• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1501-1503
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• 1999

The $(Sr_{0.85}Ca_{0.15})TiO_3$(SCT) thin films are deposited on Pt-coated electrode$(Pt/TiO_2/SiO_2/Si)$ using RF sputtering method. Ag, Cu, Al, Pt films for the formation of top eletrode were doposited on SCT thin films by thermal evaporator and sputtering. The effects of top electodes have be studied on SCT samples with a variety of top electrode materials.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.381-384
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• 2003

In this paper, cobalt (Co)-electrode FBAR devices fabricated on seven-layered Bragg Reflectors are presented along with their resonance characteristics. ZnO films are used as the resonating material in FBAR devices where the Co electrode is 3000$\AA$ thick. All processes are preformed in an RF magnetron sputtering system. As a result of characterization, the resonance characteristics are observed to depend strongly on the quality of ZnO film and Bragg Reflectors. In addition, the FBAR devices with W/SiO$_2$ reflectors show good resonance characteristics in term of return loss and quality-factor (Q-factor).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.716-722
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• 2003

ZnO thin films were deposited on Al and Pt electrodes by an RF reactive sputtering system for the fabrication of FBAR (film bulk acoustic wave resonator), and the effect of thermal treatment temperature on their c-axis preferred orientation was investigated. SEM experiments show that columnar structure of ZnO thin films were grown with c-axis normal to electrode material, and XRD experiments show that both ZnO films were grown with (002) plane preferred orientation, but larger diffraction peak was observed with Pt electrode. The peak intensity increased with higher thermal treatment temperature, but c-axis preferred orientation was diminished. The surface roughness of Al thin film was higher than that of Pt, and these affect the surface roughness of ZnO film deposited on the electrode. Though the preferred orientation with respect to Pt(111) plane was improved with higher thermal treatment temperature, this could not improve the c-axis orientation of ZnO film.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.295-295
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• 2016

Recently, TCO films with low carrier concentration, high mobility and high work function are proposed beneficial as front electrode in HIT solar cell due to free-carrier absorption in NIR wavelength region and low Schottky barrier height in the front TCO/a-Si:H(p) interface. We report high transmittance and work function zirconium-doped indium tin oxide (ITO:Zr) films with various plasma (Ar/O2 and Ar) conditions. The role of (Ar/O2) plasma was to enhance the work function of the ITO:Zr films whereas the pure Ar plasma based ITO:Zr showed good electrical properties. The RF magnetron sputtered ITO:Zr films with low resistivity and high transmittance were employed as front electrode in HIT solar cells, yield the best performance of 18.15% with an open-circuit voltage of 710 eV and current density of 34.63 mA/cm2. The high work function ITO:Zr films can be used to modify the front barrier height of HIT solar cell.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.547-552
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• 2003

ZnO thin films on glass substrate were deposited by RF magnetron reactive sputtering at 100 W, 1.33 Pa, Ar/O2=50 : 50, 200$^{\circ}C$, and a target/substrate distance of 4 cm. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, SEM, AFM, RBS, and electrometer. All films showed a strong preferred c-axis orientation and the chemical stoichiometry. The propagation velocity of ZnO/IDT/glass of single electrode and double electrode types SAW filter was about 2,589 m/sec, 2,533 m/sec and insertion loss was a minimum value of about -11 dB and -21 dB, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.865-869
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• 2002

The structural and electrical properties of PZT (lead zirconate titante) thin films grown on Pt (platinum) and Ru/Ru $O_2$(ruthenium/ruthenium oxide) electrodes were investigated. Thin films of PZT were deposited on a variety of electrodes using the rf-magnetron sputtering process. PZT films exhibited polycrystalline structure with strong PZT (100) plane and weak (211) plane for an optimizied Pt electrode and (100), (101), (111), (200), (210), (211) planes for Ru/Ru $O_2$. Switching polarization versus fatigue characteristic of Pt/Ti electrodes showed 20% degradation up to 1 $\times$ 10$_{9}$ cycles. No significant fatigue was observed in the films on Ru/Ru $O_2$ electrodes up to Ix109 test cycles. The results show that the new Ru/Ru $O_2$ bottom electrodes are expected to reduce the degradation of ferroelectric fatigue.

• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.13-16
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• 2012

Zinc oxide (ZnO) films were deposited by an RF magnetron sputtering system with the RF power of 200W and 300W and flow rate of oxygen gases of 20 and 30 sccm, in order to research the growth of ZnO on carbon doped silicon oxide (SiOC) thin film. The reflectance of SiOC film on Si film deposited by the sputtering decreased with increasing the oxygen flow rate in the range of long wavelength. In comparison between ZnO/Si and ZnO/SiOC/Si thin film, the reflectance of ZnO/SiOC/Si film was inversed that of ZnO/Si film in the rage of 200~1000 nm. The transmittance of ZnO film increased with increasing the oxygen gas flow rate because of the transition from conduction band to oxygen interstitial band due to the oxygen interstitial (Oi) sites. The low reflectance and the high transmittance of ZnO film was suitable properties to use for the front electrode in the display or solar cell.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1333-1334
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• 2007

Al thin film was the most popular electrode in semiconductor and flat panel display world, because of its electrical conductivity, selectivity and easy to apply to thin film. However, Al thin films were not good to use on the bottom electrode about the crystalline growth of inorganic compound materials such as ZnO, AlN and GaN, because of its surface roughness and melting points. In this paper, we investigated Ar plasma surface treatment of Al thin film to enhance the surface roughness and electrical conductivity using the reactive ion etching system. Several process conditions such as RF power, working pressure and process time were controlled. In results, the surface roughness showed $15.53\;{\AA}$ when RF power was 100 W, working pressure was 50 mTorr and process time was 10 min. Also, we tried to deposit ZnO thin films on the each Al thin films, the upper conditions showed the best crystalline characteristics by x-ray diffraction.

• Journal of the Korean Physical Society
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• v.73 no.11
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• pp.1712-1715
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• 2018

To study the applications for ferroelectric non-volatile memory and ferroelectric memristor, etc., deposition pressure dependent electric the properties of $(Hf,\;Zr)O_2$ thin films by RF sputtering deposition method were investigated. The bottom electrode was TiN thin film to produce stress effect on the formation of orthorhombic phase and top electrode was Pt thin film by DC sputtering deposition. Deposition pressure was varied along with the same other deposition conditions, for example, sputtering power, target to substrate distance, post-annealing temperature, annealing gas, annealing time, etc. The structural and electric properties of the above thin films were investigated. As a result, it is confirmed that the electric properties of the $(Hf,\;Zr)O_2$ thin films depend on the deposition pressure which affects structural properties of the thin films, such as, structural phase, ratio of the constituents, etc.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2004.11a
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• pp.85-87
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• 2004

We fabricated flexible thermoradiotherapy probes to alternated combination with Interstitial hyperthermia and Brachyradiotherapy thermoradiotherapy probe was coated by gold plate on polyethylene brachytherapy probe. When Agar phantom was heated 15 minute with 30 W radiofrequency power, temperature increased as 5oC for polyethylene probe and 20oC for gold coated polyethylene probe. We observed that the 1 cm square array would heat a volume with a 1.25 cm radius circular field cross section to therapeutic temperatures (90% relative SAR using Tm) and the 2 cm square array with a 1.75 cm radius rectangular field with central inhomogeneity. With 2 cm long electrode implants, we observed that the 1 cm square array would heat a 3 cm long sagittal section to therapeutic temperature (90% relative SAR using Tm). The histopathological changes associated with RF heating of normal canine brains have been correlated with thermal distributions. RF needle electrode heating was applied for 50 min to generate tissue temperatures of 43${\circ}$C. We obtained a quarter of the heated tissue material immediately after heating and sacrificed at intervals from 7${\sim}$30 days. The acute stage was demonstrated by liquefactive necrosis, pyknosis of neuronal element in the gray matter. Mild gliosis occurring around the necrosis was demonstrated in the last sacrificed (days30)canine brain.