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http://dx.doi.org/10.4313/JKEM.2014.27.1.39

Influence of Nitrogen Plasma Treatment on Low Temperature Deposited Silicon Nitride Thin Film for Flexible Display  

Kim, Seongjong (Department of Control and Instrumentation Engineering, Korea University)
Kim, Moonkeun (Department of Control and Instrumentation Engineering, Korea University)
Kwon, Kwang-Ho (Department of Control and Instrumentation Engineering, Korea University)
Kim, Jong-Kwan (Department of Electrical and Electronic Engineering, Anyang University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.27, no.1, 2014 , pp. 39-44 More about this Journal
Abstract
Silicon nitride thin film deposited with Plasma Enhanced Chemical Vapor Deposition was treated by a nitrogen plasma generated by Inductively Coupled Plasma at room temperature. The treatment was investigated by Fourier Transform Infrared Spectroscopy and Atomic Force Microscopy on the surface at various RF source powers at two RF bias powers. The amount of hydrogen was reduced and the surface roughness of the films was decreased remarkably after the plasma treatment. In order to understand the causes, we analyzed the plasma diagnostics by Optical Emission Spectroscopy and Double Langmuir Probe. Based on these analysis results, we show that the nitrogen plasma treatment was effective in the improving of the properties silicon nitride thin film for flexible display.
Keywords
Plasma nitridation; Silicon nitride; Thin film; Low temperature; Flexible display; ICP; PECVD; FT-IR; AFM; OES; DLP;
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