• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.436-439
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• 2010

SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this work, we report the effect of the interface states ($Q_f$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized by using a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. When the $SiO_2$/SiC interface charge decreases, power losses and switching time also decrease, primarily due to the lowered channel mobilities. High density interface states can result in increased carrier trapping, or more recombination centers or scattering sites. Therefore, the quality of $SiO_2$/SiC interfaces has a important effect on both the static and transient properties of SiC MOSFET devices.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.168-171
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• 1988

The p-n homo junction diode of the III-V ternary alloy semiconductor $In_{1-x}Ga_xP$ : S grown by the temperature gradient solution (TGS) was fabricated by Zn-diffusion, and it's characteristics was investigated. The carrier concentration of $In_{1-x}Ga_xP$ doped with sulfur, 0.5 mol %, was $1{\times}10^{17}cm^{-3}$ and the mobility was varied with the composition. In the case that the diffusion time was constant as 30 minutes. The temperature dependence of diffusion coefficient was decreased from D= $4.2{\times}10^{-5}$ exp (-1.74/$k_{B}T$) to D= $2.5{\times}10^{-5}$ exp (-3.272/$k_{B}T$) with increasing of composition $\times$ from 0.43 to 0.98. The major peak of E.L spectrum was due to D-A pair recombination and the peak intensity was increased with the increasing of input current. And the E.L intensity was decreased with the increasing temperature, and shift to the long wavelength. The luminescence efficiencies measured at $5^{\circ}C$, atmosphere temperature, was decreased from $2.6{\times}10^{-4}$% to $9.49{\times}10^{-6}$ % with increasing of composition it from 0.39, direct transition region, to 0.98, indirect transition region.

• Proceedings of the KIEE Conference
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• 2000.11d
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• pp.754-757
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• 2000

Si PIN diodes are subject to be damaged from the exposure of fast neutron by displacement of Si lattice structure. The defects are effective recombination centers for carriers which migrate through the base region of the PIN diode when forward voltage is applied. It causes an increase in current and a decrease in resistivity of the diode. This paper presents the development of a neutron sensor based on displacement damage effect. PIN diodes having various structures were made by micro-fabrication process, and neutron beam test was performed to identify neutron damage effect to the diode. From a result of the test, it was shown that the forward voltage drop of the diode, at a constant current, has good linearity for neutron dosage. Also it was found that the newton dosage can be measured by the pin diode neutron dosimeter with constant current power.

• Journal of the Korean Solar Energy Society
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• v.32 no.5
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• pp.102-107
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• 2012

Halogen lamp was applied to fabricate the selective emitter crystalline silicon solar cell. In selective emitter structure, the recombination of minority carriers is reduced with heavily doped emitter under metal grid, consequently improving the conversion efficiency. Laser selective emitter process which is recently used the most generally induces the damage on the silicon surface. However the lamp has enough heat to form heavily doped emitter layer by diffusing phosphorus from PSG without surface damage. In this work, we have studied to find the design and the suitable condition for halogen lamp such as power, time, temperature and figured out the possibility to fabricate the selective emitter silicon solar cell by lamp heating. The sheet resistance with $100{\Omega}/{\Box}$ was lower to $50{\Omega}/{\Box}$ after halogen lamp treatment. Heat transfer to lightly doped emitter region was blocked by using the shadow mask.

• Journal of the Korean Institute of Intelligent Systems
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• v.14 no.5
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• pp.563-570
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• 2004

Genetic algorithms have been successfully applied to various optimization problems belonging to NP-hard problems. The sequential ordering problems(SOP) and the job shop scheduling problems(JSP) are well-known NP-hard problems with strong influence on industrial applications. Both problems share some common properties in that they have some imposed precedence constraints. When genetic algorithms are applied to this kind of problems, it is desirable for genetic operators to be designed to produce chromosomes satisfying the imposed precedence constraints. Several genetic operators applicable to such problems have been proposed. We call such genetic operators precedence-preserving genetic operators. This paper presents three existing precedence-preserving genetic operators: Precedence -Preserving Crossover(PPX), Precedence-preserving Order-based Crossover (POX), and Maximum Partial Order! Arbitrary Insertion (MPO/AI). In addition, it proposes two new operators named Precedence-Preserving Edge Recombination (PPER) and Multiple Selection Precedence-preserving Order-based Crossover (MSPOX) applicable to such problems. It compares the performance of these genetic operators for SOP and JSP in the perspective of their solution quality and execution time.

