• 한국광학회지
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• 제28권5호
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• pp.229-235
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• 2017

U형 구조의 SGDBR (Sampled Grating Distributed Bragg Reflector) 레이저 다이오드를 설계하고, 시간 영역 시뮬레이션 방법으로 해석하였다. U형 구조의 SGDBR 레이저 다이오드는 SGDBR, 능동, 수동, TIR (Total Internal Reflection) 거울 영역들로 이루어져 있어서, 각 영역들 간의 결합 손실의 영향을 면밀히 고려하여야 한다. 설계된 U형 SGDBR 레이저 다이오드의 파장 가변범위는 1525 nm에서부터 1570 nm로서 시뮬레이션을 통하여 확인하였다. 설계 튜닝 범위에서 완전한 레이저 다이오드 특성을 얻기 위해서는, 미러 영역에서의 손실은 약 2 dB 이하이고, 능동 및 수동 영역 간 butt 결합에서의 매질 간 굴절률 차이는 0.1 이하를 유지하도록 도파 구조가 설계되어야 한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.77-80
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• 1998

Recently, extending the local broadcasting and increasing lots of informations. The low-loss communication cable is required in proportion as frequency .The reason of transportation loss causes to using the high frequencies like hundreds of MHz or decades of GHz. For the low transportation loss. It is required the developing-technology of foaming and the high foamed insulator with the dielectric ratio of the nearest to 1. Therefor, there is the purpose of developing the insulating materials for the low dielectric ratio. Also it is important to measure the attenuation, which is one of the important parameters.sa the evaluation of transportation characteristic with frequency in the communication cable. In this paper,the result showed that the dielectric ratio(1.4) of the nearest to 1 and low attenuation with high frequency were very related to the transportation and reflection characteristics such as propagation velocity (82.27%). Delay time and voltage standing wave ratio(VSWR).

• 한국세라믹학회지
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• 제29권3호
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• pp.177-182
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• 1992

The effect of heat-treatment temperature on the microwave absorbing properties was investigated in Ni0.8Zn0.2Fe2O4 specimens. The composite specimens were prepared by modling and curing the mixture of prereacted ferrite powder and silicone rubber. The measurement of complex permeability and permittivity was made by the reflection/transmission method. The most sensitive material constants with heat-treatment temperature is the imaginary (loss) component of permeability. The higher the heat-treatment temperature, the greater the magnetic loss. The composite specimens with high magnetic loss exhibited superior microwave absorbing properties. The quantitative estimation of microwave absorbing properties were made by plotting the observed material constants on the calculated solution map of impedance-matching.

• 센서학회지
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• 제14권3호
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• pp.169-179
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• 2005

A multiplexed bend loss type single-mode fiber-optic sensor system was prepared to measure the displacement of several cm of the civil engineering structures such as many bridges, tunnels and various buildings. This bend loss type fiber-optic sensor used the signal difference between two reflection signals due to various bend losses generating at a pair of optical connectors by using OTDR (optical time domain reflectometer) for measuring displacements. And the experiments were conducted for showing the measurement feasibility on the range of 10 cm, and the multiplexing experiments were also performed to measure the displacements of 5 measuring positions of an object by setting these 5 fiber-optic sensors on a single mode fiber simultaneously.

• 한국전기전자재료학회논문지
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• 제16권12S호
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• pp.1237-1241
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• 2003

In this paper, we report a novel RF-MEMS packaging technology with lightweight, small size, and short electric path length. To achieve this goal, we used the ultra thin silicon substrate as a packaging substrate. The via holes lot vortical feed-through were fabricated on the thin silicon wafer by wet chemical processing. Then, via holes were filled and micro-bumps were fabricated by electroplating. The packaged RF device has a reflection loss under 22 〔㏈〕 and a insertion loss of -0.04∼-0.08 〔㏈〕. These measurements show that we could package the RF device without loss and interference by using the vertical feed-through. Specially, with the ultra thin silicon wafer we can realize of a device package that has low-cost, lightweight and small size. Also, we can extend a 3-D packaging structure by stacking assembled thin packages.

