• 한국통신학회논문지
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• 제16권11호
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• pp.1179-1185
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• 1991

초박막 재산화 질화산화막을 $1050^{\circ}C-1100^{\circ}C$ 온도에서 20, 40초 동안 산소 분위기에서 램프 가열 방법의 급속 열처리 공정에 의해 형성 시켰다. 초박막의 전기적 특성은 누설전류, 항복전압, 시간종속 항복과 F-N 관통을 분석 하였다. 질화와 재산화 조건에 따른 전하포획의 의존성 즉 고전계 스트레스에 유기되는 항복전하량$(Q_{BD})$ 증가 여부와 평탄대역 전압이동$(\DeltaV_{FB})$을 연구하였다. 분석 결과에 의하면, 급속 열처리 재산화시 유전적 성질이 상당히 개선되었고, 항복전하량은 증가되었으며, 평탄대역전압은 감소 되었다.

• 센서학회지
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• 제14권5호
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• pp.337-342
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• 2005

A silicon-based micro-reactor to amplify small amount of deoxyribonucleic acid (DNA) has been fabricated using micro-electro-mechanical systems (MEMS) technology. Polymerase chain reaction (PCR) of DNA requires a precise and rapid temperature control. A Pt sensor is integrated directly in the chamber for real-time temperature measurement and an infrared lamp is used as external heating source for non-contact and rapid heating. In addition to the real-time temperature sensing, PCR needs a rapid thermocycling for effective PCR. For a fast thermal response, the thermal mass of the reactor chamber is minimized by removal of bulk silicon volume around the reactor using double-side KOH etching. The transparent optical property of silicon in the infrared wavelength range provides an efficient absorption of thermal energy into the reacting sample without being absorbed by silicon reactor chamber. It is confirmed that the fabricated micro-reactor could be heated up in less than 30 sec to the denaturation temperature by the external infrared lamp and cooled down in 30 sec to the annealing temperature by passive cooling.

• 한국재료학회지
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• 제26권6호
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• pp.347-352
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• 2016

ZnO with wurtzite structure has a wide band gap of 3.37 eV. Because ZnO has a direct band gap and a large exciton binding energy, it has higher optical efficiency and thermal stability than the GaN material of blue light emitting devices. To fabricate ZnO devices with optical and thermal advantages, n-type and p-type doping are needed. Many research groups have devoted themselves to fabricating stable p-type ZnO. In this study, $As^+$ ion was implanted using an ion implanter to fabricate p-type ZnO. After the ion implant, rapid thermal annealing (RTA) was conducted to activate the arsenic dopants. First, the structural and optical properties of the ZnO thin films were investigated for as-grown, as-implanted, and annealed ZnO using FE-SEM, XRD, and PL, respectively. Then, the structural, optical, and electrical properties of the ZnO thin films, depending on the As ion dose variation and the RTA temperatures, were analyzed using the same methods. In our experiment, p-type ZnO thin films with a hole concentration of $1.263{\times}10^{18}cm^{-3}$ were obtained when the dose of $5{\times}10^{14}$ As $ions/cm^2$ was implanted and the RTA was conducted at $850^{\circ}C$ for 1 min.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.53-60
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• 2014

Different kinds of post-deposition annealing (PDA) by a rapid thermal process (RTP) are used to enhance the field-effect passivation of $Al_2O_3$ film in crystal Si solar cells. To characterize the effects of PDA on $Al_2O_3$ and the interface, metal-insulator semiconductor (MIS) devices were fabricated. The effects of PDA were characterized as functions of RTP temperature from $400{\sim}700^{\circ}C$ and RTP time from 30~120 s. A high temperature PDA can retard the passivation of thin $Al_2O_3$ film in c-Si solar cells. PDA by RTP at $400^{\circ}C$ results in better passivation than a PDA at $400^{\circ}C$ in forming gas ($H_2$ 4% in $N_2$) for 30 minutes. A high thermal budget causes blistering on $Al_2O_3$ film, which degrades its thermal stability and effective lifetime. It is related to the film structure, deposition temperature, thickness of the film, and annealing temperature. RTP shows the possibility of being applied to the PDA of $Al_2O_3$ film. Optimal PDA conditions should be studied for specific $Al_2O_3$ films, considering blistering.

