• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.12-13
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• 1988

• Transactions on Electrical and Electronic Materials
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• v.15 no.2
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• pp.100-102
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• 2014

$Ag(Ta,Nb)O_3$ materials have a perovskite structure with a low loss tangent. These materials have been widely researched for their applications as high-frequency, passive components. Also, $Ag(Ta,Nb)O_3$ materials have weak frequency dispersion with high dielectric permittivity which gives them enormous potential for use in electronic components, including the filters, and embedded capacitors. Therefore, our research will discuss the structural and electrical relaxation properties of $Ag(Ta_{0.8}Nb_{0.2})O_3$ ceramics for device applications. We will investigate using X-ray diffraction to understand their structural properties and will analyze voltage dependent leakage current and timedependent relaxation behavior to understand their material properties.

• The Journal of the Acoustical Society of Korea
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• v.31 no.2
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• pp.100-106
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• 2012

The aim of this work was to reveal the effect of butanoic acid in its dissociated form and undissociated form as a guest molecule on the kinetic parameters in an inclusion reaction with ${\beta}$-cyclodextrin (${\beta}$-CD). Ultrasonic absorption measurements in the frequency range from 0.2 to 45 MHz were carried out for ${\beta}$-CD solutions with butanoic acid at $25^{\circ}C$ by ultrasonic relaxation method. The rate and the equilibrium constants were obtained from the guest concentration dependence of the relaxation frequency, and the standard volume change of the complexation reaction were obtained from the maximum absorption per wavelength. A single relaxational absorption was observed, and the cause of the relaxation was attributed to a perturbation of the chemical equilibrium associated with a complexation reaction between ${\beta}$-CD and butanoic acid. These results were compared with those in solutions containing both ${\beta}$-CD and different guest molecules. It was found that the hydrophobicity of guest molecules played an important role in the formation of the inclusion complex and also that the charge on the carboxylic group had a considerable effect on the kinetic characteristics of the complexation reaction.

• Journal of Korean Biological Nursing Science
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• v.12 no.1
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• pp.8-15
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• 2010

Purpose: The purpose of this study is to investigate the effects of relaxation on stress and blood pressure of the college students induced by a cognitive distress game. Methods: The subjects for this research were 18 individuals whose stress index scores were below 4.0 (Asan city). The 18 subjects were divided into two, 9 students were assigned to the experimental group and the other 9 students to the control group randomly. Survey was used to gather data to recognize general characteristics and the level of stress and blood pressure were measured before and after cognitive distress game and relaxation. The gathered data were analyzed with frequency, $X^2$-test, Wilcoxon signed ranks test and Mann Whitney U test using SPSS 14.0 program. Results: Both level of stress and blood pressure displayed a statistically significant difference pre and post cognitive distress game. Relaxation had a statistically significant effect on level of stress. Relaxation, however, did not have statistically significant effect on blood pressure. Conclusion: The above results suggest that while relaxation was effective in reducing level of stress for college students, and therefore recommendable as a means to deal with stress. However, to investigate the effects on physiological index such as blood pressure, further research is needed.

• Macromolecular Research
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• v.14 no.4
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• pp.416-423
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• 2006

The dynamic mechanical thermal properties of poly(hexamethylene terephthalate) (PHT), poly(1,4-cyclohexylenedimethylene terephthalate) (PCT) and their P(HT-co-CT) random copolymers in the amorphous state were examined as a function of temperature and frequency. All the samples exhibited two main relaxation processes in the plot of tan ${\delta}$ versus temperature: the primary ${\alpha}$-relaxation associated with the glass transition and the secondary ${\beta}$-relaxation attributed to the local segmental motions of mostly cyclohexylene rings for PCT and to cooperative motions of methylene, carboxyl, and phenylene groups for PHT. Both ${\alpha}$- and ${\beta}$-relaxation temperatures increased with increasing CT content. The activation energy of the ${\alpha}$-relaxation increased with increasing CT content, whereas that of the ${\beta}$-relaxation decreased. The sub-glassy secondary ${\beta}$-relaxation processes of PCT and PHT were investigated in terms of the cooperativity of main-chain segmental motions.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1102-1104
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• 1995

