• Journal of IKEEE
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• v.23 no.2
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• pp.636-641
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• 2019

A simple resistance deviation-to-time period converter is proposed for interfacing resistive half-bridge sensors. It consists of two 2nd generation current conveyors(CCIIs). The proposed converter has simpler circuit configuration than the conventional converters using operational amplifiers or operational transconductance amplifiers(OTAs). The proposed converter was simulated using CCII implemented with AD844 IC chips. The simulation results show that the converter has a conversion sensitivity of $0.01934ms/{\Omega}$ over a range of $100-500{\Omega}$ resistance deviations and a linearity error less than ${\pm}0.002%$.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.53-58
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• 2022

One of the most promising emerging technologies for the next generation of nonvolatile memory devices based on resistive switching (RS) is the resistive random-access memory mechanism. To date, RS effects have been found in many transition metal oxides. However, no clear evidence has been reported that ZnO-based resistive transition mechanisms could be associated with strong correlation effects. Here, we investigated N, F-co-doped ZnO (NFZO), which shows bipolar RS. Conducting micro spectroscopic studies on exposed surfaces helps tracking the behavioral change in systematic electronic structural changes during low and high resistance condition of the material. The significant difference in electronic conductivity was observed to attribute to the field-induced oxygen vacancy that causes the metal-insulator Mott transition on the surface. In this study, we showed the strong correlation effects that can be explored and incorporated in the field of multifunctional oxide electrons devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.4
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• pp.348-352
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• 2022

Resistive switching behaviors of a co-sputtered zinc silicate thin film (ZnO and SiO₂ targets) have been investigated. We fabricated an Ag/ZnSiO_x/highly doped n-type Si substrate device by using an RF magnetron sputter system. X-ray diffraction pattern (XRD) indicated that the Zn₂SiO₄ was formed by a post annealing process. A unique morphology was observed by scanning electron microscope (SEM) and atomic force microscope (AFM). As a result of annealing process, 50 nm sized nano clusters were formed spontaneously in 200~300 nm sized grains. The device showed a unipolar resistive switching process. The average value of the ratio of the resistance change between the high resistance state (HRS) and the low resistance state (LRS) was about 106 when the readout voltage (0.5 V) was achieved. Resistance ratio is not degraded during 50 switching cycles. The conduction mechanisms were explained by using Ohmic conduction for the LRS and Schottky emission for the HRS.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.11A
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• pp.883-890
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• 2003

In this paper, Electromagnetic scattering problems by a resistive strip grating with tapered resistivity on a grounded dielectric plane according as strip width and spacing, relative permittivity and thickness of dielectric layers, and incident angles of a electric wave are analyzed by applying the FGMM(Fourier-Galerkin Moment Method) Known as a numerical procedure. The scattered electromagnetic fields are expanded in a series of floguet mode functions. The boundary conditions are applied to obtain the unknown field coefficients and the resistive boundary condition is used for the relationship between the tangential electric field and the electric current density on the strip. The tapered resistivity of resistive strips varies zero resistivity at strip edges. Then the induced surface current density on the resistive strip is expanded in a series of Chebyshev polynomials of the second kind. The numerical results of the geometrically in this paper are compared with those for the existing uniform resistivity and perfectly conducting strip. The numerical results of the normalized reflected power for conductive strips case with zero resistivity in this paper show in good agreement with those of existing paper.

• Journal of Advanced Navigation Technology
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• v.10 no.2
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• pp.152-158
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• 2006

In this paper, electromagnetic scattering problems by a resistive strip grating with zero resistivity at the strip-edges on a grounded 2 dielectric layers according as strip width and spacing, relative permittivity, thickness of dielectric layers, and incident angles of a electric wave are analyzed by applying the FGMM(Fourier-Galerkin Moment Method) known as a numerical procedure. The scattered electromagnetic fields are expanded in a series of floguet mode functions. The boundary conditions are applied to obtain the unknown field coefficients and the resistive boundary condition is used for the relationship between the tangential electric field and the electric current density on the strip. The tapered resistivity of resistive strips varies zero resistivity at strip edges. Then the induced surface current density on the resistive strip is expanded in a series of Chebyshev polynomials of the second kind. The normalized reflected power with zero resistivity in this paper show in good agreement with those of existing paper.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.6 s.348
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• pp.46-52
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• 2006

We report on a high performance 94 GHz MMIC resistive mixer using 70-nm metamorphic high electron mobility transistor (MHEMT) and micro-machined W-band ring coupler. A novel 3-dimensional structure of resistive mixer was proposed in this work, and the ring coupler with the surface micro-machined dielectric-supported air-gap microstrip line (DAMLs) structure was used for high LO-RF isolation. The fabricated mixer showed an excellent LO-RF isolation of -29.3 dB and a low conversion loss of 8.9 dB at 94 GHz. To our knowledge, compared to previously reported W-band mixers, the proposed MHEMT-based resistive mixer using micro-machined ring coupler has shown superior LO-RF isolation as well as similar conversion loss.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.1
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• pp.384-389
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• 2011

This article presents an ultra broadband resistive power divider circuit for smart grid applications. Since the future smart grid system is expected to deploy high speed power line communication, the frequency response of the resitive power divider circuit is naturally of significance. Employing a thin film technology, the resistive power divider was designed, measured, and fabricated. For the circuit design, the conductor-backed coplanar waveguide line was firstly designed and measured. The 3 dB cutoff frequency was 72 GHz and S11 remains <-20 dB upto 70 GHz. The fabricated resistive power divider shows the 3 dB cutoff frequency of 50 GHz. It was experimentally verified that the resistive power divider circuit shows the insertion loss of 6 dB for high-speed input signal (40 Gb/s).

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.66-79
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• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.8 s.111
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• pp.719-724
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• 2006

In this paper, we designed the double conversion down mixer by using Half-LO frequency in 2.3 GHz band. The IF frequency is obtained by supplying two LO frequencies to HEMT in both gate type and resistive type. The proposed mixer uses Half-LO frequency the same way as conventional sub-harmonic mixers. However the proposed one uses fundamental component of Half-LO frequency in first stage instead of using second harmonic components of Half-LO frequency, and the IF frequency is obtained by resistive type mixer in second stage, thereby the proposed mixer can improve linearity in comparison with conventional active mixer. We can verify that the proposed mixer has an conversion loss of 5dBm and IIP3 of 16.25dBm by using 10 dBm Power.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.5
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• pp.268-273
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• 2016

In this study, we observed current-voltage characteristics of the MIM (metal-insulator-metal) structure. The $WO_x$ material was used between metal electrodes as the oxide insulator. The structure of the $Al/WO_x/TiN$ shows bipolar resistive switching and the operating direction of the resistive switching is clockwise, which means set at negative voltage and reset at positive voltage. The set process from HRS (high resistance state) to LRS (low resistance state) occurred at -2.6V. The reset process from LRS to HRS occurred at 2.78V. The on/off current ratio was about 10 and resistive switching was performed for 5 cycles in the endurance characteristics. With consecutive switching cycles, the stable $V_{set}$ and $V_{reset}$ were observed. The electrical transport mechanism of the device was based on the migration of oxygen ions and the current-voltage curve is following (Ohm's Law ${\rightarrow}$ Trap-Controlled Space Charge Limited Current ${\rightarrow}$ Ohm's Law) process in the positive voltage region.