• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.4
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• pp.187-191
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• 2004

In this work, we used the PCID simulator for simulation of solar cell and examined the effect of front-back surface recombination velocity, minority carrier diffusion length, junction depth and emitter sheet-resistance. As the effect of base thickness, the efficiency decreased by the increase in series resistance with the increase of the thickness and found decrease in efficiency by decrease of the current as the effect of the recombination. Also, as the effect of base resistivity, the efficiency increased somewhat with the decrease in resistivity, but when the resistivity exceeded certain value, the efficiency decreased as a increase in the recombination ratio. The optimum efficiency was obtained at the resistivity 0.5 $\Omega$-cm, and thickness $100\mu\textrm{m}$. We have successfully achieved 10.8% and 13.7% efficiency large area($103mm{\times}103mm$) mono-crystalline silicon solar cells without and with PECVD silicon nitride antireflection coating.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.318-321
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• 2002

This paper presents a proper condition to achieve high conversion efficiency using PC1D simulator on sri-crystalline Si solar cells. Various efficiency influencing parameters such as rear surface recombination velocity and minority carrier diffusion length in the base region, front surface recombination velocity, junction depth and doping concentration in the Emitter layer, BSF thickness and doping concentration were investigated. Optimized cell parameters were given as rear surface recombination of 1000 cm/s, minority carrier diffusion length in the base region 200 $\mu\textrm{m}$, front surface recombination velocity 100 cm/s, sheet resistivity of emitter layer 100 Ω/$\square$, BSF thickness 5 $\mu\textrm{m}$, doping concentration 5${\times}$10$\^$19/ cm$\^$-3/. Among the investigated variables, we learn that a diffusion length of base layer acts as a key factor to achieve conversion efficiency higher than 19 %.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.232-242
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• 2015

Analytical study of surface recombination at the $Si/SiO_2$ interface is carried out in order to set the optimum surface conditions that result in minimum dark base current and maximum open circuit voltage in silicon solar cells. Recombination centers are assumed to form a continuum rather than to be at a single energy level in the energy gap. It is shown that the presence of a hump in the dark I-V characteristics of high efficiency PERL cells is due to the dark current transition from a high surface recombination regime at low voltage to a low surface recombination regime at high voltage. Successful fitting of reported dark I-V characteristics of a typical PERL cell is obtained with several possible combinations of surface parameters including equal electron and hole capture cross sections.

• Asian-Australasian Journal of Animal Sciences
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• v.33 no.6
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• pp.1023-1033
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• 2020

Objective: The efficiency of the knock-in process is very important to successful gene editing in domestic animals. Recently, it was reported that transient loosening of the nucleosomal folding of transcriptionally inactive chromatin might have the potential to enhance homologous recombination efficiency. The objective of this study was to determine whether histone deacetylases (HDAC) inhibitor and RAD51 recombinase (RAD51) expression were associated with increased knock-in efficiency on the β-casein (bCSN2) gene locus in mammary alveolar-large T antigen (MAC-T) cells using the transcription activator-like effector nucleases (TALEN) system. Methods: MAC-T cells were treated with HDAC inhibitors, valproic acid, trichostatin A, or sodium butyrate for 24 h, then transfected with a knock-in vector, RAD51 expression vector and TALEN to target the bCSN2 gene. After 3 days of transfection, the knock-in efficiency was confirmed by polymerase chain reaction and DNA sequencing of the target site. Results: The level of HDAC 2 protein in MAC-T cells was decreased by treatment with HDAC inhibitors. The knock-in efficiency in MAC-T cells treated with HDAC inhibitors was higher than in cells not treated with inhibitors. However, the length of the homologous arm of the knock-in vector made no difference in the knock-in efficiency. Furthermore, DNA sequencing confirmed that the precision of the knock-in was more efficient in MAC-T cells treated with sodium butyrate. Conclusion: These results indicate that chromatin modification by HDAC inhibition and RAD51 expression enhanced the homologous recombination efficiency on the bCSN2 gene locus in MAC-T cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.512-515
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• 2009

