• Journal of the Korean Vacuum Society
• /
• v.19 no.4
• /
• pp.287-292
• /
• 2010

We have investigated the effects of oxygen flow ratios on the structural, morphological, and optical properties of AlN thin films grown by using radio-frequency reactive magnetron sputtering. The AlN thin films were deposited at $300^{\circ}C$ of substrate temperature, and the reactive gas were supplied with both nitrogen and oxygen. The oxygen flow ratio was varied by controlling the amount of oxygen with respect to the total mixed gases, 0%, 10%, 15%, 20%, 25%, and 30%. The structural, morphological, and optical properties of the deposited AlN thin films were examined by using X-ray diffractometer, scanning electron microscopy, and ultraviolet-visible spectrophotometer. The AlN thin film grown at 10% of oxygen flow ratio indicated an average transmittance of 91.3% in the wavelength range of 350~1,100 nm and an optical band gap of 4.30 eV. The experimental results suggest that AlN thin films can be deposited optionally by varying the oxygen flow ratio.

• Transactions on Electrical and Electronic Materials
• /
• v.17 no.3
• /
• pp.146-149
• /
• 2016

The CrN/TiN/Al thin films for solar selective absorber were prepared by dc reactive magnetron sputtering with multi targets. The binary nitride CrN layer deposited with change in N₂ gas flow rates. The gas mixture of Ar and N2 was an important parameter during sputtering deposition because the metal volume fraction (MVF) was controlled by the N2 gas flow rate. In this study, the crystallinity and surface properties of the CrN/TiN/Al thin films were estimated by X-ray diffraction (XRD), atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). The composition and depth profile of thin films were investigated using Auger electron spectroscopy (AES). The absorptance and reflectance with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 300~1,100 nm.

• Journal of the Korean Ceramic Society
• /
• v.48 no.4
• /
• pp.316-322
• /
• 2011

Tin oxide thin films were deposited by rf reactive sputtering and annealed at $400^{\circ}C$ for 1 h in vacuum. To minimize the influence such as reduction, oxidation, and doping on tin oxide thin films during annealing, a vacuum ambient annealing was adopted. The structural, optical, and electrical properties of tin oxide thin films were characterized by X-ray diffraction, atomic force microscope, UV-Vis spectrometer, and Hall effect measurements. After vacuum annealing, the grain size of all thin films was slightly increased and the roughness ($R_a$) was improved, however irregular and coalesced shapes were observed from the most of the films. These irregular and coalesced crystal shapes and the possible elimination of intrinsic defects might have caused a decrease in both carrier concentration and mobility, which degrades electrical conductivity.

• Transactions on Electrical and Electronic Materials
• /
• v.10 no.5
• /
• pp.169-172
• /
• 2009

The ZnO/CuSn/ZnO (ZCSZ) multilayer films were deposited on polycarbonate substrates using reactive RF and DC magnetron sputtering. The thickness of each layer was 50 nm/5 nm/45 nm, respectively. The ZCSZ films showed a sheet resistance of $44{\Omega}$/Sq, which was an order of magnitude lower than that indium tin oxide (ITO) films. Although the ZCSZ films had a CuSn interlayer that absorbed visible light, both films had similar optical transmittances of 74% in the visible wavelength region. The figure of merit of the ZCSZ films was $1.0{\times}10^{-3}{\Omega}^{-1}$ and was greater than the value of the ITO films, $1.6{\times}10^{-4}{\Omega}^{-1}$. From the X-ray diffraction (XRD) analysis, the ITO films did not show any diffraction peaks, whereas the ZCSZ films showed diffraction peaks for the ZnO (100) and (002) phases. The hardness of the ITO and ZCSZ films were 5.8 and 7.1 GPa, respectively, which were determined using nano-indentation. From these results, the ZCSZ films exhibited greater optoelectrical performance and hardness compared to the conventional ITO films.

