• Title/Summary/Keyword: reduced bias

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X-ray Sensitivity of Hybrid-type Sensor based on CaWO4-Selenium for Digital X-ray Imager

  • Park, Ji-Koon;Park, Jang-Yong;Kang, Sang-Sik;Lee, Dong-Gil;Kim, Jae-Hyung;Nam, Sang-Hee
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.4
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    • pp.133-137
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    • 2004
  • The development of digital x-ray detector has been extensively progressed for the application of various medical modalities. In this study, we introduce a new hybrid-type x-ray detector to improve problems of a conventional direct or indirect digital x-ray image technology, which composed of multi-layer structure using a CaWO$_4$ phosphor and amorphous selenium (a-Se) photoconductor. The leakage current of our detector was found to be ∼180 pA/cm$^2$ at 10 V/m, which was significantly reduced than that of a single a-Se detector. The x-ray sensitivity was measured as the value of 4230 pC/cm$^2$/mR at 10 V/m. We found that the parylene thin film between a CaWO$_4$ phosphor and an a-Se layer acts as an insulator to prevent charge injection from indium thin oxide (ITO) electrode into an a-Se layer under applied bias.

Ge thin layer transfer on Si substrate for the photovoltaic applications (Si 기판에서의 광소자 응용을 위한 Ge 박막의 Transfer 기술개발)

  • 안창근;조원주;임기주;오지훈;양종헌;백인복;이성재
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.743-746
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    • 2003
  • We have successfully used hydrophobic direct-wafer bonding, along with H-induced layer splitting of Ge, to transfer 700nm think, single-crystal Ge films to Si substrates. Optical and electrical properties have been also observed on these samples. Triple-junction solar cell structures gown on these Ge/Si heterostructure templates show comparable photoluminescence intensity and minority carrier lifetime to a control structure grown on bulk Ge. When heavily doped p$^{+}$Ge/p$^{+}$Si wafer bonded heterostructures were bonded, ohmic interfacial properties with less than 0.3Ω$\textrm{cm}^2$ specific resistance were observed indicating low loss thermal emission and tunneling processes over and through the potential barrier. Current-voltage (I-V) characteristics in p$^{+}$Ge/pSi structures show rectifying properties for room temperature bonded structures. After annealing at 40$0^{\circ}C$, the potential barrier was reduced and the barrier height no longer blocks current flow under bias. From these observations, interfacial atomic bonding structures of hydrophobically wafer bonded Ge/Si heterostructures are suggested.ested.

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Evaluation of Amplified-based Target Preparation Strategies for Toxicogenomics Study : cDNA versus cRNA

  • Nam, Suk-Woo;Lee, Jung-Young
    • Molecular & Cellular Toxicology
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    • v.1 no.2
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    • pp.92-98
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    • 2005
  • DNA microarray analysis of gene expression in toxicogenomics typically requires relatively large amounts of total RNA. This limits the use of DNA microarray when the sample available is small. To confront this limitation, different methods of linear RNA amplification that generate antisense RNA (aRNA) have been optimized for microarray use. The target preparation strategy using amplified RNA in DNA microarray protocol can be divided into direct-incorporation labeling which resulted in cDNA targets (Cy-dye labeled cDNA from aRNA) and indirect-labeling which resulted in cRNA targets (i.e. Cy-dye labeled aRNA), respectively. However, despite the common use of amplified targets (cDNA or cRNA) from aRNAs, no systemic assessment for the use of amplified targets and bias in terms of hybridization performance has been reported. In this investigation, we have compared the hybridization performance of cRNA targets with cDNA targets from aRNA on a 10 K cDNA microarrays. Under optimized hybridization conditions, we found that 43% of outliers from cDNA technique and 86% from the outlier genes were reproducibly detected by both targets hybridization onto cDNA microarray. This suggests that the cRNA labeling method may have a reduced capacity for detecting the differential gene expression when compared to the cDNA target preparation. However, further validation of this discordant result should be pursued to determine which techniques possesses better accuracy in identifying truly differential genes.

