• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.845-847
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• 1999

(Ba, Sr)$TiO_3$[BST] thin films were fabricated on Pt/$TiO_2/SiO_2$/Si substrate by RF sputtering. The structural and dielectric properties of the BST thin films were investigated with the deposition time. Increasing the deposition time from 20 min. to 60 min., second phases were decreased, and EST (111), (100), (200) peaks were increased. The relative dielectric constant and dielectric loss of the EST thin films with the thickness of 3000$\AA$ were 300 and 0.018, respectively at 1[kHz]. The relative dielectric constants was decreased and dielectric losses was increased as increasing the frequency.

• 한국세라믹학회지
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• 제32권5호
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• pp.635-641
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• 1995

The effects of A-site substitution with alkaline-earth ions (Ca, Sr and Ba) on the perovskite-phase formation and dielectric properties for Pb1-xMx(Zn1/3Nb2/3)O3 (0.0 x 0.5)-based relaxors were studied. Considerable improvements in the sinterability and the extent fo perovskite formation were observed with increasing the A-site substitution (x) and sintering temperature. The maximum dielectric permittivity appeared at x=0.1 for Sr and Ba substitutiion, while the relative dielectric permittivity was almost invariant in the case of Ca ion substitution. Curie temperature decreased with increasing relative amount of Sr and Ba ions but was almost invariant in case of Ca ion substitution. With increasing the amount of x, the diffuseness parameter ($\delta$) increased but the maximum dielectric constant decreased, demonstrating an enhanced diffuse phase transition (DPT) in the presence of alkaline-earth cations.

• 한국세라믹학회지
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• 제36권9호
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• pp.915-922
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• 1999

Microwave dielectric properties and far infrared reflectivity spectra of the (Zr0.8Sn0.2)TiO4 ceramics were inves-tigated with the various cooling rate. Dielectric constant was nearly same value while the unloaded Q value was largely affected by cooling rate. The Q.f of 42,140 at 7 GHz was obtained for the specimens with cooling rate of 1$^{\circ}C$/min. The effect of the cooling rate on the change of the ionic the electronic polarization and the intrinsic microwave loss of the specimens were investigated by the infrared reflectivity spectra from 50 to 4000cm-1 which were calculated by Kramers-Kroning analysis and the classical oscillator model. The relative tendency of microwave dielectric properties of the specimens calculated from the relfectivity data were in good agreement with the results by the post resonant method.

• The Korean Journal of Ceramics
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• 제6권4호
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• pp.396-400
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• 2000

Dielectric and piezoelectric properties of Pb$_0.9$La$_0.1$TiO$_3$ ceramics were investigated as a function of grain size. Sintering atmosphere was controlled with changing the kind of atmospheric powder and its amount. It was confirmed that dielectric and piezoelectric of Pb$_0.9$La$_0.1$TiO$_3$ were strongly influenced by the sintering atmosphere. Relative dielectric constant of Pb$_0.9$La$_0.1$TiO$_3$ which was sintered in PbO-deficient atmosphere made by Pb$_0.9$La$_0.1$TiO$_3$ powder, increased with the grain size. However, the dielectric constant of the samples sintered in the PbO-sufficient atmosphere made by PbZrO$_3$ powder was slightly decreased with the grain size. Piezoelectric d$_33$ constant of Pb$_0.9$La$_0.1$TiO$_3$ also showed a different trend, depending on the sintering atmosphere. It was almost constant in the range of grain size of 1.3~2.3 $\mu$m when the samples were sintered in the PbO-sufficient atmosphere, while it intensively decreased with the grain size in the case of the PbO-deficient condition.

• 대한전자공학회논문지
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• 제26권12호
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• pp.1934-1939
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• 1989

The circular microstrip resonator which can be exactly performed with theoretical resonant frequency using the conception of dynamic effective relative dielectric constants is analyzed in this paper. The formula of exact resonant frequency of resonator, in this study, is estabilished by effective resonator dimension and dynamic relative dielectric constant. The measurement of transmission type circular resonator which fabricated by AL2O3 and Epsilam-10 is to prove that the experimental results are more agreed a well with the simulated values by this new method than the simple resonator model.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 추계학술대회 논문집
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• pp.8-11
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• 1988

(1-x-y)Pb($Zn_{1/3}Nb_{2/3})0_3-BaTiO_3PbTiO_3(0.05{\leq}x{\leq}0.20, 0.05{\leq}y{\leq}0.15$) ternary compound ceramics were fabricated by the mixed oxide method. The dielectric properties with temperature and frequency of the specimens were investigated. Relative dielectric constants of the specimens were increased with $BaTiO_3$ contents. Increasing the $BaTiO_3$contents, the variation in the relative dielectric constant with frequency, the temperature coefficient of capacitance (TCC) and the dielectric loss were decreased.

