• Title/Summary/Keyword: recrystallization temperature

검색결과 342건 처리시간 0.024초

Microstructure and Mechanical Properties of AA6061/AA5052/AA1050 Alloy Fabricated by Cold Roll-Bonding and Subsequently Annealed

  • Seong-Hee Lee;Sang-Hyeon Jo;Jae-Yeol Jeon
    • 한국재료학회지
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    • 제33권11호
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    • pp.439-446
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    • 2023
  • Changes in the microstructure and mechanical properties of as-roll-bonded AA6061/AA5052/AA1050 three-layered sheet with increasing annealing temperature were investigated in detail. The commercial AA6061, AA5052 and AA1050 sheets with 2 mm thickness were roll-bonded by multi-pass rolling at ambient temperature. The roll-bonded Al sheets were then annealed for 1 h at various temperatures from 200 to 400 ℃. The specimens annealed up to 250 ℃ showed a typical deformation structure where the grains are elongated in the rolling direction in all regions. However, after annealing at 300 ℃, while AA6061 and AA1050 regions still retained the deformation structure, but AA5052 region changed into complete recrystallization. For all the annealed materials, the fraction of high angle grain boundaries was lower than that of low angle grain boundaries. In addition, while the rolling texture of the {110}<112> and {123}<634> components strongly developed in the AA6061 and AA1050 regions, in the AA5052 region the recrystallization texture of the {100}<001> component developed. After annealing at 350 ℃ the recrystallization texture developed in all regions. The as-rolled material exhibited a relatively high tensile strength of 282 MPa and elongation of 18 %. However, the tensile strength decreased and the elongation increased gradually with the increase in annealing temperature. The changes in mechanical properties with increasing annealing temperature were compared with those of other three-layered Al sheets fabricated in previous studies.

High Temperature Deformation Behavior of SiCp/2124Al Metal Matrix Composites

  • Tian, Y.Z.;Cha, Seung I.;Hong, Soon H.
    • 한국복합재료학회:학술대회논문집
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    • 한국복합재료학회 2002년도 춘계학술발표대회 논문집
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    • pp.69-72
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    • 2002
  • The high temperature deformation behavior of SiCp/2124Al composite and 2124Al alloy was investigated by hot compression test in a temperature ranged $400~475^{\circ}C$ over a strain rate ranged $10^{-3}~1s^{-1}$. The billets of 2124Al alloy and SiCp/2124Al composite were fabricated by vacuum hot pressing process. The stress-strain curve during high temperature deformation exhibited a peak stress, and then the flow stress decreased gradually into a steady state stress with increasing the strain. It was found that the flow-softening behavior was attributed to the dynamic recovery, local dynamic recrystallization and dynamic precipitation during the deformation. The precipitation phases were identified as S' and S by TEM diffraction pattern. Base on the TEM inspection, the relationship between the Z-H parameter and subgrain size was found based on the experiment data. The dependence of flow stress on temperature and strain rate could be formulated well by a hyperbolic-sinusoidal relationship using the Zener-Hollomon parameter.

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Effect of Aluminium Content on High Temperature Deformation Behavior of TiAl Intermetallic Compound

  • Han, Chang-Suk
    • 한국재료학회지
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    • 제25권8호
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    • pp.398-402
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    • 2015
  • Fundamental studies of microstructural changes and high temperature deformation of titanium aluminide (TiAl) were conducted from the view point of the effect of Al content in order to develop the manufacturing process of TiAl. Microstructures in an as cast state consisted mainly of lamellar structure irrespective of Al content. By homogenization at 1473 K, the microstructures of Ti-49Al and Ti-51Al were transformed into an equiaxial structure which was composed of ${\gamma}$-TiAl, while the lamellar structure that was observed in Ti-46Al and Ti-47Al was much more stable. We found that the reduction of Al content suppressed the formation of equiaxial grains and resulted in a microstructure of only a lamellar structure. On Ti-49Al and Ti-51Al, dynamic recrystallization occurred during high temperature deformation, and the microstructure was transformed into a fine equiaxial one, while the microstructures of Ti-46Al and Ti-47Al contained few recrystallized grains and consisted mainly of a deformed lamellar structure. We observed that on the low-Al alloys the lamellar structure under hard mode deformation conditions deformed as kink observed B2-NiAl. High temperature deformation characteristics of TiAl were strongly affected by Al content. An increase of Al content resulted in a decrease of peak stress and activation energy for plastic deformation and an increase of the recrystallization ratio in TiAl.

