• Electrical & Electronic Materials
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• v.8 no.2
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• pp.196-203
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• 1995

We presented Tungsten and Tungsten Nitride thin films deposited by RF and DC sputtering. It deposited at various conditions that determining the resistivity and sheet resistivity by stabilizing the basic theory. We investigated properties of the resistivity and sheet resistivity of these films under various conditions, temperature of substrate, flow rate of the argon gas and content of nitrogen from nitrogen-argon mixtures. As the temperature of substrate increased and the flow rate of the argon gas decreased, the resistivities of these films reduced by structural transformation. We found that these resistivities were depend on the temperature of substrate, flow rate and electric power. Very highly resistive tungsten films obtained at 10W RF power. On the contrary, we found that films deposited by DC sputtering, from which very lowly resistive tungsten films were obtained. Tungsten nitride thin films deposited by reactive DC sputtering and the resistivities of these films increased as the content of nitrogen gas increased from nitrogen-argon mixture. And also we found the results show very good agreement, compared with experimental data.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.390-395
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• 2013

Nanocrystalline CrN films were deposited on Si (100) substrates by means of asymmetric pulsed DC reactive magnetron sputtering. We investigated the growth behavior, corrosion resistance and mechanical properties of CrN films with a change in the duty cycle and pulse frequency. The grain size of the CrN films decreased from 25.4 nm to 11.2 nm upon a decrease in the duty cycle. The corrosion potentials for the CrN films by DC sputtering was approximately - 0.6 V, and it increased to - 0.3 V in the CrN films which underwent pulsed sputtering. The nanoindentation hardness of the CrN films also increased with a decrease in the duty cycle. This enhancement of the corrosion resistance and mechanical properties of pulsed sputtered CrN films could be attributed to the densification and surface smoothness of the microstructure of the films.

• Journal of Surface Science and Engineering
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• v.52 no.4
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• pp.211-226
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• 2019

Optical thin films were deposited by using a reactive pulsed DC magnetron sputtering method with a high density plasma(HDP). In this study, the effect of sputtering process conditions on the microstructure and optical properties of $SiO_2$, $TiO_2$, $Nb_2O_5$ thin films was clarified. These thin films had flat and dense microstructure, stable stoichiometric composition at the optimal conditions of low working pressure, high pulsed DC power and RF power(HDP). Also, the refractive index of the $SiO_2$ thin films was almost constant, but the refractive indices of $TiO_2$ and $Nb_2O_5$ thin films were changed depending on the microstructure of these films. Antireflection films of $Air/SiO_2/Nb_2O_5/SiO_2/Nb_2O_5/SiO_2/Nb_2O_5/Glass$ structure designed by Macleod program were manufactured by our developed sputtering system. Transmittance and reflectance of the manufactured multilayer films showed outstanding value with the level of 95% and 0.3%, respectively, and also had excellent durability.

• Electrical & Electronic Materials
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• v.9 no.2
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• pp.196-203
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• 1996

The highly c-axis oriented zinc oxide thin films were deposited on Sapphire(0001) substrates by reactive RF magnetron sputtering. The characteristics of zinc oxide thin films on RF power, substrate-target distance, and substrate temperature were investigated by XRD, SEM and EDX analyses. The physical characteristics of zinc oxide thin films changed with various deposition conditions. The higher substrate temperatures were, The better crystallinity of zinc oxide thin films. The highly c-axis oriented zinc oxide thin films were obtained at sputter pressure 5mTorr, rf power 200W, substrate temperature 350.deg. C, substrate-target distance 5.5cm. In these conditions, the resistivity of zinc oxide thin films deposited on pt/sapphire was 12.196*10$^{9}$ [.ohm.cm].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.846-851
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• 2004

Transparent conducting indium tin oxide (TC-ITO) thin films on polymeric substrates have been deposited by a dc reactive magnetron sputtering without heat treatments. The polymeric substrates are acryl (AC), poly carbornate (PC), and polyethlene terephthalate (PET) as well as soda lime glass is also used to compare with the polymeric substrates. Sputtering parameters are an important factor for high quality of TC-ITO thin films prepared on polymeric substrates. Furthermore, the material, electrical and optical properties of as-deposited ITO films are dominated by the ratio of oxygen partial pressure. As the experimental results, the surface roughness of ITO films becomes rough as the oxygen partial pressure increases. The electrical resistivity of as-deposited ITO films decreases initially, and then increases with the increase of oxygen partial pressure. The optical transmittance at visible wavelength for all polymeric substrates is above 82 %.

• Transactions on Electrical and Electronic Materials
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• v.11 no.6
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• pp.266-270
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• 2010

The effect of an Ar plasma treatment on polycarbonate substrates was investigated using $TiO_2$ coatings produced by reactive ion-beam assisted sputtering. The typical pressure used during sputtering was about $10^{-4}$ Torr. After the Ar plasma treatment, the contact angle of a water droplet was reduced from $88^{\circ}$ to $52^{\circ}$ and then further decreased to $12^{\circ}$ with the addition of oxygen into the chamber. The surface of the polycarbonate substrate hanged from hydrophobic to hydrophilic with these treatments and revealed its changing nano-scale roughness. The $TiO_2$ films on the treated surface showed various colors and periodic ordering dependant on the film thickness due to optical interference.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-film for high precision resistors, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16 %)$N_2$). Structural properties studied using X-ray diffraction(XRD) indicate the presence of TaN, $Ta_3N_5$ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % $N_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho=305.7{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-36 $ppm/^{\circ}C$.

• Journal of Sensor Science and Technology
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• v.16 no.4
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• pp.301-306
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• 2007

AlN thin film for SAW filter application was deposited on (100) silicon wafers by reactive magnetron sputtering method. The structural characteristics were dependent on the deposition conditions such as sputtering pressure, RF power, substrate temperature, and nitrogen partial pressure. Scanning Electron Microscope (SEM), X-ray Diffraction (XRD), Electron Probe MicroAnalyzer (EPMA) and Atomic Force Microscope (AFM) have been used to find out structural properties and preferred orientation of AlN thin films. Insertion loss of SAW devices was 28.51 dB and out of band rejection was about 24 dB.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.44-49
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• 1997

AIN thin films were deposited on silicon and glass substrates by sputtering Al target and introducing mixed gases of argon and nitrogen into reactive RF magnetron sputter. The substrate was not heated to protect the PC (polycarbonate) substrate and the micro-sized pregroove morphology on the surface of PC substrate. But its temperature was around $100^{\circ}C$ due to the self-heating by plasma. The crystallinity, cross-section morphology and refractive index were characterized by changing various deposition parameters.

• Journal of Surface Science and Engineering
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• v.32 no.6
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• pp.671-676
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• 1999

ITO (indium tin oxide) thin films on PET (polyethylene terephthalate) substrate have been deposited by a dc reactive magnetron sputtering without heat treatments such as substrate heater and post heat treatment. Each sputtering parameter during the sputtering deposition is an important factor for the high quality of ITO thin films deposited on polymeric substrate. Particularly, the material, electrical and optical properties of as-deposited ITO oxide films are dominated by the ratio of oxygen partial pressure. As the experimental results, the excellent ITO films are prepared on PET substrate at the operating conditions as follows : operating pressure of 5 mTorr, target-substrate distance of 45mm, do power of 20~30W, and oxygen gas ratio of 10%. The optical transmittance is above 80% at 550 nm, and the sheet resistance and resistivity of films are 24 Ω/square and $1.5\times$10$^{-3}$ Ωcm, respectively.