• 한국표면공학회지
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• 제29권6호
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• pp.739-744
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• 1996

Lanthanide diphthalocyanines have interesting properties on electrochemical and chemical redox reactions. It is however, difficult to use because of thier short device life. Plasma-polymerization attends to improvement thier device life. Yb-diphthalocyanine ($YbPc_2$) polymer film was deposited in a parallel plate electrodes-type RF plasma reactor. $YbPc_2$ was sublimed into the argon plasma, and polymer film was obtained on a substrate. Radio frequency was constant of 13.56MHz. Pressure of argon gas, sublimation rate of $YbPc_2$ and RF power were variable parameters depending on film quality. Surface of polymer films include a lot of sub-micron order lumps. It was indicated that size of lumps depends on polymerization degree controled by parameters. Size of lumps and polymerization degree are increased with RF power. However, by the high RF power over 40W, polymerization degree is decreased with RF power and surface of film is rough. In condition of RF power is high, polymerization will compete with etching of film. We obtained good films for electrochromic display with RF power of 20W, argon gas pressure of 8.0 Pa and sublimationrate of $1.2 \times 10$ mol/min, and good films for gas sensor with RF power of 30W, argon gas pressure of 10.6Pa and sublimation rate of $1.2 \times 10$ mol/min.

• 전기전자학회논문지
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• 제12권1호
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• pp.27-33
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• 2008

The demand of wireless communication is increased rapidly due to the development of wireless communication systems, and many people have the great interest about the "RF system". The trend of the RF audio system is to design the system with less power consumption. In this paper, we explain the Software Algorithm Design of RF systems that is suitable for low power consumption.

• ETRI Journal
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• 제25권3호
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• pp.195-202
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• 2003

This paper proposes a new LDMOSFET structure with a trenched sinker for high-power RF amplifiers. Using a low-temperature, deep-trench technology, we succeeded in drastically shrinking the sinker area to one-third the size of the conventional diffusion-type structure. The RF performance of the proposed device with a channel width of 5 mm showed a small signal gain of 16.5 dB and a maximum peak power of 32 dBm with a power-added efficiency of 25% at 2 GHz. Furthermore, the trench sinker, which was applied to the guard ring to suppress coupling between inductors, showed an excellent blocking performance below -40 dB at a frequency of up to 20 GHz. These results confirm that the proposed trenched sinker should be an effective technology both as a compact sinker for RF power devices and as a guard ring against coupling.

• 산업기술연구
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• 제29권B호
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• pp.145-149
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• 2009

A RF-DC converter is one of the most important components for a wireless power transmission. It has been developed for many applications such as space solar power system, and Radio Frequency Identification(RFID). In this paper, we designed three types of RF-DC converter and compare the performance of each. All types RF-DC convertoer have a maximum conversion efficiency at input power level of 0 dBm~5 dBm and RF-DC converter of third type was the best performance that has a 21.9% of conversion efficiency.

• 반도체디스플레이기술학회지
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• 제20권2호
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• pp.29-33
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• 2021

A 5.8-GHz 1W wireless power transmission system was used for charging a smart phone. The voltage of one RF power receiver with antenna was not enough for charging. Several power receivers for charging a smart phone was connected serially. The voltage of several RF power receivers are highly enough for charging a smart phone within 50cm. However, the lack of current from small capacitances of RF-DC converters is not suitable for charging smart phone. It means very long charging time. In this paper, the voltage multiplier circuits for RF-DC converters were analyzed to increase the current and voltage at the same time to reduce the charging time in smartphone RF wireless charging. Through the analysis of multiplier circuits, the 7-stage parallel multiplier circuit with voltage-doubler units are suitable for charging the smartphone, which supplies 5V and 700mA at 3V@5.8GHz.