Excimer laser로 재결정화한 LDD구조의 poly-Si TFT 제작 (Fabrication of the LDD Structure poly-Si TFT with Excimer Laser Recrystallization Process)

  • 정준호;박용해
    • 전자공학회논문지A
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    • 제32A권2호
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    • pp.324-331
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    • 1995
  • The leakage current characteristics of the low temperature processed LDD structure poly-Si TFT is analyzed. The excimer laser technology was applied to the recrystallization process of poly-Si film and the maximum processing temperature was retained under 600.deg.C. From the fabricated LDD space 0.3.mu.m to 3$\mu$m, the best on/off current ration could be obtained with the 1.3$\mu$m LDD space. And the threshold voltage did not increase more than 4V over 0.8$\mu$m LDD space. The characteristics of leakage current was compared to non-LDD structure TFT to analyze the mechanism of leakage current. Consequently, it could be concluded that the leakage current is strongly affected by the trap states as well as high electric field between gate and drain.

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GaN 증착용 사파이어 웨이퍼의 표면가공에 따른 압흔 특성 (Surface Lapping Process and Vickers Indentation of Sapphire Wafer for GaN Epitaxy)

  • 신귀수;황성원;김근주
    • 대한기계학회논문집A
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    • 제29권4호
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    • pp.632-638
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    • 2005
  • The surface lapping process on sapphire wafer was carried out for the epitaxial process of thin film growth of GaN semiconducting material. The planarization of the wafers was investigated by the introduction of the dummy wafers. The diamond lapping process causes the surface deformation of dislocation and micro-cracks. The material deformation due to the mechanical stress was analyzed by the X-ray diffraction and the Vickers indentation. The fracture toughness was increased with the increased annealing temperature indicating the recrystallization at the surface of the sapphire wafer The sudden increase at the temperature of $1200^{\circ}C$ was correlated with the surface phase transition of sapphire from a $-A1_{2}O_{3}\;to\;{\beta}-A1_{2}O_{3}$.

304 오스테나이트계 스테인레스강의 고온변형 거동 (High Temperature Deformation Behavior of 304 Stainless Steel)

  • 조상현;김성일;노광섭;유연철
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 1996년도 추계학술대회논문집
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    • pp.139-146
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    • 1996
  • The torsion tests in the range of 900~1100$^{\circ}C$ and 5.0X10-2~5.0X100/sec were performed to study the high temperasture deformation behavior kinetics of 304 stainless steels. The flow curves and microstructures exhibited the characteristic of dynamic recrystallization(DRX). The relationship between the critical strain($\varepsilon$c) for the initiation of dynamic recrystallization and the peak strain($\varepsilon$p) could be expressed as $\varepsilon$c=0.73$\varepsilon$p. The dependence of the flow stress on temperature(T) and stain rate($\varepsilon$) was expressed by hyperbolic sine law, $\varepsilon$=2.75X1014 (sinh 0.076$\sigma$)5.26 exp(-379.55kJ/mol). Under the Zener-Hollomon parameter, Z value of 1013 order, it was found that the grain size was 20${\mu}$m. The relationship between the grain size, dDRX and Z parameter was expressed as dDRX =139.48-7.33 log Z.

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도판트가 주입된 비정질 실리콘 박막의 재결정화에 따른 전기적 성질의 비교 (A Comparison of Electrical Properties by Recrystallization of Dopant-Implanted Amorphous Silicon Films)

  • 이만형;최덕균;김정태
    • 한국표면공학회지
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    • 제26권3호
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    • pp.127-134
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    • 1993
  • P+ and BF2+ were implanted to LPCVD amorphous silicon films deposited on thermally-oxidized silicon wafers and the low temperature annealing process followed with various conditions to activate implanted ions and to recrystallize the films. We tried to find the optimum processing condition by comparing the recrystallization behaviors and the electrical properties. TEM analysis showed that the final grain size of BF2+-implanted films was similar to that of unimplanted films, whereas the grains of P+-implanted films. For both P+ - and BF2+ -implanted films, sheet resistances were decreased with elevating annealing temperature and the minimum value was about 110~120$\Omega$/$\square$ at $600^{\circ}C$.

