• 열처리공학회지
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• 제13권6호
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• pp.398-404
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• 2000

The Ti-Al-V-N films have been deposited on various substrates by d.c and r.f reactive magnetron sputtering from a Ti-6Al-4V alloy target in mixed $Ar-N_2$ discharges. The films were investigated by means of XRD, AES, SEM/EDX, microhardness, TG and scratch test. The XRD and SEM results indicated that the films were of single B1 NaCl phase having dense columnar structure with the (111) preferred orientation. The composition of Ti-Al-V-N film was the Ti-7.1Al-4.3V-N(wt%) films. Adhesion and microhardness of Ti-Al-V-N films deposited by r.f magnetron sputtering method were better than those deposited by d.c magnetron sputtering method. The anti-oxidation properties of Ti-Al-V-N films were also superior to that of Ti-N film deposited by the same deposition conditions.

• 한국표면공학회지
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• 제40권3호
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• pp.117-124
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• 2007

The ITO films were deposited on glass substrates by RF-superimposed dc reactive magnetron sputtering and were annealed in $N_2$ vacuum furnace with temperatures in the range of $403K{\sim}573K$ for 30 minutes. Electrical, optical and structural properties of ITO films were examined with varying annealing temperatures from 403 K to 573 K. The resistivity of as-deposited ITO films was $5.4{\times}10^{-4}{\Omega}cm$ at the sputter conditions of applied RF/DC power of 200/200 W, $O_{2}$ flow of 0.2 seem and Ar flow of 0.2 seem. As a result of annealing in the temperature range of $403K{\sim}573K$, the crystallization occurred at 423 K that is lower than the crystallization temperature caused by a conventional sputtering method. And the resistivity decreased from $5.4{\times}10^{-4}{\Omega}cm\;to\;2.3{\times}10^{-4}{\Omega}cm$, the carrier concentration and mobility of ITO films increased from $4.9{\times}10^{20}/cm^3\;to\;6.4{\times}10^{20}/cm^3$, from $20.4cm^2/Vsec\;to\;41.0cm^2/Vsec$, respectively. The transmittance of ITO films in visible became higher than 90% when annealed in the temperature range of $423K{\sim}573K$. High quality ITO thin films made by RF-superimposed dc reactive magnetron sputtering and annealing in $N_2$ vacuum furnace will be applied to transparent conductive oxides of the advanced flat panel display.

• 반도체디스플레이기술학회지
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• 제7권1호
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• pp.29-34
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• 2008

In this paper, the DE(double erosion) cathode for the reactive magnetron sputtering system is developed for high deposition rate and high target utilization efficiency. The utilization efficiency of the developed DE cathode is 22% higher than that of normal SE(single erosion) cathode. Sputtering process for the nickel oxide thin films with the DE cathode is performed under the following conditions; power with $1kW{\sim}3kW$, pressure with 4mtorr and 8mtorr, oxygen flow ratio with $0%{\sim}80%$. As a result, the hysteresis phenomenon of discharge voltage in 4mtorr is lower than that in 8mtorr and the hysteresis phenomenon of discharge voltage is getting lower as the applied power is getting higher. The structure of cross section and surface roughness of the thin films are observed by FE-SEM and AFM. The structure of cross section of the thin films is columnar and the average surface roughness under oxygen flow ratio of 0%, 52.5% and 65.0% are $2.08{\AA}$, $2.20{\AA}$ and $0.854{\AA}$, respectively.

• 한국세라믹학회지
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• 제33권7호
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• pp.802-808
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• 1996

PbTiO3 thin films were fabricated onto MgO(100) single crystal substrate by reactive D. C magnetron sput-tering of Pb and Ti metal in an oxygen and argon gas mixture. The annealing of the thin films resulted in the decrease of both the c-axis orientation ratio and the lattice parameter. It is well known that the c-axis lattice parameter of thin film is dependent on the Pb/(Pb+Ti)ratio and the residual stress in the film The PbTiO3 thin films with a Pb/(Pb+T) ratio ranging from 0.45 to 0.57 were fabricated and annealed. The structure of the film the c-axis orientation ratio and the lattice parameter were not dependent on the Pb/(Pb+Ti) ratio before and after annealing. These experimental results proved that the decrease of the c-axis lattice parameter under the annealing conditions was due to the relaxation of the intrinsic stress in the film. This relaxation of the intrinsic stress caused the decrease of the c-axis orientation ratio and this phenomenon can be explained by c-axis growth lattice model.

• 한국재료학회지
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• 제14권11호
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• pp.821-827
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• 2004

Titanium oxide thin films were prepared on Si(100) substrates by R.F. magnetron reactive sputtering at $30\sim200watt$ R.F power range, and annealed at $600^{\circ}C\sim800^{\circ}C$ for 1 hour. The properties of $TiO_2$ thin films were analyzed using x-ray, ${\alpha}-step$, ellipsometer, scanning electron microscopy, and FT-IR spectrometer. Upon in-situ depositions, the initial phase of $TiO_2$ thin film showed non-crystalline phase at R.F. power $30\sim100$ watt. The crosssection of $TiO_2$ thin films were sbserved to be the columnar structure. With the increasing R.F power and annealing temperature, the grain size, crystallinity, refractive index, and void size of titanium oxides showed a tended to increase. The FT-IR transmittance spectra of titanium oxide thin films have the obsorption band of Ti-O bond, Si-O bond, Si-O-Ti bond and O-H bond. With the increase of R.F. power and annealing temperature, these films have the stronger bond structures. It is considered that such a phenomena is due to phase transition and good crystallinity