Zirconium Titanate Thin FIlm Prepared by Surface Sol-Gel Process and Effects of Thickness on Dielectric Property

  • Kim, Chy-Hyung;Lee, Moon-Hee
    • Bulletin of the Korean Chemical Society
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    • v.23 no.5
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    • pp.741-744
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    • 2002
  • Single phase of multicomponent oxide ZrTiO4 film could be prepared through surface sol-gel route simply by coating the mixture of 100 mM zirconium butoxide and titanium butoxide on $Pt/Ti/SiO_2Si(100)$ substrate, following pyro lysis at $450^{\circ}C$, and annealing it at 770 $^{\circ}C.$ The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V).The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, ti, was dependent on the frequency. It reached a saturated ti value, $6.9{\AA}$, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO4 pellet-shaped material was 33.7 and very stable with frequency promising as good applicable devices.

Reduced Complexity K-BEST Lattice Decoding Algorithm for MIMO Systems (다중 송수신 안테나 시스템 기반에서 복잡도를 감소시킨 K-BEST 복호화 알고리듬)

  • Lee Sung-Ho;Shin Myeong-Cheol;Jung Sung-Hun;Seo Jeong-Tae;Lee Chung-Yong
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.43 no.3 s.345
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    • pp.95-102
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    • 2006
  • This paper proposes the KB-Fano algorithm which has lower decoding complexity by applying modified Fano-like metric bias to the conventional K-best algorithm. Additionally, an efficient K-best decoding algorithm, named the KR-Fano scheme, is proposed by jointly combining the K-reduction and the KB-Fano schemes. Simulations show that the proposed algerian provides the remarkable improvement from the viewpoints of the BER performance and the decoding complexity as compared to the conventional K-best scheme.

Foreign Income Growth and Analyst Forecast Optimism

  • Cho, Hyejin;Ahn, He-Soung
    • East Asian Journal of Business Economics (EAJBE)
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    • v.7 no.1
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    • pp.17-25
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    • 2019
  • Purpose - The international market provides a growth momentum for firms by allowing them to tap into a new market. Given information asymmetry between firms and financial analysts, firms' international growth can be perceived as a higher business prospect by analysts. This paper explores the possibility of analysts' over-emphasis on foreign income growth in predicting earnings. Research design, data, and methodology - We utilize a sample of U.S. firms to test the relationship between foreign income growth and analysts' forecast optimism. Our sample of publicly listed and traded U.S. firms between 1976 and 2016 consists of 6,120 firm-year observations. Results - Empirical analyses show that firms that show higher international growth in earnings are likely to face forecast inaccuracy by financial analysts. From the perspective of firms, their earnings are less than what analysts forecasted. Contrary to our prediction on the moderating effect of innovative capabilities, optimistic bias is not intensified - rather, it is reduced - when firms have higher innovative capabilities. Conclusions - Our results imply that while analysts favor firms with higher international growth, innovative capability on the international market places additional risks to firms' operation.

Influence of Nitrogen Plasma Treatment on Low Temperature Deposited Silicon Nitride Thin Film for Flexible Display (플렉서블 디스플레이 적용을 위한 저온 실리콘 질화막의 N2 플라즈마 처리 영향)

  • Kim, Seongjong;Kim, Moonkeun;Kwon, Kwang-Ho;Kim, Jong-Kwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.1
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    • pp.39-44
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    • 2014
  • Silicon nitride thin film deposited with Plasma Enhanced Chemical Vapor Deposition was treated by a nitrogen plasma generated by Inductively Coupled Plasma at room temperature. The treatment was investigated by Fourier Transform Infrared Spectroscopy and Atomic Force Microscopy on the surface at various RF source powers at two RF bias powers. The amount of hydrogen was reduced and the surface roughness of the films was decreased remarkably after the plasma treatment. In order to understand the causes, we analyzed the plasma diagnostics by Optical Emission Spectroscopy and Double Langmuir Probe. Based on these analysis results, we show that the nitrogen plasma treatment was effective in the improving of the properties silicon nitride thin film for flexible display.

