• ETRI Journal
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• 제29권1호
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• pp.70-78
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• 2007

A new low-voltage CMOS interface circuit with digital output for piezo-resistive transducer is proposed. An input current sensing configuration is used to detect change in piezo-resistance due to applied pressure and to allow low-voltage circuit operation. A simple 1-bit first-order delta-sigma modulator is used to produce an output digital bitstream. The proposed interface circuit is realized in a 0.35 ${\mu}m$ CMOS technology and draws less than 200 ${\mu}A$ from a single 1.5 V power supply voltage. Simulation results show that the circuit can achieve an equivalent output resolution of 9.67 bits with less than 0.23% non-linearity error.

• 한국전기전자재료학회논문지
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• 제35권4호
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• pp.348-352
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• 2022

Resistive switching behaviors of a co-sputtered zinc silicate thin film (ZnO and SiO₂ targets) have been investigated. We fabricated an Ag/ZnSiO_x/highly doped n-type Si substrate device by using an RF magnetron sputter system. X-ray diffraction pattern (XRD) indicated that the Zn₂SiO₄ was formed by a post annealing process. A unique morphology was observed by scanning electron microscope (SEM) and atomic force microscope (AFM). As a result of annealing process, 50 nm sized nano clusters were formed spontaneously in 200~300 nm sized grains. The device showed a unipolar resistive switching process. The average value of the ratio of the resistance change between the high resistance state (HRS) and the low resistance state (LRS) was about 106 when the readout voltage (0.5 V) was achieved. Resistance ratio is not degraded during 50 switching cycles. The conduction mechanisms were explained by using Ohmic conduction for the LRS and Schottky emission for the HRS.

• 전기전자학회논문지
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• 제19권4호
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• pp.479-485
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• 2015

A resistance deviation-to-time interval converter based on dual-slope integration using second generation current conveyors (CCIIs) is designed for connecting resistive bridge sensors with a digital system. It consists of a differential integrator using CCIIs, a voltage comparator, and a digital control logic for controlling four analog switches. Experimental results exhibit that a conversion sensitivity amounts to $15.56{\mu}s/{\Omega}$ over the resistance deviation range of $0-200{\Omega}$ and its linearity error is less than ${\pm}0.02%$. Its temperature stability is less than $220ppm/^{\circ}C$ in the temperature range of $-25-85^{\circ}C$. Power dissipation of the converter is 60.2 mW.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.28.2-28.2
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• 2011

Resistance random access memory (ReRAM) is a promising candidate for next-generation nonvolatile memory because of its advantageous qualities such as simple structure, superior scalability, fast switching speed, low-power operation, and nondestructive readout. We investigated the resistive switching behavior of tantalum oxide that has been widely used in dynamic random access memories (DRAM) in the present semiconductor industry. As a result, it possesses full compatibility with the entrenched complementary metal-oxide-semiconductor processes. According to previous studies, TiN is a good oxygen reservoir. The TiN top electrode possesses the specific properties to control and modulate oxygen ion reproductively, which results in excellent resistive switching characteristics. This study presents fully room temperature fabricated the TiN/$TaO_x$/Pt devices and their electrical properties for nonvolatile memory application. In addition, we investigated the TiN electrode dependence of the electrical properties in $TaO_x$ memory devices. The devices exhibited a low operation voltage of 0.6 V as well as good endurance up to $10^5$ cycles. Moreover, the benefits of high devise yield multilevel storage possibility make them promising in the next generation nonvolatile memory applications.

• 대한전자공학회논문지SD
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• 제48권9호
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• pp.31-39
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• 2011

본 논문에서는 Carbon Nanotube(CNT) 센서 어레이를 위한 저 전력, 소 면적의 신호 검출 시스템을 제안한다. 제안된 시스템은 신호 검출회로, 디지털 제어기, UART I/O로 구성된다. 신호 검출회로는 VGA를 공유하는 64개의 transimpedance amplifier(TIA)와 11비트 해상도의 successive approximation register-ADC(SAR-ADC)를 사용하였다. TIA는 센서의 전압 바이어스 및 전류를 증폭하기 위한 active input current mirror(AICM)와 증폭된 전류를 전압으로 변환하는 저항 피드백 방식의 VGA(Variable Gain Amplifier)로 구성되어있다. 이러한 구조는 큰 면적과 많은 전력을 필요로 하는 VGA를 공유하기 때문에 다수의 센서 어레이에 대해 검출 속도의 저하 없이 저 전력, 소 면적으로 신호 검출이 가능하게 한다. SAR-ADC는 저 전력을 위하여 입력 전압 level에 따라 하위 bit의 동작을 생략하는 수정된 알고리즘을 사용하였다. ADC 및 센서의 선택은 UART Protocol 기반의 디지털 제어기에 의해 선택되며, ADC의 data는 UART I/O를 통해 컴퓨터와 같은 단말기를 통해 모니터링 할 수 있다. 신호 검출회로는 0.13${\mu}m$ CMOS 공정으로 설계되었으며 면적은 0.173 $mm^2$이며 640 sample/s의 속도에서 77.06${\mu}W$의 전력을 소모한다. 측정 결과 10nA - 10${\mu}A$의 전류 범위에서 5.3%의 선형성 오차를 가진다. 또한 UART I/O, 디지털 제어기는 0.18${\mu}m$ CMOS 공정을 이용하여 제작하였으며 총면적은 0.251 $mm^2$ 이다.

• Journal of Radiation Protection and Research
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• 제36권1호
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• pp.35-43
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• 2011

The PHENIX Experiment is the largest of the four experiments that have taken data at the Relativistic Heavy Ion Collider. PHENIX, the Pioneering High Energy Nuclear Interaction eXperiment, is designed specifically to measure direct probes of the collisions such as electrons, muons, and photons. The primary goal of PHENIX is to discover and study a new state of matter called the Quark-Gluon Plasma. Among many particles, muons coming from W-boson decay gives us key information to analyze the spin of proton. Resistive plate chambers are proposed as a suitable solution as a muon trigger because of their fast response and good time resolution, flexibility in signal readout, robustness and the relatively low cost of production. The RPC detectors for upgrade were assembled and their performances were evaluated. The procedure to make the detectors better was optimized and described in detail in this thesis. The code based on ROOT was written and by using this the performance of the detectors made was evaluated, and all of the modules for north muon arm met the criteria and installation at PHENIX completed in November 2009. As RPC detectors that we made showed fast response, capacity of covering wide area with a resonable price and good spatial resolution, this will give the opportunity for applications, such as diagnosis and customs inspection system.

• 한국통신학회논문지
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• 제39C권1호
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• pp.82-89
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• 2014

최근 M2M/IoT에 대한 관심이 높아지면서 디바이스의 위치와 자세 등을 인식할 수 있는 동작 인식 센서의 필요성이 대두되고 있다. 본 논문에서는 소형의 디바이스에 적합하도록 저잡음, 저전력, 초소형 6축 관성센서 IC를 구현하였다. 본 논문에서 구현된 IC는 3축의 압전형 자이로 센서와 3축의 압저항형 가속도 센서를 사용하며, 3축의 자이로스코프 감지 회로, 자이로스코프 센서 구동 회로, 3축의 가속도 감지 회로, 16bit sigma-delta ADC, 디지털 필터와 제어 회로로 구성되어 있다. 본 IC은 TSMC $0.18{\mu}m$ mixed signal CMOS공정으로 개발되었으며, STM사의 6축 관성 센서인 LSM330의 소비전류 6.1mA보다는 약 27% 낮은 4.5mA의 소비 전류로 동작한다.