• 한국전기전자재료학회논문지
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• 제23권3호
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• pp.206-210
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• 2010

$BaTiO_3$ dielectric ceramics are widely used to multi-layer ceramic capacitor. The $BaTiO_3$ powder was synthesized at $950^{\circ}C$ by using a solid state reaction and grinded by using a high-energy mill. And then, 2.53 wt% glass frit was added to the synthesized $BaTiO_3$ powders for lowering the sintering temperature. The mixed powders were sintered at various temperatures of $1170^{\circ}C$, $1200^{\circ}C$, $1230^{\circ}C$. Microstructures of the sintered $BaTiO_3$ ceramics were inspected by SEM and crystal structures were analyzed by XRD method. The relative dielectric constant was measured by using a impedance/gain phase analyzer. The synthesized $BaTiO_3$ powder had the tetragonal perovskite structure without secondary phase and the particle size was below 200 nm. The relative densities measured at the samples sintered at the temperature above $1200^{\circ}C$ were about 95%. The relative dielectric constant showed maximum value of 2310, which was measured in the specimen sintered at $1200^{\circ}C$. From these results, we could know that the added glass frit had effects on both lowering the sintering temperature and improving the dielectric property.

• 한국전기전자재료학회논문지
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• 제19권7호
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• pp.667-672
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• 2006

Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT(52/48)) thick films were fabricated by the screen-Printing method on the alumina substrates, and $PbTiO_3$ (PT) Precursor solution, which prepared by sol-gel method, was spin-coated on the PZT(52/48) thick films to obtain a densification. Its structural and electrical properties of the PZT(52/48) thick films with the treatment of PT precursor solution coating were investigated. The particle size of the thick films was increased with increasing the number of coatings and the thickness of the PZT-6 (6: number of coatings) films was about $60{\mu}m$. The relative dielectric constant increased and the dielectric loss decreased with increasing the number of PT sol coatings. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 475 and 2 %, respectively. The remanent polarization, coercive field and breakdown strength of the PZT-6 film were $32.6{\mu}C/cm^2$, 15 kV/cm and 60 kV/cm, respectively.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권9호
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• pp.429-433
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• 2006

PZT(80/0) powder was prepared by a sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The coating and drying procedure was repeated 4 times. And then the PZT(20/80) precusor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5mol/L and the number of coating was varied from 0 to 6. The porosity decreased and the grain size increased with increasing the number of coatings. The thickness of the PZT-6(6: number of coatings) films was about $60{\mu}m$. The relative dielectric constant increased and the dielectric loss decreased with increasing the number of PZT(20/80) sol coatings. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 275 and 3.5%, respectively. The remanent polarization, coercive field and breakdown strength of the PZT-6 film were $19.8{\mu}C/cm^2$, 13.7kV/cm and 130kV/cm, respectively.

• 한국전기전자재료학회논문지
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• 제14권11호
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• pp.879-884
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• 2001

In this paper, the structural and dielectric properties of (Sr$_{l-x}$Ca$_{x}$)TiO$_3$ (0$\leq$x$\leq$0.2) -based grain boundary layer ceramics were investigated by XRD, SEM and HP4194A. The ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 1420~152$0^{\circ}C$ and 4 hours, respectively. The average grain size and the lattice constant were decreased with increasing content of Ca. The average grain size was increased with increase of sintering temperature. The relative density of all specimens was 96~98%. The 2nd Phase formed by the thermal diffusion of CuO from the surface leads to very excellent dielectric properties, that is, $\varepsilon$$_{r}$>50000, tan $\delta$<0.05, $\Delta$C<$\pm$10%. The appropriate Ca content was under 15 ㏖%.s under 15 ㏖%.%.