Hamstring Foam Roller release and Sole Self Myofascial Release for Improving Hamstring Muscles Flexibility in Participants with Hamstring Shortness

  • Kim, Geun-Woo;Lee, Ji-Hyun
    • Journal of the Korean Society of Physical Medicine
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    • v.15 no.4
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    • pp.1-9
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    • 2020
  • PURPOSE: The current generation has shortened hamstrings due to a sedentary lifestyle, resulting in reduced flexibility of the hamstring and dysfunction. This study was undertaken to compare effects of three different release exercises on hamstring flexibility, in participants with short hamstrings. METHODS: Totally, 20 subjects having short hamstrings were involved in this study. The inclusion criterion for study participation was active knee extension test (AKET) less than 60°. All participants were subjected to 3 methods: hamstring foam roller release (HFRR), sitting self myofascial release (sitting SMR), and standing self myofascial release (Standing SMR). All participants randomly performed all three methods to avoid bias caused by learning or fatigue. Passive knee extension test (PKET), AKET, finger to floor distance test (FTFT), and pelvic tilting angle test (PTAT) were measured pre- and post-exercises. RESULTS: The PKET, AKET and FTFT were significantly increased after HFRR, sitting SMR, and standing SMR exercise (p < .05). However, PTAT was not significantly increased after the three exercises (p > .05). Furthermore, no significant differences were observed between PKET, AKET, FTFT and PTAT subsequent to HFRR, sitting SMR, and standing SMR (p > .05). CONCLUSION: Our results indicate that HFRR, sitting SMR and standing SMR were immediately effective in improving hamstring flexibility in participants with short hamstrings.

Estimation of Cut-off Stratum in the Highly Skewed Population (왜도가 심한 모집단의 절사층 추정)

  • 한근식
    • Survey Research
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    • v.5 no.1
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    • pp.93-101
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    • 2004
  • In business survey, cut-off sampling is usual, The contribution from cut-off part of the population is at least small in comparison with the remaining population. In this case, part of the target population is excluded from the selection and parameter estimations are only based on Take-all and Take-some stratum. It may be tempting not to use resources on enterprises that contribute little to the overall results of the survey. And this reduces the response burden for these small enterprises. But, the size of cut-off stratum has been increased as a way to manage reduced budgets. This leads to additional bias. In this study, the population have been separated as three stratum, cut -off, take-some, take-all, and we will estimate cut-off part using auxiliary variable.

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Improved Margin of Absorber Pattern Sidewall Angle Using Phase Shifting Extreme Ultraviolet Mask (위상변위 극자외선 마스크의 흡수체 패턴의 기울기에 대한 오차허용도 향상)

  • Jang, Yong Ju;Kim, Jung Sik;Hong, Seongchul;Ahn, Jinho
    • Journal of the Semiconductor & Display Technology
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    • v.15 no.2
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    • pp.32-37
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    • 2016
  • Sidewall angle (SWA) of an absorber stack in extreme ultraviolet lithography mask is considered to be $90^{\circ}$ ideally, however, it is difficult to obtain $90^{\circ}$ SWA because absorber profile is changed by complicated etching process. As the imaging performance of the mask can be varied with this SWA of the absorber stack, more complicated optical proximity correction is required to compensate for the variation of imaging performance. In this study, phase shift mask (PSM) is suggested to reduce the variation of imaging performance due to SWA change by modifying mask material and structure. Variations of imaging performance and lithography process margin depending on SWA were evaluated through aerial image and developed resist simulations to confirm the advantages of PSM over the binary intensity mask (BIM). The results show that the variations of normalized image log slope and critical dimension bias depending on SWA are reduced with PSM compared to BIM. Process margin for exposure dose and focus was also improved with PSM.