• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.117-123
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• 2014

The fabrication and characterization of a Si/ZnO thin film heterojunction ultraviolet photodiode has been presented in this paper. ZnO thin film of ~100 nm thick was deposited on <100> Silicon (Si) wafer by atomic layer deposition (ALD) technique. The Photoluminescence spectroscopy confirms that as-deposited ZnO thin film has excellent visible-blind UV response with almost no defects in the visible region. The room temperature current-voltage characteristics of the n-ZnO thin film/p-Si photodiodes are measured under an UV illumination of $650{\mu}W$ at 365 nm in the applied voltage range of ${\pm}2V$. The current-voltage characteristics demonstrate an excellent UV photoresponse of the device in its reverse bias operation with a contrast ratio of ~ 1115 and responsivity of ~0.075 A/W at 2 V reverse bias voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.149-152
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• 2000

AC impedance measurements on poly-p-phenylenevinylene (PPV) LEDs in the frequency range between 10 Hz and 10$\^$6/ Hz were carried out. The complex-plane impedance spectra indicate that PPV devices can be represented by equivalent circuits that corresponds to the bulk and interfacial regions at high and low frequencies, respectively. As a result of complex impedance analysis through the separation of bulk and interfacial region impedances, increase of forward bias in Al/PPV/ITO devices gave rise to relative decrease of the interfacial region impedance. Above the electric field of 10$\^$6/ V/cm the PPV device showed a space charge limited current (SCLC) conduction. The dependence of the transport mechanism and dielectric properties on the applied bias voltage is discussed.

• Communications for Statistical Applications and Methods
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• v.18 no.4
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• pp.537-548
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• 2011

In this paper following Singh et al. (2008), we propose a modified ratio-product type exponential estimator to estimate the finite population mean $\={Y}$ of the study variable y in presence of non-response in different situations viz. (i) population mean $\={X}$ is known, and (ii) population mean $\={X}$ is unknown. The expressions of biases and mean squared error of the proposed estimators have been obtained under large sample approximation using single as well as double sampling. Some realistic conditions have been obtained under which the proposed estimator is more efficient than usual unbiased estimators, ratio estimators, product estimators and exponential ratio and product estimators reported by Rao (1986) and Singh et al. (2010) are found to be more efficient in many situations.

• Proceedings of the Korean Association for Survey Research Conference
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• 2005.12a
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• pp.169-183
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• 2005

This paper considers formation of nonresponse weighting adjustment cell for handling unit nonresponse in sample surveys. We propose a multivariate regression tree mehtod for segmentation using the variable of interest and the estimated response probability simultaneously to construct effective nonresponse adjustment cell. One is using only response data and the other is using response and nonresponse data. These two cases are compared in terms of bias.

• The Korean Journal of Applied Statistics
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• v.25 no.4
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• pp.681-695
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• 2012

In this paper, a family of estimators for the finite population variance investigated by Srivastava and Jhajj (1980) is studied under two different situations of random non-response considered by Tracy and Osahan (1994). Asymptotic expressions for the biases and mean squared errors of members of the proposed family are obtained; in addition, an asymptotic optimum estimator(AOE) is also identified. Estimators suggested by Singh and Joarder (1998) are shown to be members of the proposed family. A correction to the Singh and Joarder (1998) results is also presented.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.954-957
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• 2007

We analyzed conditions for fabricating zero-bias polymer-stabilized liquid crystal (PSLC) pi cells. A high curing voltage and a very low curing intensity are effective in fabricating the cell with a high bright state, a low dark state and therefore a steep T-V curve. However, the response time of the cell is slow. Finally, a dual-frequency PSLC pi cell with fast response time is developed. The obtained result reveals that the dual-frequency PSLC pi cell has a fast response of under 1ms.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.278-278
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• 2010

Electrically tunable photonic band gap (PBG) materials based on crystalline structures have been developed for active components of display. Despite considerable advances, the intrinsic drawbacks of the crystalline PBG materials such as the strong angle dependent hue and difficulty of fabricating defect-free structures in large area have yet to be addressed for their practical applications. Here we report quasi-amorphous colloidal structures exhibiting angle-independent photonic colors in response to the electric stimuli. Moderately polydisperse colloidal Fe3O4@SiO2 nanoparticles dispersed in organic solvents exclusively form quasi-amorphous photonic materials at sufficiently high concentrations (> 30 wt%), and which reversibly reflect incident light in visible region ($\lambda$ peak = 490~655 nm) in response to the relatively low bias voltage (0~4 V). We show the angle-independent tunable photonic colors with the fast response time (50~170 ms) due to the isotropic nature of quasi-amorphous structures. Conventional vacuum injection technique is applicable for fabricating flexible full color photonic display pixels with various pre-defined shapes.