• 한국통신학회논문지
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• 제41권11호
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• pp.1574-1579
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• 2016

본 논문은 무인항공기 비행시간 향상을 위해 RF 무선 전력 획득 기술을 이용한 self-powered 센서 노드 회로에 관해 설계 연구하였다. 제안하는 센서 노드는 두 가지 경우가 만족하였을 때 동작한다. 마스터 노드의 입력 RF ID와 센서 노드의 ID가 같을 경우와 RF 무선 전력 획득 시스템이 히스테리시스 스위치에 의해 동작될 때다. 마스터 노드의 출력은 263 MHz에서 26 dBm을 사용하였다. RF 전력을 DC 전력으로 변환하는 최대 효율은 마스터 노드에서 2미터 떨어진 지점(4-6 dBm)에서 55 %이다. 최대 RF 무선 전력 획득 범위는 마스터 노드와 센서 노드의 거리가 약 13 m 이다. 센서 노드의 MCU 및 수신기와 온도 센서와 같은 부하의 소비 전력은 10 msec 동안 5.0 V에서 평균 15 mA이다.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1991년도 한국자동제어학술회의논문집(국제학술편); KOEX, Seoul; 22-24 Oct. 1991
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• pp.1920-1923
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• 1991

An online RF power measurement is needed for the full-bridged MOS-FET RF power inverter because the output current and/or voltage waveform is other than sinusoidal. In order to satisfy the requirement, the online measurement of the output power of this type of RF power inverter by the use of the PC-98 personal computer has been presented. The current and voltage waveforms are sensed by the digital oscilloscope probes so as to obtain the instantaeous power and they are entered into the PC98 personal computer so as to average the instantaneous powers. The RF power of up to 1 kw at 1 MHz measured for the power inverter at the output transformer. This method was confirmed to be applied to evaluate the load resistance change with temperature.

• 반도체디스플레이기술학회지
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• 제12권1호
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• pp.41-45
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• 2013

IGZO transparent conductive thin films were widely used as transparent electrode of optoelectronic devices. We have studied the optical and electrical properties of IGZO thin films. The IGZO thin films were deposited on the corning 1737 glass by RF magnetron sputtering method. The RF power in sputtering process was varied as 25, 50, 75and 100 W, respectively. All of the thin films transmittance in the visible range was above 85%. XRD analysis showed that amorphous structure of the thin films without any peak. The thin films were electrically characterized by high mobility above $13.4cm^2/V{\cdot}s$, $7.0{\times}10^{19}cm^{-3}$ high carrier concentration and $6{\times}10^{-3}{\Omega}-cm$ low resistivity. By the studies we found that IGZO transparent thin film can be used as transparent electrodes in electronic devices.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1915-1917
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• 2004

Inductively coupled plasma is commonly used for electrodeless lamp due to its ease of plasma generation. Optical characteristics significantly depend on the RF power and gas pressure of the plasma. This paper describes the measurement of luminance as a function of RF power and gas pressure with a goal of finding optimal operating conditions of the electrodeless lamp. The gas pressure was varied from 10 [mTorr] to 500 [mTorr] and the RF power was varied from 10 [W] to 200 [W]. It was found that the luminance tends to be decreased when argon pressure is increased, and the luminance is increased as RF power is increased. It was also found that the luminance per unit RF power is high when the argon pressure is low and when the RF power is in the range of 30 [W]${\sim}$40 [W].

• 한국재료학회지
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• 제22권10호
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• pp.508-512
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• 2012

ZnO thin films were grown on a sapphire substrate by RF magnetron sputtering. The characteristics of the thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL), and Hall effect. The substrate temperature and growth time were kept constant at $200^{\circ}C$ at 30 minutes, respectively. The RF power was varied within the range of 200 to 500 W. ZnO thin films on sapphire substrate were grown with a preferred C-axis orientation along the (0002) plan; X-ray diffraction peak shifted to low angles and PL emission peak was red-shifted with increasing RF power. In addition, the electrical characteristics of the carrier density and mobility decreased and the resistivity increased. In the electrical and optical properties of ZnO thin films under variation of RF power, the crystallinity improved and the roughness increased with increasing RF power due to decreased oxygen vacancies and the presence of excess zinc above the optimal range of RF power. Consequently, the crystallinity of the ZnO thin films grown on sapphire substrate was improved with RF sputtering power; however, excess Zn resulted because of the structural, electrical, and optical properties of the ZnO thin films. Thus, excess RF power will act as a factor that degrades the device characteristics.