• 한국결정성장학회지
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• 제8권2호
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• pp.299-306
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• 1998

비정질 규소가 결정질로 되기 위해서는 활성화가 필요하다. 이 활성화는 레이저 및 로내에서의 열처리로 열에너지를 가하면 달성될 수 있다. 이때 이 열에너지 외에 기계적 에너지 등을 가하면 활성화에 도움이 될 수 있을 것이다. 본 연구에서는 습식연마와 자기이온주입 등의 방법으로 기계적 손상을 주어서 이것이 LPCVD로 증착된 비정질 규소 박막의 결정화에 미치는 영향을 조사하였다. 결정성 확인을 위해서는 XRD와 라만분석법을 사용하였다. 본 연구의 결과, 기계적 손상이 비정질 규소 박막의 결정화를 증진시키는 것을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.292-292
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• 2014

Wide band gap semiconductors, such as III-nitrides (GaN, AlN, InN, and their alloys), SiC, and diamond are expected to play an important role in the next-generation electronic devices. Specifically, GaN-based high electron mobility transistors (HEMTs) have been targeted for high power, high frequency, and high temperature operation electronic devices for mobile communication systems, radars, and power electronics because of their high critical breakdown fields, high saturation velocities, and high thermal conductivities. For the stable operation, high power, high frequency and high breakdown voltage and high current density, the fabrication methods have to be optimized with considerable attention. In this study, low ohmic contact resistance and smooth surface morphology to AlGaN/GaN on 2 inch c-plane sapphire substrate has been obtained with stepwise annealing at three different temperatures. The metallization was performed under deposition of a composite metal layer of Ti/Al/Ni/Au with thickness. After multi-layer metal stacking, rapid thermal annealing (RTA) process was applied with stepwise annealing temperature program profile. As results, we obtained a minimum specific contact resistance of $1.6{\times}10^{-7}{\Omega}cm2$.

• Transactions on Electrical and Electronic Materials
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• 제13권1호
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• pp.19-22
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• 2012

Transformation behavior of rapidly solidified Ti-47.3Ni (at%) alloy ribbons and thermal stability of the R phase in the ribbons were investigated by means of differential scanning calorimetry (DSC), X-ray diffraction, and transmission electron microscopy. Rapidly solidified Ti-47.3Ni alloy ribbons showed the two-stage B2-R-B19' martensitic transformation behavior. The B2-R transformation in the ribbons was observed even after annealing at 1,223 K, which was attributed to the fact that a specific orientation relationship between $Ti_2Ni$ and matrix in the ribbons is maintained after annealing at 1,223 K. The DSC peak temperature of the B2-R transformation ($T_R^*$) decreased with raising annealing temperature, which was attributed to the increased volume fraction of $Ti_2Ni$, thus causing an increased Ni content in the matrix.

• 한국재료학회지
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• 제12권11호
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• pp.883-888
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• 2002

We investigated the void formation in composite-titanium silicide($TiSi_2$) process. We varied the process conditions of polycrystalline/amorphous silicon substrate, composite $TiSi_2$ deposition temperature, and silicidation annealing temperature. We report that the main reason for void formation is the mass transport flux discrepancy of amorphous silicon substrate and titanium in composite layer. Sheet resistance in composite $TiSi_2$ without patterns is mainly affected by silicidation rapid thermal annealing (RTA) temperature. In addition, sheet resistance does not depend on the void defect density. Sheet resistance with sub-0.5 $\mu\textrm{m}$ patterns increase abnormally above $850^{\circ}C$ due to agglomeration. Our results imply that $sub-750^{\circ}C$ annealing is appropriate for sub 0.5 $\mu\textrm{m}$ composite X$sub-750_2$ process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.5-6
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• 2009

In this paper, plasma ion implant is performed with $PH_3$ gas diluted by helium gas on P-type Si wafer (100). Spike Rapid Thermal Processing(RTP) annealing performed for 30~60 sec from $800\;^{\circ}C$ to $1000\;^{\circ}C$ in $N_2+O_2$ ambient. Crystalline defect is analyzed by Transmission Electron Microscope(TEM) and Double crystal X-ray Diffraction(DXRD). Contact resistivity($\rho c$), contact resistance(Rc) and sheet resistance(Rs) are analyzed by measuring Transfer Length Method(TLM) using 4155C analysis. As annealing temperature increase, Rs decrease and ${\rho}c$ and Rc increase at temperature higher than $850\;^{\circ}C$. We achieve low Rs, ${\rho}c$ and Rc with Plasma ion implant and spike RTP.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.80-83
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• 2000

The post-annealing treatments on rf magnetron sputtered PZT($Pb_{1.05}(Zr_{0.52},\;Ti_{0.48})O_3$) thin films($4000{\AA}$) have been investigated for a structure of PZT/Pt/Ti/Coming glass(1737). Crystallization properties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature and time. We were able to obtain a perovskite structure of PZT at $650^{\circ}C$ and 10min. P-E curves of Pd/PZT/Pt capacitor demonstrate typical hysteresis loops. The measured values of $P_r$, $E_c$ were $8.1[{\mu}C/cm^2]$, 95[kV/cm] respectively. Polarization value decrease about 25% after $10^9$ cycles.