• Environmental Mutagens and Carcinogens
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• v.19 no.1
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• pp.7-13
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• 1999

The mouse lymphoma thymidine kinase (tk+/-) gene assay (MOLY) using L5178Y tk+/- mouse lymphoma cell line is one of the mammalian forward mutation assays. It is well known that MOLY has many advantages and more sensitive than the other mammalian forward mutation assays such as x-linked hyposanthine phosphoribosyltransferase (hprt) gene assay. The target gene of MOLY is a heterozygous tk+/- gene located in 11 chromosome of L5178Y tk+/- cell, so it is able to detect the wide range of genetic changes like point mutation, deletion, rearrangement, and mitotic recombination within tk gene or deletion of entire chromosome 11. MOLY has relatively short expression time (2-3 days) compared to 1 week of hprt gene assay. MOLY can also induce relatively high mutant frequency so a large number of events can be recorded. The bimodal distribution of colony size which may indicate gene mutation and chromosome breakage potential of chemicals according to mutation scale such as large normal-growing mutants and small slow-growing mutants can be observed in this assay. The statistical analysis of data can be performed using the MUTANT program developed by York Electronic Research in association with Hazelton as recommended by the UKEMS (United Kingdom Environmental Mutagen Society) guidelines. This report reviewed MOLY using the microtiter cloning technique (microwell assay).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.10
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• pp.625-629
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• 2016

Electrical and optical properties of the AC voltage driven organic light-emitting diodes were investigated by measuring the electroluminescence of the device. Device structure of ITO(170 nm)/TPD(40 nm)/Alq3(60 nm)/LiF(0.5 nm)/Al(100 nm) was manufactured using a thermal evaporation. Sinusoidal and square-type AC voltage was applied to the device using a function generator. Amplitude of the applied voltage was 9.0 V, and a frequency was varied from 50 Hz to 50 kHz. Electroluminescence out of the device was measured in a Si photodetector simultaneously with the applied voltage together. An intensity and a delayed residual luminescence from the device were depended on the frequency of the sinusoidal voltage. It is thought to be due to a contribution of the capacitive nature in the equivalent circuit of the device. An electron mobility was estimated using a time constant obtained from the luminescence of the device driven by the square-type AC voltage.

• Journal of the Korean Society of Costume
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• v.66 no.2
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• pp.103-116
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• 2016

This study intends to discover characteristics and methods of retro image wedding dresses by analyzing prior studies about retro characteristics. The characteristics of retro image wedding dresses are as follows: 'Recreative Retro', Trend revival Retro', 'Nostalgic Retro' and 'Remixed Retro'. The expressional characteristics and methods of each character are as follows. The 'Recreated Retro' has been recreated in the wedding dresses worn by celebrities, actresses' wedding dresses in movies, and also in the famous designer's high end wedding dresses. These dresses do not merely duplicate the originals, but also reflect images, which were reproduced by combining modern technology. The 'Trend revival Retro' emerged as a combination of past fashion styles and new trends. It seems to stimulate the customers' reminiscence of past fashion trends and create unique designs through expressing the metaphor or the adaptation of past fashion styles. The 'Nostalgic Retro' started from the discovery of emotional values for something old or the inclination to be attracted to old styles. It has been expressed through design concepts with natural themes. The 'Remixed Retro' is from recombination of Retro elements. It is shown as a new interpretative code which explains how current time blends with different times.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.179.1-179.1
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• 2014

Si nanowires have exhibited unique optical characteristics, including nano-antenna effects due to the guided mode resonance, significant optical absorption enhancement in wide wavelength and incident angle range due to resonant optical modes, graded refractive index, and scattering. Since Si poor optical absorption coefficient due to indirect bandgap, all such properties have stimulated proposal of new optoelectronic devices whose performance can surpass that of conventional planar devices. We have carried out finite-difference time-domain simulation studies to design optimal Si nanowire array for solar cell applications. Optical reflectance, transmission, and absorption can be calculated for nanowire arrays with various diameter, length, and period. From the absorption, maximum achievable photocurrent can be estimated. In real devices, serious recombination loss occurring at the surface states is known to limit the photovoltaic performance of the nanowire-based solar cells. In order to address such issue, we will discuss how the geometric parameters of the array can influence the spatial distribution of the optical field (resulting optical generation rate) in the nanowires.

• Current Photovoltaic Research
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• v.6 no.1
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• pp.12-16
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• 2018

The interest in perovskite solar cells has been skyrocketed owing to their rapid progress in efficiency in recent years. Here, we report the effect of non-stoichiometry in the methylammonium lead trihalide ($MAPbI_3$) precursors used in a solution process with different MAI : $PbI_2$ ratios of 1 : 0.96, 1 : 1.10, 1 : 1.15, and 1:1.20. With an increase in the $PbI_2$ content, the $PbI_2$ secondary phase was found to form at grain boundary region of perovskite thin films, as evidenced by X-ray diffraction (XRD) and scanning electron microscopy (SEM). In terms of device performance, open-circuit voltage in particular is significantly improved with increasing the molar ratio of $PbI_2$, which is possibly ascribed to the reduction in recombination sites at grain boundary of perovskite and hence the prolonged life time of light-generated carriers according to the reported. As a result, the $PbI_2-excess$ devices exhibited a higher power conversion efficiency compared to the MAI-excess ones.