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권2호
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• pp.73-78
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• 2004

AIN thin film has been deposited on the $AI_2$$O_3$substrate with reactive radio frequency( RF) magnetron sputtering method. In this work, elelctromechanical coupling coefficient of AIN thin film was increased with an increase of AIN thin film thickness, and the maximum value was 0.11%. Insertion loss of SAW device was decreased with an increase of AIN thin film thickness and the minimum value was 33［㏈］. SAW velocity of IDTs/AIN/$AI_2$$O_3$structure and IDTs/AIN/$AI_2$$O_3$/Si structure were about 5480［㎧］and 5040［㎧］respectively.

• 한국표면공학회지
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• 제40권3호
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• pp.113-116
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• 2007

Titanium dioxide ($TiO_2$) films were deposited by RF reactive magnetron sputtering on non-alkali glass and single crystal MgO (100) substrate at substrate temperature of $400^{\circ}C$. Micro structures of $TiO_2$ films were investigated by XRD, FE-SEM, and Pole figure measurements. $TiO_2$ films deposited on glass substrate showed preferred orientation of anatase (101), whereas $TiO_2$ films deposited on the MgO single crystal substrate showed hetero-epitaxial anatase (100). $TiO_2$ film grown on MgO substrate showed higher photoctalytic activity than that of glass substrate.

• 한국재료학회지
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• 제12권6호
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• pp.452-457
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• 2002

Titanium oxide films were prepared by RF reactive magnetron sputtering. The effect of sputtering conditions on structural and optical properties was investigated systemically as a function of sputtering pressure(5~20 mTorr) and $O_2/Ar$ flow ratio(0.08~0.4). The results of the X-ray diffraction showed that all films had only the anatase $TiO_2$ phase. At low sputtering pressure and $O_2/Ar$ flow ratio, the films had preferred orientations along [101] and [200] directions. As the sputtering pressure and $O_2/Ar$ flow ratio increased, the intensity of the 101 and 200 diffraction peaks decreased gradually. The microstructure of the sputtered films showed the fine grain size (20nm~50nm) and columnar microcrystals perpendicular to the substrate. With increasing the sputtering pressure and decreasing $O_2/Ar$ flow ratio, the sputtered films showed the more porous columnar structure. XPS analysis showed that stoichiometric $TiO_2$ films were deposited at 7 mTorr sputtering pressure and 0.2 $O_2/Ar$ flow ratio. The results of the X-ray diffraction showed that all films had only the anatase $TiO_2$ phase. Ellipsometeric analysis showed that the refractive index increased from 2.32 to 2.46 as the sputtering pressure decreased. The packing density calculated using the refractive index varied from 0.923 to 0.976, indicating that $TiO_2$films became denser as the sputtering pressure decreased.

• 한국표면공학회지
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• 제45권5호
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• pp.206-211
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• 2012

Process analysis was carried out during deposition of MgO by inductively coupled plasma assisted reactive magnetron sputtering in Ar and $O_2$ ambient. At the initiation of Mg sputtering with bipolar pulsed dc power in Ar ambient, total pressure showed sharp increase and then slow fall. To analyse partial pressure change, QMS was used in downstream region, where the total pressure was maintained as low as $10^{-5}$ Torr during plasma processing, good for ion source and quadrupole operation. At base pressure, the major impurity was $H_2O$ and the second major impurity was $CO/N_2$ about 10%. During sputtering of Mg in Ar, $H_2$ soared up to 10.7% of Ar and remained as the major impurity during all the later process time. When $O_2$ was mixed with Ar, the partial pressure of Ar decreased in proportion to $O_2$ flow rate and that of $H_2$ dropped down to 2%. It was understood as Mg target surface was oxidized to stop $H_2$ emission by Ar ion sputtering. With ICP turned on, the major impurity $H_2$ was converted into $H_2O$ consuming $O_2$ and C was also oxidized to evolve CO and $CO_2$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.430-430
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• 2012

The surface recombination velocity of the silicon solar cell could be reduced by passivation with insulating layers such as $SiO_2$, SiNx, $Al_2O_3$, a-Si. Especially, the aluminium oxide has advantages over other materials at rear surface, because negative fixed charge via Al vacancy has an additional back surface field effect (BSF). It can increase the lifetime of the hole carrier in p-type silicon. The aluminium oxide thin film layer is usually deposited by atomic layer deposition (ALD) technique, which is expensive and has low deposition rate. In this study, ICP-assisted reactive magnetron sputtering technique was adopted to overcome drawbacks of ALD technique. In addition, it has been known that by annealing aluminium oxide layer in nitrogen atmosphere, the negative fixed charge effect could be further improved. By using ICP-assisted reactive magnetron sputtering technique, oxygen to nitrogen ratio could be precisely controlled. Fabricated aluminium oxy-nitride (AlON) layer on silicon wafers were analyzed by x-ray photoelectron spectroscopy (XPS) to investigate the atomic concentration ratio and chemical states. The electrical properties of Al/($Al_2O_3$ or $SiO_2/Al_2O_3$)/Si (MIS) devices were characterized by the C-V measurement technique using HP 4284A. The detailed characteristics of the AlON passivation layer will be shown and discussed.