• Journal of electromagnetic engineering and science
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• 제12권2호
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• pp.171-175
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• 2012

In this work, a new microstrip-to-substrate integrated waveguide (SIW) transition using the parallel half-mode substrate integrated waveguide (HMSIW) is proposed. The proposed transition consists of three sections : a microstrip, parallel HMSIWs, and an SIW. By inserting the parallel HMSIWs section between the microstrip section and the SIW section, the proposed transition can improve the return loss characteristics of the near cut-off frequency because the HMSIWs section has a lower cut-off frequency than the SIW section (8.6 GHz). The lower cut-off frequency is achieved through gradual electromagnetic field mode changes for a low reflection. The measured return loss is less than 20 dB in the of 9.1~16.28 GHz freqeuncy range for the back-to-back transition. The measured insertion loss is within 1.6 dB for the back-to-back transition. The proposed transition is expected to play an important role in wideband SIW circuits fed by a microstrip.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2000년도 추계학술대회논문집
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• pp.291-300
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• 2000

This paper proposes the new hybrid analysis of vibration in the medium to high frequency ranges including PFA and SEA concept. The core part of this method is the applications of coupling loss factor(CLF) instead of power transmission, reflection coefficients in boundary condition. This method shows very promising compared to the classical PFA for the various damping loss factors and wide ranges of frequencies. Besides this paper presents the applicable method in Power Flow Finite Element Method by forming the joint element matrix with CLF. These hybrid concepts are expected to improve SEA and PFA methods in vibration analysis.

• 한국재료학회지
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• 제9권9호
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• pp.913-918
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• 1999

전자파 차폐특성 측정방법의 일환으로 매질의 전기전도도로부터 차폐효과를 정성적 수준에서 예측하는 연구를 수행하였다. 사용된 시편은 전도성 금속 (Cu, Ni)이 피복된 망사형 차폐재로 두께는 0.1 mm 정도이고, 전기전도도는 6.4$\times$10~2.4$\times$10(sup)5 mhos/m 범위 값을 가졌다. 물질상수와 시편의 두께로 표시되는 반사손실 및 흡수손실의 이론식을 도출하고 상기 시편에 대해 차폐효과를 계산하였다. 전도성 피복재의 경우 주된 차폐기구는 반사손실임을 밝힐 수 있었으며, 전기전도도가 증가함에 따라 차폐효과는 현저히 증가함을 알 수 있었다. 이들 이론치를 임피던스 실측치로부터 계산된 반사손실과 비교한 결과 10 dB 이내의 오차를 보임으로써 제안한 분석방법의 타당성을 입증하였다.

• 한국재료학회지
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• 제13권6호
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• pp.389-393
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• 2003

The effect of antireflection layer on the reduction of optical loss has been investigated in Si photodiodes detecting red light with central wavelength of 670 nm. The theoretical analysis showed minimum reflection loss of 6% for the $SiO_2$thickness of about $1100∼1200\AA$ in the $SiO_2$-Si system with the single antireflection layer and no reflection loss for the X$N_3$N$_4$$SiO_2$thickness of $2000\AA$/$1200\AA$ in the $Si_3$$N_4$$SiO_2$-Si system with double antireflection layer. In our experiments, Si photodiodes with the web-patterned $p^{＋}$-shallow diffusion region were fabricated by bipolar IC process technology and the devices were classified into three kinds according to the structure of $Si_3$$N_4$/$SiO_2$antireflection layer. The fabricated devices showed maximum spectral response in the optical spectrum of 650∼700 nm. The average photocurrents of the devices with the $Si_3$$N_4$$SiO_2$thickness of $1000\AA$/X$SiO\AA$, and $2000\AA$$1800\AA$ under the incident power, of -17 dBm were 3.2 uA, 3.5 uA and 3.1 uA, respectively.

• 한국전자파학회논문지
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• 제13권2호
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• pp.123-129
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• 2002

5-bit 광대역 MMIC(Monolithic Microwave Integrated Circuit) 위상 변위기를 설계 및 제작하였다. 광대역 동작 특성을 위해서 11.25$^{\circ}$, 22.5$^{\circ}$, 45$^{\circ}$, 90$^{\circ}$ bit는 Lange 커플러를 이용한 reflection 형태로 설계되었으며, 180 $^{\circ}$bit 는 Lange 커플러를 사용한 shorted coupled line과 전송선을 $\pi$-network 형태로 만든 구조를 이용하여 구현되었고, Lange 커플러로 인한 전체 회로의 크기가 커지는 것을 막기 위해서 커플러를 크게 구부려 회고의 크기를 작게 하였다. 또한 손실이 작은 PIN 다이오드를 사용하여 각 bit에서 스위치로 사용하였다. 제작된 5-bit 광대역 위상 변위기는 5개의 주요 위상에 대하여 RMS 위상 오차 3.5$^{\circ}$, 최대 삽입손실 12.5 dB, 최대 입.출력 반사 손실 7 dB와 10 dB의 측정결과를 되였다. 제작된 위상 변위기 회로의 크기는 6.5$\times$5.3 $ extrm{mm}^2$ 이다.