• Bulletin of the Korean Chemical Society
• /
• v.32 no.9
• /
• pp.3395-3399
• /
• 2011

Copper oxide thin films were synthesized by reactive radio frequency magnetron sputtering at different oxygen gas ratios. The chemical and physical properties of the thin films were investigated by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray diffraction (XRD). XPS results revealed that the dominant oxidation states of Cu were $Cu^0$ and $Cu^+$ at 0% oxygen ratio. When the oxygen ratios increased above 5%, Cu was oxidized as CuO as detected by X-ray induced Auger electron spectroscopy and the $Cu(OH)_2$ phase was confirmed independent of the oxygen ratio. The valence band maxima were $1.19{\pm}0.09$ eV and an increase in the density of states was confirmed after formation of CuO. The thickness and roughness of copper oxide thin films decreased with increasing oxygen ratio. The crystallinity of the copper oxide films changed from cubic Cu through cubic $Cu_2O$ to monoclinic CuO with mean crystallite sizes of 8.8 nm (Cu) and 16.9 nm (CuO) at the 10% oxygen ratio level.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.849-852
• /
• 2004

Indium tin oxide (ITO) thin films on polymeric substrates such as acryl (AC), Poly carbornate (PC), polypropylene (PP), and polyethlene terephthalate (PET) have been deposited by a do reactive magnetron sputtering without heat treatments. Sputtering parameters is an important factor for high Qualify of ITO thin films prepared on polymeric substrates. Furthermore, the material, electrical and optical properties of as-deposited ITO films are dominated by the ratio of oxygen partial pressure. As the experimental results the surface roughness of ITO films becomes rough as the oxygen partial pressure Increases. The electrical resistivity of as-deposited ITO films decreases initially, and then increases with the increase of oxygen partial pressure. The optical transmittance at visible wavelength for all polymeric substrates is above 80%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.05b
• /
• pp.142-145
• /
• 2000

The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with the dc bias voltage of -10V showed lower discharge voltage and lower erosion rate by ion bombardment than those samples prepared by conventional magnetron sputtering or E-beam evaporation. The main factor that improves the discharge characteristics by bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardment during deposition process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.460-463
• /
• 2002

$MoO_3$ thin films were deposited on electrode and heater screen-printed alumina substrates in $O_2$ atmosphere by RF reactive sputtering using Molybdenum metal target. The deposition was performed at $300^{\circ}C$ with 350W of a forward power in an $Ar-O_2$ atmosphere. The working pressure was maintained at $3{\times}10^{-2}mtorr$ and all deposited films were annealed at $500^{\circ}C$ for 5hours. To investigate gas sensing characteristics of the addition doped $MoO_3$ thin film, Co, Ni and Pt were used as adding dopants. The sensing properties were investigated in tenn of gas concentration under exposure of reducing gases such as $H_2$, $NH_3$ and CO at optimum working temperature. Co-doped $MoO_3$ thin film shows the maximum 46.8% of sensitivity in $NH_3$ and Ni-doped $MoO_3$ thin film exhibits 49.7% of sensitivity in $H_2$.

• Korean Journal of Materials Research
• /
• v.7 no.12
• /
• pp.1052-1057
• /
• 1997

현재 전기, 전자, 우주, 자동차, 무기 등의 여러 분야에서 응용되고 있는 TaNx 다층박막저항체의 특성을 개선하기 위하여 magnetron sputtering법으로 TaNx박막을 제조한 후, 온도와 질소분압에 따른 전기저항 및 TCR특성 변화를 조사하였고, 미세조직이 이들 전기적 성질에 미치는 영향을알아보기 위해 상분석과 morphology를 관찰하였다. 그 결과, TaNx을 코팅한 박막의 전기저항은 $N_{2}$Ar이 0.4 이상에서, 금속전도특성에서 이온전도특성으로 변화하였으며,Cr이 TCR효과를 안정시키는 역할은 하여 TaNx/A $I_{2}$ $O_{3}$보다 TaNx/Cr/A $i_{2}$ $O_{3}$박막의 TCR특성이 더 안정하게 나타났다. 또한 TaNx/A $I_{2}$ $O_{3}$박막과 TaNx/Cr/A $i_{2}$ $O_{3}$박막의 경우 모두 $N_{2}$/Ar이 0-0.4정도에서 TCR효과에 좋은 특성을 나타내었다. X-선회절 실험 결과 $N_{2}$/Ar비가 1일 경우에 T $a_{2}$ $N_{.8}$이 생성되었고, 분압이 증가함에 따라 비정질이 생성되었다. morphology가 $N_{2}$/Ar이 증가함에 따라 입자의 모양이 불연속아일랜드 형태로 변화하였으며, 이것은 질소분압에 따른 전기저항 변화와 일치하였다.다.

• Proceedings of the KIEE Conference
• /
• 2000.07c
• /
• pp.2032-2034
• /
• 2000

The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface slew discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with the do bias voltage of -10V showed lower discharge voltage and lower erosion rate by ion bombardment than those samples prepared by conventional magnetron sputtering or E-beam evaporation. The main factor that improves the discharge characteristics by bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardment during deposition process.