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Udimet 720Li 합금의 고온변형 및 결정립분포 예측 (Assessment of Hot Deformation and Grain Size Distribution in a Udimet 720Li Pancake)

  • 염종택;나영상;박노광
    • 소성∙가공
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    • 제11권6호
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    • pp.538-546
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    • 2002
  • Hot deformation behavior of Udiment720Li was characterized by compression tests in the temperature range of 10$25^{\circ}C$ to 115$0^{\circ}C$ and the strain rate range of $0.0005 s^{-1};to;5 s^{-1}$. The combination of dynamic material model (DMM) and Ziegler's instability criterion was applied to predict an optimum condition and unstable regions for hot forming. A dynamic recrystallization model coupled with FEM results was used to interpret the evolution of microstructures. In order to verify the reliability of the present coupled model, isothermal forging was performed in the temperature range 1050~115$0^{\circ}C$ at strain rates of $0.05 s^{-1};and;0.005 s^{-1}$. The present model was successfully applied to the hot forming process of Udimet720Li.

변형속도에 따른 M1 마그네슘 합금의 고온변형 중 미세조직 형성 거동 (Effect of Strain Rate on Microstructure Formation Behavior of M1 Magnesium Alloy During High-temperature Deformation)

  • 이규정;김권후
    • 열처리공학회지
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    • 제32권1호
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    • pp.1-11
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    • 2019
  • In this study, microstructure evolution and crystallographic orientation are investigated under various deformation conditions in M1 magnesium alloy. M1 magnesium ingot was rolled at 673 K with the rolling reduction of 30%. The compression test specimens were machined out from rolled plate, and then the specimens were annealed at 823 K for 1h. Uniaxial compression tests were conducted at 723 K and under the strain rate ranging from $5.0{\times}10^{-4}s^{-1}$ to $5.0{\times}10^{-2}s^{-1}$ up to a true strain of -1.0. For observation of crystal orientation distribution, EBSD measurement was performed. Occurrence of the dynamic recrystallization and grain boundary migration were confirmed in all case of the specimens. The distribution of the grains is not uniformed in the experimental conditions.

쌀전분겔의 재결정화에 미치는 수분함량의 영향 (Effects of Moisture Content on Recrystallization of Rice Starch Gels)

  • 백무열;김광중;천기철;하연철;김왕수
    • 한국식품과학회지
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    • 제29권5호
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    • pp.939-946
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    • 1997
  • 동진멥쌀 및 신선찹쌀전분 현탁액의 호화와 이들 전분겔의 저장중 재결정화에 대한 수분함량의 영향을 열적분석기기인 DSC로 측정, 분석한 결과 다음과 같은 결론을 얻었다. 전분의 호화는 찹쌀전분인 경우에 고온에서 일어났으며 상대적으로 큰 엔탈피를 나타내었고, 수분함량 60% 이상에서는 결정 용해 endotherm의 온도범위가 유사하였으나 수분함량이 감소함에 따라 온도범위가 커지고 고온으로 이동하였다. 두 전분겔의 재결정화 정도는 모두 수분함량 40%에서 최대로 나타났으며 수분함량 80% 이상에서는 거의 진행되지 않았다. 또한 Avrami식으로 분석한 재결정화 속도는 수분함량이 증가함에 따라 감소하였으며 찹쌀 전분겔의 재결정화 속도가 상대적으로 더 늦은 것으로 나타났다. 얼음 결정 용해엔탈피의 변화는 재결정화 속도와 유사한 결과를 나타내었으며, 동진쌀 및 신선찹쌀 전분겔의 Wg'은 각각 29.9% 및 28.2%로 나타났다.

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