• 제목/요약/키워드: readout integrated circuit

검색결과 31건 처리시간 0.025초

Capacitive Readout Circuit for Tri-axes Microaccelerometer with Sub-fF Offset Calibration

  • Ouh, Hyun Kyu;Choi, Jungryoul;Lee, Jungwoo;Han, Sangyun;Kim, Sungwook;Seo, Jindeok;Lim, Kyomuk;Seok, Changho;Lim, Seunghyun;Kim, Hyunho;Ko, Hyoungho
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제14권1호
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    • pp.83-91
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    • 2014
  • This paper presents a capacitive readout circuit for tri-axes microaccelerometer with sub-fF offset calibration capability. A charge sensitive amplifier (CSA) with correlated double sampling (CDS) and digital to equivalent capacitance converter (DECC) is proposed. The DECC is implemented using 10-bit DAC, charge transfer switches, and a charge-storing capacitor. The DECC circuit can realize the equivalent capacitance of sub-fF range with a smaller area and higher accuracy than previous offset cancelling circuit using series-connected capacitor arrays. The readout circuit and MEMS sensing element are integrated in a single package. The supply voltage and the current consumption of analog blocks are 3.3 V and $230{\mu}A$, respectively. The sensitivities of tri-axes are measured to be 3.87 mg/LSB, 3.87 mg/LSB and 3.90 mg/LSB, respectively. The offset calibration which is controlled by 10-bit DECC has a resolution of 12.4 LSB per step with high linearity. The noise levels of tri-axes are $349{\mu}g$/${\sqrt}$Hz, $341{\mu}g$/${\sqrt}$Hz and $411{\mu}g$/${\sqrt}$Hz, respectively.

중적외선 감지용 초점면 배열 HgCdTe의 신호 취득 회로 설계 및 열영상 구현 (ROIC Design of HgCdTe FPA for MWIR detection and Implementation of Thermal Image)

  • 김병혁;이희철;김충기
    • 전자공학회논문지SC
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    • 제37권3호
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    • pp.63-71
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    • 2000
  • 모든 물체에서 방출되는 적외선을 감지하여 영상신호로 만들어 주는 적외선 감지 칩은 보편적으로 적외선감지 소자와 신호 취득 회로가 각기 다른 칩으로 제작되어 하이브리드 본딩 기법을 통해 만들어 진다. 본 논문에서는 신호 취득 회로의 설계 과정과 시뮬레이션 결과를 보여 주며, 실제 제작 결과, 6V의 인가 전압에서 설계 사양에 만족하는 동작 특성을 보임을 확인하였다. 제작된 신호 취득 회로를 이용하여 적외선 감지칩을 제작하고 이를 자체 제작한 열영상 시스템에 장착하여 열영상을 구현해 보았다. 얻어진 열영상은 고온과 상온의 물체에 대해서 인식이 가능한 수준이었으며, 열영상 시스템의 잡음 특성을 좀 더 개선할 경우 더나은 열영상을 얻을 수 있으리라 기대한다.

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Averaging Current Adjustment Technique for Reducing Pixel Resistance Variation in a Bolometer-Type Uncooled Infrared Image Sensor

  • Kim, Sang-Hwan;Choi, Byoung-Soo;Lee, Jimin;Lee, Junwoo;Park, Jae-Hyoun;Lee, Kyoung-Il;Shin, Jang-Kyoo
    • 센서학회지
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    • 제27권6호
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    • pp.357-361
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    • 2018
  • This paper presents an averaging current adjustment technique for reducing the pixel resistance variation in a bolometer-type uncooled infrared image sensor. Each unit pixel was composed of an active pixel, a reference pixel for the averaging current adjustment technique, and a calibration circuit. The reference pixel was integrated with a polysilicon resistor using a standard complementary metal-oxide-semiconductor (CMOS) process, and the active pixel was applied from outside of the chip. The averaging current adjustment technique was designed by using the reference pixel. The entire circuit was implemented on a chip that was composed of a reference pixel array for the averaging current adjustment technique, a calibration circuit, and readout circuits. The proposed reference pixel array for the averaging current adjustment technique, calibration circuit, and readout circuit were designed and fabricated by a $0.35-{\mu}m$ standard CMOS process.

