• Journal of rehabilitation welfare engineering & assistive technology
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• v.11 no.3
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• pp.231-238
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• 2017

In this paper, we propose a method of analyzing exercise behavior to increase health care and exercise effect in personal fitness. In this study, a user wears a band-shaped acceleration sensor, an angular velocity sensor, and a motion sensor equipped with a geomagnetic module. Using the technique presented in this paper, we analyzed the motion of three resistive exercises which is consistent with previous studies. We have acquired a technique for processing personalized exercise information from the data generated in the resistive exercise situation.

• ETRI Journal
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• v.29 no.1
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• pp.70-78
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• 2007

A new low-voltage CMOS interface circuit with digital output for piezo-resistive transducer is proposed. An input current sensing configuration is used to detect change in piezo-resistance due to applied pressure and to allow low-voltage circuit operation. A simple 1-bit first-order delta-sigma modulator is used to produce an output digital bitstream. The proposed interface circuit is realized in a 0.35 ${\mu}m$ CMOS technology and draws less than 200 ${\mu}A$ from a single 1.5 V power supply voltage. Simulation results show that the circuit can achieve an equivalent output resolution of 9.67 bits with less than 0.23% non-linearity error.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.255-258
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• 1999

We investigated the current limiting characteristics of resistive and inductive SFCLs with 100 $\Omega$ of quench impedance for a single line-to-ground fault. which accounts for about 70% of the total power line faults, in the 154 kV transmission system. The fault simulation at the phase angles 0$^{\circ}$, 45$^{\circ}$, and 90$^{\circ}$ showed that the resistive SFCL limited the fault current less than 15 kA without any DC component after one half cycle from the instant of the fault. On the other hand, the inductive SFCL suppressed the current below 12 KA, but with 3 kA of DC component which decreased to zero in 5 cycles. We concluded that the inductive SFCL had higher performance in current limiting but the resistive SFCL was better from the view point of DC components.

• Journal of electromagnetic engineering and science
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• v.16 no.2
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• pp.106-111
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• 2016

A resistive and capacitive (RC) microwave absorber with a layer thickness less than a quarter of a wavelength is investigated based on closed-form design equations, which are derived from the equivalent circuit of the RC absorber. The RC absorber is shown to have a theoretical 90% absorption bandwidth of 93% when the electrical layer thickness is $57^{\circ}$ (about ${\lambda}_0/6$). The trade-offs between the layer thickness and the absorption bandwidth are also elucidated. The presented formulation is validated by a design example at 3 GHz. The RC absorber is realized using a silver nanowire resistive rectangular structure with surrounding gaps. The measured 90% absorption bandwidth with a layer thickness of ${\lambda}_0/8$ is 76% from 2.3 GHz to 5.1 GHz in accordance with the theory and EM simulations. The presented design methodology is scalable to other frequencies.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.7 no.4
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• pp.195-199
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• 2014

A bridge resistance deviation-to-period (BRD-to-P) converter is presented for interfacing resistive biosensors. It consists of a linear operational transconductance amplifier (OTA) and a current-controlled oscillator (CCO) formed by a current-tunable Schmitt trigger and an integrator. The free running period of the converter is 1.824 ms when the bridge offset resistance is $1k{\Omega}$. The conversion sensitivity of the converter amounts to $3.814ms/{\Omega}$ over the resistance deviation range of $0-1.2{\Omega}$. The linearity error of the conversion characteristic is less than ${\pm}0.004%$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.710-712
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• 2011

In this study, we fabricate resistive switching random access memory (ReRAM) devices constructed with a Al/$HfO_2$/ITO structure on glass substrates and investigate their memory characteristics. The hafnium oxide thin film used as a resistive switching layer is sputtered at room temperature in a sputtering system with a cooling unit. The Al/$HfO_2$/ITO device exhibits bipolar resistive switching characteristics, and the ratio of the high resistance (HRS) to low resistance states (LRS) is more than 60. In addition, the resistance ratio maintains even after $10^4$ seconds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.209-212
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• 1999

We studied the operating properties of resistive and inductive SFCLS with 100 $\Omega$ of quench impedance for a three-phase-fault in the 154 kV transmission system. The fault simulation at the phase angles 0$^{\circ}$ , 45$^{\circ}$ , and 90$^{\circ}$ showed that the resistive SFCL limited the fault current less than 16 kA without any DC component after one half cycle from the instant of the fault. On the other hand, the inductive SFCL suppressed the current below 11 kA, but with 3-4 kA of DC component which decreased to zero in 5 cycles. We concluded that the inductive SFCL had higher performance in current limiting but the resistive SFCL was better from the view point of DC components.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.142-145
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• 2002

This paper describes an influence of system voltage harmonics on arrester deterioration diagnostic techniques based on leakage current measurement because the resistive current is composed of two components caused by nonlinear characteristics of arrester and by system voltage harmonics. Resistive leakage currents of arresters, which can be evaluated by the third harmonic component of total leakage currents, increase with its deterioration progress. In this paper, we developed a PSpice model for ZnO arrester to simulate the harmonics' effect described above. In simulation, pure sinusoidal voltage and the $3^{rd}$ harmonic voltage are applied to the model, and the leakage current changes are compared. The simulation results showed that the magnitudes of resistive leakage current depend not only on the phase of system voltage harmonics but also on the magnitude of it.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.63.2-63.2
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• 2007

• 한국초전도학회:학술대회논문집
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• 2009.07a
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• pp.125-125
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• 2009