• Nuclear Engineering and Technology
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• v.51 no.3
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• pp.731-737
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• 2019

In this study, a new measurement method based on voltage transients in CdZnTe detectors response to low energy photon irradiations is applied to measure the electron mobility (${\mu}_e$) and electron mobility-lifetime product $({\mu}{\tau})_e$ in a CdZnTe detector. In the proposed method, the pulse rise times are derived from low energy photon response to 59.5 keV($^{241}Am$), 88 keV($^{109}Cd$) and 122 keV($^{57}Co$) ${\gamma}-rays$ for the irradiation of the cathode surface at each detector for different bias voltages. The electron $({\mu}{\tau})_e$ product was then determined by measuring the variation in the photopeak amplitude as a function of bias voltage at a given photon energy using a pulse-height analyzer. The $({\mu}{\tau})_e$ values were found to be $(9.6{\pm}1.4){\times}10^{-3}cm^2V^{-1}$ for $1000mm^3$, $(8.4{\pm}1.6){\times}10^{-3}cm^2V^{-1}$ for $1687.5mm^3$ and $(7.6{\pm}1.1){\times}10^{-3}cm^2V^{-1}$ for $2250mm^3$ CdZnTe detectors. Those results were then compared with the literature $({\mu}{\tau})_e$ values for CdZnTe detectors. The present results indicate that, the electron mobility ${\mu}_e$ and electron $({\mu}{\tau})_e$ values in CdZnTe detectors can be measured easily by applying voltage transients response to low energy photons, utilizing a fast signal acquisition and data reduction and evaluation.

• Survey Research
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• v.4 no.2
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• pp.63-86
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• 2003

The objective of this study was to investigate the existence of starting point bias in the bidding game contingent valuation elicitation technique when determining willingness to pay (WTP) for improving the qualify of running water in Seoul and its vicinity. Of all existing contingent techniques, the bidding game most closely mimics the normal price taking behavior in local markets. Three different starting points (low, medium and high) were used to determine WTP and the existence of starting point bias in the meanwhile respectively. The respondents were randomly assigned to the three different starting point groups in order to ensure homogeneity, so that any variation seen in WTP could be attributed to the starting point effects. And a pretested interviewer-administered questionnaire used to elicit WTP. Non-parametric test and the logit model were used to analyze the data for evidence of starting point bias. In this instance, the high starting point group had a high WTP, and low starting point group had a low WTP. This means there exist starting point bias in estimating WTP by bidding game in this instance. This finding might signal that people may actually be making up their minds on the maximum amount they are willing to pay for running water service as a bidding iterating is going on and is influenced by the starting point used in the bidding game. The problem of slaking point bias can be avoided if the respondent is asked directly for the maximum WTP without payment cards or a bidding game. But such a question is perceived as being very difficult to answer and this leads to problems of non-response and being unrealistic.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.12
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• pp.15-19
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• 2016

The gate bias dependence of kink phenomenon with a large deviation from the resistance circle in Smith chart is observed in the frequency response of $S_{11}$-parameter for large multi-finger RF MOSFETs. For the first time, this bias dependence is analyzed by measuring magnitude and phase of $S_{11}$-parameter, input resistance and input capacitance. As a result, $V_{gs}$ dependent $S_{11}$-parameter is largely changed by the magnitude of input capacitance as well as dominant pole and zero frequencies of input resistance. At $V_{gs}=0V$, the kink phenomenon occurs in the high frequency region because of very small phase difference of $S_{11}$-parameter and high pole frequency of input resistance. However, the kink phenomenon at higher $V_{gs}$ is generated in the low frequency region owing to large phase difference and low pole frequency.