적외선 탐색기 신호처리를 위한 극저온 밴드갭 회로 동작 조건 제안 및 제작된 칩의 성능 분석 (Operating Conditions Proposal of Bandgap Circuit at Cryogenic Temperature for Signal Processing of Infrared Detector and a Performance Analysis of a Manufactured Chip)

  • 김연규;강상구;이희철
    • 대한전자공학회논문지SD
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    • 제41권12호
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    • pp.59-65
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    • 2004
  • 적외선 소자로부터 생성되는 신호의 잡음 특성의 향상, 즉 좋은 영상을 얻기 위해서 적외선 영상신호 취득회로(ROIC)에서는 안정적인 기준 전압원이 필요하다. 본 논문은 극저온인 77K에서 동작하는 적외선 영상신호 취득회로(readout integrated circuit)를 위한 밴드갭 회로를 처음으로 제작한 후 측정, 평가하여 그 실용 가능성을 입증하고 있다. 밴드갭 회로는 대표적인 전압 기준회로로서 기존에 발표된 대부분의 밴드갭 회로는 실온에서 동작하는 것이며, 액체질소 온도 77K에서는 그 특성이 적합하지 않다. 본 논문에서는 극저온에서 동작하는 밴드갭 회로 설계를 위하여, 그에 맞는 회로를 선택하여 온도변화에 따른 사용되는 소자들의 파라미터에 대한 이론정립을 통한 그것의 특성을 살펴보고, 이러한 특성들을 고려하여 저온동작에 적합도록 하였다. 이 회로는 Hynix 0.6um standard CMOS 공정을 통해서 제작되었으며, 측정된 출력전압($V_{out}$)은 60K에서 110K까지 1.0396$\pm$0.0015V로서 기존의 실온에 동작하던 밴드갭 회로보다 더 높은 안정도를 보여주었다.

Parameterized Simulation Program with Integrated Circuit Emphasis Modeling of Two-level Microbolometer

  • Han, Seung-Oh;Chun, Chang-Hwan;Han, Chang-Suk;Park, Seung-Man
    • Journal of Electrical Engineering and Technology
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    • 제6권2호
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    • pp.270-274
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    • 2011
  • This paper presents a parameterized simulation program with integrated circuit emphasis (SPICE) model of a two-level microbolometer based on negative-temperature-coefficient thin films, such as vanadium oxide or amorphous silicon. The proposed modeling begins from the electric-thermal analogy and is realized on the SPICE modeling environment. The model consists of parametric components whose parameters are material properties and physical dimensions, and can be used for the fast design study, as well as for the co-design with the readout integrated circuit. The developed model was verified by comparing the obtained results with those from finite element method simulations for three design cases. The thermal conductance and the thermal capacity, key performance parameters of a microbolometer, showed the average difference of only 4.77% and 8.65%, respectively.

최근 터치스크린 Readout 시스템의 연구 경향 (Recent Research Trends in Touchscreen Readout Systems)

  • 이준민;함주원;장우석;이하민;구상모;오종민;고승훈
    • 한국전기전자재료학회논문지
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    • 제36권5호
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    • pp.423-432
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    • 2023
  • With the increasing demand for mobile devices featuring multi-touch operation, extensive research is being conducted on touch screen panel (TSP) Readout ICs (ROICs) that should possess low power consumption, compact chip size, and immunity to external noise. Therefore, this paper discusses capacitive touch sensors and their readout circuits, and it introduces research trends in various circuit designs that are robust against external noise sources. The recent state-of-the-art TSP ROICs have primarily focused on minimizing the impact of parasitic capacitance (Cp) caused by thin panel thickness. The large Cp can be effectively compensated using an area-efficient current compensator and Current Conveyor (CC), while a display noise reduction scheme utilizing a noise-antenna (NA) electrode significantly improves the signal-to-noise ratio (SNR). Based on these achievements, it is expected that future TSP ROICs will be capable of stable operation with thinner and flexible Touch Screen Panels (TSPs).