This study presents the results of an investigation on the electrical characteristics of $PVF_2$ film, to be regarded as the excellent piezo and pyroelectricity, using dielectric relaxation technique by the variation of temperature and frequency. As one of the results, we confirmed that crystal form with Infrared absorption and XRD was ${\alpha}$ type and its crystalline was 59[%]. Also, the results of observation conformed to Debye theory for frequency variation of relative permitivity and dielectric relaxation. Especially, we confirmed each constant values in comparision with equation related to diffusion behavior of ion, so we obtained that activation energy was computed 17.25[kcal/mole] from the relation curve with frequency and temperature.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.186-188
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• 1988

Relaxation spectra of the linear dielectric constants $\varepsilon=\varepsilon'-j{\varepsilon}"$ have been measured as functions of temperature and frequency for alternating copolymers of vinylidene cyanide (VDCN/VAc, VDCN/VPr, VDCN/VBz and VDCN/St) It is found that the linear dielectric constants e show characteristics of the temperature dependence that the real part have a large peak related to the glass transition point(Tg), and of the frequency dependence that the real port increases with decreasing frequency and the imaginary part increases largely in low frequency range. These phenomena mean Debye-type relaxation due to the micro-Brownian moi ions of non-crystalline seqments.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2166-2172
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• 2007

In this study a low-signal equivalent circuit based on the Double Schottky Barrier model is proposed for ZnO-based varistor. Since pin-lead inductance and stray capacitance are considered in pin-lead type ZnO varistor these inductance and capacitance could be removed from the experimental dielectric data of the varistor. According to the equivalent circuit simulation results the higher the varistor-voltage of varistor sample the capacitance of dielectric layer is larger, and the capacitances of semiconducting layer and depletion layer are smaller, while the parallel resistances of semiconducting layer and depletion layer are more larger values. Spectra of the dielectric loss factor $tan{\delta}$ show 2 peaks in low frequency and high frequency regions respectively. The low-frequency peak is due to the relaxation by deep donors and the high-frequency peak is due to the relaxation by shallow donors. Above results are well consistent with the theoretical mechanism of ZnO varistor.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1267-1268
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• 2007

In this study a low-signal equivalent circuit based on DSB model is proposed for ZnO-based varistor. As a equivalent circuit simulation result dielectric loss factor $tan{\delta}$ shows 2 peaks in low frequency and high frequency regions. The low-frequency peak means the relaxation by deep defects and the high-frequency peak means the relaxation by shallow defects.

• Electrical & Electronic Materials
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• v.8 no.5
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• pp.611-618
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• 1995

The (Sr$_{1-x}$ .Ca$_{x}$)TiO$_{3}$+0.6[mol%]Nb$_{2}$O$_{5}$ (0.05.leq.x.leq.0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[.deg. C] in a reducing atmosphere(N$_{2}$ gas). Metal oxides, CuO, was painted on the both surface of the specimens to diffuse to the grain boundary. They were annealed at 1100 [.deg. C] for 2 hours. The 2nd phase formed by thermal diffusing from the surface lead to a very high apparent dielectric constant. According to increase of the frequency as a functional of temperature, all specimens used in this study showed the dielectric relaxation, and the relaxation frequency was above 106 [Hz], it move to low frequency with increasing resistivity of grain. The specimens showed three kinds of conduction mechanisms in the temperature range 25-125 [.deg. C] as the current increased: the region I below 200 [V/cm] shows the ohmic conduction. The region rt between 200 [V/cm] and 2000 [V/cm] can be explained by the Poole-Frenkel emission theory, and the region III above 2000 [V/cm] is dominated by the tunneling effect.fect.