• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.460-463
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• 2005

Gear is an important machine element to be used transmission in case short between axis. We drew gear using automatic design program to solve problem when it draw gear. We manufactured gears that it have different pressure angles using W-EDM. And we got a 2D profile of manufactured gear using reverse engineering. So we got to manufacturing error in comparison with CAD data and measured data. In result we could manufacture precise gear through improvement of manufacturing processes.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.381-382
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• 2009

• Journal of the Korean Society for Precision Engineering
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• v.19 no.6
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• pp.62-69
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• 2002

For improving the motion accuracy of hydrostatic table, corrective machining algorithm is proposed in this paper. The algorithm consists of three main processes. reverse analysis is performed firstly to estimate rail profile from measured linear and angular motion error, in the algorithm. For the next step, corrective machining information is decided as referring to the estimating rail profile. Finally, motion errors on correctively machined rail are analized by using motion error analysis method proposed in the previous paper. These processes can be iterated until the analized motion errors are satisfied with target accuracy. In order to verify the validity of the algorithm theoretically, motion errors by the estimated rail, after corrective machining, are compared with motion errors by true rail assumed as the measured value. Estimated motion errors show good agreement with assumed values, and it is confirmed that the algorithm is effective to acquire the corrective machining information to improve the accuracy of hydrostatic table.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.23 no.7 s.166
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• pp.1129-1138
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• 1999

[$Moir\acute{e}$] technique is now being extensively investigated as a fast non-contact means of three-dimensional profile measurement especially for reverse engineering. One problem with $moir\acute{e}$ technique is so called $2\pi$-ambiguity problem that limits the maximum step height difference between two neighboring sampling points to be less than half the equivalent wavelength of $moir\acute{e}$ fringes. In this investigation, a new two-wavelength scheme of projection $moir\acute{e}$ topography is proposed and tested to cope with the $2\pi$-ambiguity problem. Experimental results are discussed to assess the new method in measuring large objects with high step discontinuities.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.15 no.6
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• pp.76-81
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• 2006

In this paper, profile error measurement method of a turbine blade using 3D-scanner is developed. The method begins with scanning the upper and lower sides of the blade on which three small balls are attached, and constructs a solid measurement model by registering the two scanned surfaces. Airfoils are derived from the model at each interval by intersecting it with a plane, and arranged with design airfoils. The $2^2$ factorial design search method is engaged in arranging the two airfoils, from which the main blade parameters including the edge radius are computed. The developed measurement technique is applied to practical blade manufacturing and validates its effectiveness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STD structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters. we studied the correlation between CMP thickness of STI using high selectivity slurry. DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased. the N-poly foot is deteriorated. and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point,, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by $100\AA$. 3.2 $u\AA$ of IDSN is getting better in base 1 condition. In POE 50% condition. 1.7 $u\AA$ is improved. and 0.7 $u\AA$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STI) structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters, we studied the correlation between CMP thickness of STI using high selectivity slurry, DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased, the N-poly foot is deteriorated, and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by 100 ${\AA}$, 3.2 u${\AA}$ of IDSN is getting better in base 1 condition. In POE 50% condition, 1.7 u${\AA}$ is improved, and 0.7 u${\AA}$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• Journal of the Korean Society for Nondestructive Testing
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• v.25 no.1
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• pp.9-14
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• 2005

The angular dependence(profile) of backward radiated ultrasound was measured for glass specimens with random surface roughness using ultrasonic goniometer that ran changes the incident angle continuously. It was concluded that the roughened region had greater acoustic impedance than the unperturbed region. The comparison of backward radiations showed that the amplitude of peak and the area of radiation profile were increased with surface roughness. It was suggested from the sensitive dependence of the profile area that the profile of backward radiation could be applied to in the nondestructive evaluation of sulfate region. Inclined C-scan technique with the transducer inclined at Rayleigh angle showed the reverse of luminosity and the high signal to noise ratio so that it provided high resolution.

• 한국지구물리탐사학회:학술대회논문집
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• 2008.10a
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• pp.149-154
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• 2008

We analyzed the Coulomb stress transfer near a small-scale reverse fault. For the modeling we used the geometry of a Quaternary fault in Gyeongju area, Eupcheon fault. For an assumed reverse faulting slip of 10cm, the resulting values of the Coulomb stress change are relatively higher (>2 bar) near the edges (both downward and lateral) of the fault, and diminish slightly upward and downward. The equivalents are negative in the zone immediately below and above the fault, exhibiting a "T" shape of low stress zone in the vertical profile of the fault. This study demonstrates the possible ranges and directions the aftershock energy would propagates after a reverse faulting.

• Toxicological Research
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• v.35 no.3
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• pp.215-224
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• 2019

As various populations are rapidly becoming an aging society worldwide and interest in health issues has increased, demand for functional foods including herbal products has increased markedly to maintain a healthy state which has led to safety issues about their intake as an inevitable result. The objective of this study was to identify the safety profile of a Korean red ginseng and Salvia plebeia R. Br. extract mixture (KGC-03-PS) which is a valuable ingredient that can be used as a functional food. In the present study, the subacute oral toxicity and bacterial reverse mutagenicity of KGC-03-PS were evaluated. Sprague Dawley rats were administered KGC-03-PS orally for 28 days by gavage. Daily KGC-03-PS dose concentrations were 0, 500, 1,000, or 2,000 mg/kg body weight (bw) per day. Bacterial reverse mutation test with KGC-03-PS dose levels ranging from 312.5 to $5,000{\mu}g/plate$ was carried out by OECD test guideline No. 471. Five bacterial strains (Salmonella typhimurium TA98, TA100, TA1535, TA1537, and Escherichia coli WP2) were tested in the presence or absence of metabolic activation by plate incorporation method. There were no toxicological effects related with test substance in the clinical evaluation of subacute oral toxicity test including clinical signs, body weight, and food consumption. Moreover, no toxicological changes related to KGC-03-PS were observed in the hematological and serum biochemical characteristics as well as in the pathological examinations, which included organ weight measurements and in the gross- or histopathological findings. KGC-03-PS did not induce an increase in the number of revertant colonies in all bacterial strains of the bacterial reverse mutation test. The no-observed-adverse-effect level of KGC-03-PS is greater than 2,000 mg/kg bw/day, and KGC-03-PS did not induce genotoxicity related to bacterial reverse mutations under the conditions used in this study.