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이지면;백종식;김경국;김동준;김효근;박성주
- 한국진공학회지
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- 제7권4호
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- pp.320-327
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- 1998
원격 플라즈마 화학기상증착법(Remote Plasma Enhanced-Ultrahigh Vacuum Chemical Vapor Deposition)에 의해 활성화된 질소 원자를 사용하여 사파이어 기판의 표면 을 저온에서 질화처리한 후 표면의 화학적 조성을 조사하였다. 질화처리에 의해 주로 표면 에 형성된 물질은 AIN임을 X-선 광전자 분광방법(X-ray photoelectron spectroscopy:XPS) 을 사용하여 확인하였다. 또한 플라즈마의 RF 출력, 반응 온도 및 시간에 따라서 기판의 Al 과 반응한 질소의 상대적인 양과, 표면 형태를 XPS와 AFM(atomic force microscopy)을 사 용하여 조사하였다. 플라즈마에 의해서 질소는 RF출력에 따라 증가한 후 일정하게 됨을 관 찰하였다. 그러나 질화 처리 온도와 시간의 증가에 따른 AIN의 상대적인 양은 비교적 무관 함을 관찰하였다. 또한 Ar스퍼터링을 통한 XPS의 depth profile을 관찰한 결과 질화층은 깊 이에 따라 3개의 다른 층으로 이루어져 있음을 확인하였다.
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Mun, Mu Kyeom;Lee, Won Oh;Park, Jin Woo;Kim, Doo San;Yeom, Geun Young;Kim, Dong Woo
- Applied Science and Convergence Technology
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- 제26권6호
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- pp.164-173
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- 2017
Across the most industry, the demand for nanoparticles is increasing. Therefore, many studies have been carried out to synthesize nanoparticles using various methods. The aim of this paper is to introduce an industry-applicable as well as financially and environmentally effective solution plasma process. The solution plasma process involves fewer chemicals than the traditional kit, and can be used to replace many of the chemical agents employed in previous synthesis of nanoparticles into plasma. In this study, this process is compared to the wet-reaction process that has thus far been widely used in the most industry. Furthermore, the solution plasma process has been classified into four different types (in-solution, out of solution, direct type, and remote type), according to its plasma occurrence position and plasma types. Thus, the source of radicals, nanoparticle synthesis, and modification methods are explained for each design. Lastly, unlike nanoparticles with hydrophilic functional groups that are made inside the solution, a nanoparticle synthesis and modification method to create a hydrophobic functional group is also proposed.
https://doi.org/10.5757/ASCT.2017.26.6.164 인용 PDF KSCI

Park, Jae-Beom;Oh, Jong-Sik;Yeom, Geun-Young
- 한국정보디스플레이학회:학술대회논문집
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- 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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- pp.1500-1503
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- 2009
In this paper, we studied about atmospheric pressure remote plasma ashing of photoresist(PR), by using a modified dielectric barrier discharge(DBD). The effect of various gas combinations such as $N_2/O_2$, $N_2/O_2+SF_6$ on the changes PR ashing rate was investigated as a function of power. The maximum PR ashing rate of 1850 nm/min was achieved at $N_2$ (70 slm)/ $O_2$ (200 sccm) + $SF_6$ (3 slm). We found that as the oxygen and fluorine radical peaks were increased, the ashing rate is increased, too.
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