p=.049). 3. The relationship between levels of stress and health status was significantly correlated(r=.325, p=.000), and so the hypothesis of this research, "the less levels of stress, the better health status is." was supported. 4. The relationship between stress and health status was significantly different at crisis status(r=.393, p=.000), relation with organization(r=.348, p=.001), the characteristics of subjects(r=.387, p=.000), special knowledge and technology(r=.337, p=.001), and the roll complication as a professional(r=.343, p=.001).

• Journal of fish pathology
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• v.18 no.3
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• pp.205-214
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• 2005

The isolates, which has caused considerable damage to the olive flounder farm located in the eastern coast of Korea showed 99% sequence homology in the comparison of 16s rRNA gene of P. damselae subsp. damselae ATCC 33539. The present P. damselae was identical to the biotype No.8 in Pedersen et al. (1997) and the same LPS protein pattern as P. damselac subsp. damselae ATCC 33539. The comparison of infection rates among present P. damselae and Vibrio spp. showed that isolated P. damselae was the highest, followed by V. anguillarium, V. harveyi. and V. ordalii.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.88-88
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• 2011

ZnO는 직접 천이형 반도체로써, 상온에서 3.4eV에 해당하는 띠틈을 가지고 있다. 뿐만 아니라 60meV의 큰 엑시톤 결합에너지를 가지고 있어 단파장 광전 소자 영역의 LED(Light Emitting Diode)나 LD(Laser Diode)에 널리 사용되고 있다. 하지만 일반적으로 격자틈새 Zn(Zni2+)이온이나 O 빈자리(V02+)이온과 같은 자연적인 도너 이온이 존재하여 n-형 전도성을 나타낸다. 그러므로 ZnO계 LED와 LD의 개발에 있어서 가장 중요한 연구 과제는 재현성 있고 안정된 고농도의 p-형 ZnO박막을 성장시키는 것이다. 하지만, 자기보상효과나 얕은 억셉터 준위, 억셉터의 낮은 용해도로 인하여 어려움을 가지고 있다. 본 연구에서는 고품질의 p-형 ZnO박막을 제작하기 위해 AlN를 도핑시킨 ZnO박막을 RF 마그네트론 스퍼터링 법을 이용하여 Ar과 O2분위기에서 성장시켰다. ZnO와 AlN타겟을 동시에 사용하였으며, ZnO타겟에 걸어준 RF 파워는 80W, AlN타겟에 걸어준 RF 파워는 5~20W로 변화시켰다. 박막의 전기적, 광학적 특성은 XPS (X-ray Photoelectron Spectroscopy), REELS (Reflection Electron Energy Loss Spectroscopy), XRD (X-ray Diffraction), SIMS (Secondary Ion Mass Spectrometry), AES (Auger Electron Spectroscopy), Hall measurement를 이용하여 연구하였다. XPS측정결과, AlN를 도핑시킨 ZnO박막의 Zn2p3/2와 O1s피크는 undoped ZnO박막의 피크보다 낮은 결합에너지에서 측정되었다. 모든 박막이 결정화 되었으며, (002)방향으로 우선적으로 성장된 것을 확인할 수 있었다. 홀 측정 결과, 기판을 $200^{\circ}C$로 가열하면서 성장시킨 박막이 p-형을 나타내었으며, 비저항(Resistivity)이 $5.51{\times}10^{-3}{\Omega}{\cdot}m$, 캐리어 농도(Carrier Concentration)가 $1.96{\times}1018cm^{-3}$, 이동도(Mobility)가 $481cm^2$/Vs이었다. 또한 QUEELS -Simulation에 의한 광학적 특성분석 결과, 가시광선영역에서 투과율이 90%이상으로 투명전자소자로의 응용이 가능하다는 것을 보여주었다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.2
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• pp.111-115
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• 2001

Metamorphic InAlAs/InGaAs HEMT are successfully demonstrated, exhibiting several advantages over conventional P-HEMT on GaAs and LM-HEMT on InP substrate. The strain-relaxed metamorphic structure is grown by MBE on the GaAs substrate with the inverse-step graded InAlAs metamorphic buffer. The device with 40% indium content shows the better characteristics than the device with 53% indium content. The fabricated metamorphic HEMT with $0.2\mu\textrm{m}$T-gate and 40% indium content shows the excellent DC and microwave characteristics of $V_{th}-0.65V,{\;}g_{m,max}=620{\;}mS/mm,{\;}f_T120GHZ{\;}and{\;}f_{max}=210GHZ$.