Low-Noise MEMS Microphone Readout Integrated Circuit Using Positive Feedback Signal Amplification

  • Kim, Yi-Gyeong;Cho, Min-Hyung;Lee, Jaewoo;Jeon, Young-Deuk;Roh, Tae Moon;Lyuh, Chun-Gi;Yang, Woo Seok;Kwon, Jong-Kee
    • ETRI Journal
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    • 제38권2호
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    • pp.235-243
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    • 2016
  • A low-noise readout integrated circuit (ROIC) for a microelectromechanical systems (MEMS) microphone is presented in this paper. A positive feedback signal amplification technique is applied at the front-end of the ROIC to minimize the effect of the output buffer noise. A feedback scheme in the source follower prevents degradation of the noise performance caused by both the noise of the input reference current and the noise of the power supply. A voltage booster adopts noise filters to cut out the noise of the sensor bias voltage. The prototype ROIC achieves an input referred noise (A-weighted) of -114.2 dBV over an audio bandwidth of 20 Hz to 20 kHz with a $136{\mu}A$ current consumption. The chip is occupied with an active area of $0.35mm^2$ and a chip area of $0.54mm^2$.

기준신호 보상회로를 이용한 더블 샘플링 방식의 비냉각형 볼로미터 검출회로 설계에 관한 연구 (A Study on Double Sampling Design of CMOS ROIC for Uncooled Bolometer Infrared Sensor using Reference Signal Compensation Circuit)

  • 배영석;정은식;오주현;성만영
    • 한국전기전자재료학회논문지
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    • 제23권2호
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    • pp.89-92
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    • 2010
  • A bolometer sensor used in an infrared thermal imaging system has many advantages on the process because it does not need a separate cooling system and its manufacturing is easy. However the sensitivity of the bolometer is low and the fixed pattern noise(FPN) is large, because the bolometer sensor is made by micro electro mechanical systems (MEMS). These problems can be fixed-by using the high performance readout integrated circuit(ROIC) with noise reduction techniques. In this paper, we propose differential delta sampling circuit to remove the mismatch noise of ROIC itself, the FPN of the bolometer. And for reduction of FPN noise, the reference signal compensation circuit which compensate the reference signal by using on-resistance of MOS transistor was proposed.

$320{\times}256$ 초점면배열 적외선 검출기를 위한 고성능 저 전력 신호취득회로의 제작 (Fabrication of High Performance and Low Power Readout Integrated Circuit for $320{\times}256$ IRFPA)

  • 김치연
    • 한국군사과학기술학회지
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    • 제10권2호
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    • pp.152-159
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    • 2007
  • This paper describes the design, fabrication, and measurement of ROIC(ReadOut Integrated Circuit) for $320{\times}256$ IRFPA(InfraRed Focal Plane Array). A ROIC plays an important role that transfer photocurrent generated in a detector device to thermal image system. Recently, the high performance and low power ROIC adding various functions is being required. According to this requirement, the design of ROIC focuses on 7MHz or more pixel rate, low power dissipation, anti-blooming, multi-channel output mode, image reversal, various windowing, and frame CDS(Correlated Double Sampling). The designed ROIC was fabricated using $0.6{\mu}m$ double-poly triple-metal Si CMOS process. ROIC function factors work normally, and the power dissipation of ROIC is 33mW and 90.5mW at 7.5MHz pixel rate in the 1-channel and 4-channel operation, respectively.

A Readout IC Design for the FPN Reduction of the Bolometer in an IR Image Sensor

  • Shin, Ho-Hyun;Hwang, Sang-Joon;Jung, Eun-Sik;Yu, Seung-Woo;Sung, Man-Young
    • Transactions on Electrical and Electronic Materials
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    • 제8권5호
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    • pp.196-200
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    • 2007
  • In this paper, we propose and discuss the design using a simple method that reduces the fixed pattern noise(FPN) generated on the amorphous Si($\alpha-Si$) bolometer. This method is applicable to an IR image sensor. This method can also minimize the size of the reference resistor in the readout integrated circuit(ROIC) which processes the signal of an IR image sensor. By connecting four bolometer cells in parallel and averaging the resistances of the bolometer cells, the fixed pattern noise generated in the bolometer cell due to process variations is remarkably reduced. Moreover an $\alpha-Si$ bolometer cell, which is made by a MEMS process, has a large resistance value to guarantee an accurate resistance value. This makes the reference resistor be large. In the proposed cell structure, because the bolometer cells connected in parallel have a quarter of the original bolometer's resistance, a reference resistor, which is made by poly-Si in a CMOS process chip, is implemented to be the size of a quarter. We designed a ROIC with the proposed cell structure and implemented the circuit using a 0.35 um CMOS process.