Dielectric properties of ZnO-based varistor(2)

ZnO 바리스터의 유전특성(2)

In this study a low-signal equivalent circuit based on DSB model is proposed for ZnO-based varistor. As a equivalent circuit simulation result dielectric loss factor $tan{\delta}$ shows 2 peaks in low frequency and high frequency regions. The low-frequency peak means the relaxation by deep defects and the high-frequency peak means the relaxation by shallow defects.