We have fabricated blue phosphorescent organic light emitting diodes (PHOLEDs) using a 3,5'-N,N'-dicarbazole-benzene (mCP) host and iridium (III) bis[(4,6-difluorophenyl)-pyridinato-N,$C^{2'}$] picolinate (Flrpic) guest materials, The Flrpic was partially doped into the mCP host layer, for investigating recombination zone, current efficiency, and emission characteristics of the blue PHOLEDs. The recombination of electrons and holes takes place inside the mCP layer adjacent to the mCP/hole blocking layer interface. The best current efficiency was obtained in a device with an emission layer structure of mCP (10 nm)/mCP:Flrpic (20 nm, 10%). The high current efficiency in this device was attributed to the confinement of Ffrpic triplet excitons by the undoped mCP layer with high triplet energy, which blocks diffusion of Ffrpic excitons to the adjacent hole transport layer with a lower triplet energy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.553-556
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• 1999

This paper presents a proper condition to achieve above 19 % conversion efficiency using PC1D simulator. Cast poly-Si wafers with resistivity of 1 $\Omega$-cm and thickness of 250 ${\mu}{\textrm}{m}$ were used as a starting material. Various efficiency influencing parameters such as rear surface recombination velocity and minority carrier diffusion length in the base region, front surface recombination velocity, junction depth and doping concentration in the Emitter layer, BSF thickness and doping concentration were investigated. Optimized cell parameters were given as rear surface recombination of 1000 cm/s, minority carrier diffusion length in the base region 200 ${\mu}{\textrm}{m}$, front surface recombination velocity 100 cnt/s, sheet resistivity of emitter layer 100 $\Omega$/$\square$, BSF thickness 5 ${\mu}{\textrm}{m}$, doping concentration 5$\times$10$^{19}$ cm$^3$ . Among the investigated variables, we learn that a diffusion length of base layer acts as a key factor to achieve conversion efficiency higher than 19 %. Further details of simulation parameters and their effects to cell characteristics are discussed in this paper.

• Journal of Industrial Technology
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• v.43 no.1
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• pp.33-41
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• 2023

This paper provides a general overview of surface catalytic recombination in hypersonic flow. The surface catalytic recombination phenomena is elaborated in terms of its general overview and numerical modeling associated with it. The general overview of the surface catalytic recombination phenomena describes the elementary surface reactions for the surface catalytic and the role of the surface catalytic recombination efficiency in the heat transfer determination. In the numerical modeling, the surface catalytic recombination is described based on the stagnation-point boundary layer analysis, and finite-rate surface reaction modeling. Throughout this overview manuscript, a general understanding of this phenomena is obtained and can be used as foundation for deeper application with the numerical computational fluid dynamics (CFD) flow solver to estimate the surface heat transfer in the hypersonic vehicles.

• Solar Energy
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• v.5 no.2
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• pp.54-59
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• 1985

Due to the grainboundary recombination and the poor diffusion length, the polycrystalline cell efficiency is lower than the singlecrystalline cell. In order to define the effect of grains and grain-boundaries, 2 - dimensional differential diffusion equations of minority carrier are modelled. To solve them, two theoretical formulas are derived, which can be evaluated the grainboundary recombination velocity and the grain diffusion length. Also computer-aided numerical analysis is given.

• Journal of Microbiology and Biotechnology
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• v.5 no.3
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• pp.132-137
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• 1995

The lambda integrase (lnt) is believed to bind to several arm and core sites of attP DNA in order to facilitate intasome formation. We have done systematic mutagenic analysis on all 5 arm sites and found that P1 is absolutely required for integration while P2 is not. We also found that all 3 P' arm sites(P'1, P'2, and P'3) are required for efficient integrative recombination. P'1, which is an important binding site for excision, also seems to be crucial for integration when preincubation of attP DNA with Int and IHF is performed before recombination. Preincubation assay revealed that preincubation with Int and IHF improved the efficiency of recombination of wild type attP DNA and demolished recombinations of P'1 mutant attP DNAs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.63-66
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• 2000

In this paper, we present the simulation of the heterojunction bipolar transistor with different Emitter-Base junction structures. Our simulation results include effect of setback and graded layer. We prove the emitter efficiency's improvement through setback and graded layer. In 1995, the analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt and linearly graded heterojunctions with or without a setback layer was derived. But setback layer and linearly graded layer's recombination current was considered numerically. Later, recombination current model included setback layer and graded layer will be proposed. New recombination current model also wile include abrupt heterojunction's recombination current model. In this paper, the material parameters of the heterojunction bipolar transistor with different Emitter-Base junction structures is introduced.