• The Journal of Korean Institute of Communications and Information Sciences
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• v.39B no.12
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• pp.831-841
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• 2014

The attacker can access the RFID systems illegally because authentication operation on the RFID systems are performed in wireless communication. Authentication methods based on the PUF were presented to defend attacks. Because of Hash and AES, the cost is expensive for the low-cost RFID tag. In this paper, the PUF-based encryption processor and the mutual authentication protocol are proposed for low-cost RFID authentication. The challenge-response pairs (PUF's input and output) are utilized as the authentication key and encrypted by the PUF's characteristics. The encryption method is changed each session and XOR operation with random number is utilized. Therefore, it is difficult for the attacker to analyze challenge-response pairs and attack the systems. In addition, the proposed method with PUF is strong against physical attacks. And the method protects the tag cloning attack by physical attacks because there is no authentication data in the tag. Proposed processor is implemented at low cost with small footprint and low power.

• Journal of the Korea Convergence Society
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• v.11 no.1
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• pp.1-7
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• 2020

Recently 5G technology is one of the technologies that has been receiving much positive responses from users as it is integrated with virtual technology. However, 5G's security issues have not been fully resolved and more security is soon required. In this paper, an approach technique is proposed as a probability-based hierarchy to provide personal privacy for 5G-based IoT users more safely. The proposed technique is aimed at not exposing the privacy of IoT users to third parties by using two random keys created personally by IoT users. In order to satisfy both safety and efficiency, the proposed technology divides the privacy of IoT users into two layers. In the first stage, IoT users will control access to intermediate media using anonymous keys generated by IoT users, and in the second stage, information of IoT users registered with servers will be darkened and replicated. The proposed technique has improved the accuracy of the privacy protection of IoT users as they assign weights to layered information after layering users' privacy information on a probabilistic basis.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.1
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• pp.91-105
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• 2016

Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of ${\Phi}_{M1}/{\Phi}_{M2}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.3
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• pp.78-87
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• 2013

NAND flash memory has been widely used as a storage medium in mobile devices, PCs, and workstations due to its advantages such as low power consumption, high performance, and random accessability compared to a hard disk drive. However, NAND flash cannot support in-place update so that it is mandatory to erase the entire block before overwriting the corresponding page. In order to overcome this drawback, flash storages need a software support, named Flash Translation Layer. However, as the high performance mass NAND flash memory is getting widely used, the size of mapping tables is increasing more than the limited DRAM size. In this paper, we propose an adaptive mapping information caching algorithm based on page mapping to solve this DRAM space shortage problem. Our algorithm uses a mapping information caching scheme which minimize the flash memory access frequency based on the analysis of several workloads. The experimental results show that the proposed algorithm can increase the performance by up to 70% comparing with the previous mapping information caching algorithm.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.11
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• pp.18-24
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• 2000

(Ba,Sr)$TiO_3$ thin films have attracted great interest as new dielectric materials of capacitors for ultra-large-scale integrated dynamic random access memories (ULSI-DRAMs) such as 1 Gbit or 4 Gbit. In this study, inductively coupled $BCl_3/Cl_2/Ar$ plasmas was used to etch (Ba,Sr)$TiO_3$ thin films. RF power/dc bias voltage=600 W/-250 V and chamber pressure was 10 mTorr. The $Cl_2/(Cl_2+Ar)$ was fixed at 0.2 the (Ba,Sr)$TiO_3$ thin films were etched adding $BCl_3$. The highest (Ba,Sr)$TiO_3$ etch rate is $480{\AA}/min$ at 10 % $BCl_3$ to $Cl_2/Ar$. The change of Cl, B radical density measured by optical emission spectroscopy(OES) as a function of $BCl_3$ percentage in $Cl_2/Ar$. The highest Cl radical density was shown at the addition of 10% $BCl_3$ to $Cl_2/Ar$. To study on the surface reaction of (Ba, Sr)$TiO_3$ thin films was investigated by XPS analysis. Ion bombardment etching is necessary to break Ba-O bond and to remove $BaCl_2$. There is a little chemical reaction between Sr and Cl, but Sr is removed by physical sputtering. There is a chemical reaction between Ti and Cl, and $TiCl_4$ is removed with ease. The cross-sectional of (Ba,Sr)$TiO_3$ thin film was investigated by scanning electron microscopy (SEM), the etch slope is about 65~70$^{\circ}$.

• Journal of Broadcast Engineering
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• v.25 no.3
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• pp.313-324
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• 2020

In this paper, we propose a motion vector prediction method that increases the coding efficiency at the boundary of an image by utilizing the 360 video characteristic. In the current VVC method, the location of a neighbor block is excluded from the candidate list for inter prediction in case that it is out of boundary. This can reduce coding efficiency as well as subject quality. To solve this problem, we construct new candidates adding the location of the neighbor block at the boundary of the picture from already decoded information based on the projection method for 360 video coding. To evaluate the performance of the proposed method, we compare with VTM6.0 and 360Lib9.1 under Random Access condition of JVET-360 CTC. As a result, the coding performance shows a BD-rate reduction of 0.02% on average in luma component and 0.05%, 0.06% on average in chroma components respectively, without additional computational complexity. The coding performance at the picture boundary shows a BD-rate reduction of 0.29% on average in luma component and 0.45%, 0.43% on average in chroma components, respectively. Furthermore, we perform subjective quality test with the DSCQS method and obtain MOS values. The MOS value is improved by 0.03 value, and we calculate BD-MOS using MOS value and bit-rate. As a result, the proposed method improved performance by up to 8.78% and 5.18% on average.

• Asian Pacific Journal of Cancer Prevention
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• v.16 no.9
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• pp.3981-3990
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• 2015

Background: Breast cancer is the most common type of cancer in Jordan. Current efforts are focused on annual campaigns aimed at increasing awareness about breast cancer and encouraging women to conduct mammogram screening. In the absence of regular systematic screening for breast cancer in Jordan, there is a need to evaluate current mammography screening uptake and its predictors, assess women's knowledge and attitudes towards breast cancer and screening mammograms and to identify barriers to this preventive service. Materials and Methods: This cross-sectional study was conducted in six governorates in Jordan through face-to-face interviews on a random sample of women aged 40 to 69 years. Results: A total of 507 participants with mean age of $46.8{\pm}7.8$ years were interviewed. There was low participation rate in early detection of breast cancer practices. Breast self-examination, doctor examination and periodic mammography screening were reported by 34.9%, 16.8% and 8.6% of study participants, respectively. Additionally 3.8% underwent breast cancer screening at least once but not periodically, while 87.6% had never undergone mammography screening. Reported reasons for conducting the screening were: perceived benefit (50%); family history of breast cancer (23.1%); perceived severity (21.2%); and advice from friend or family member (5.8%). City residents have shown higher probability of undergoing mammogram than those who live in towns or villages. Results revealed negative perceptions and limited knowledge of study participants on breast cancer and breast cancer screening. The most commonly reported barriers for women who never underwent screening were: fear of results (63.8%); no support from surrounding environment (59.7); cost of the test (53.4%); and religious belief, i.e. Qadaa Wa Qadar (51.1%). Conclusions: In the absence of regular systematic screening for breast cancer in Jordan, the uptake of this preventive service is very low. It is essential for the country of Jordan to work on applying regular systematic mammography screening for breast cancer. Additionally, there is a need for improvement in the current health promotion programmes targeting breast cancer screening. Other areas that could be targeted in future initiatives in this field include access to screening in rural areas and removal of current barriers.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.9
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• pp.611-615
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• 2001

Y$_2$O$_3$ thin films have been proposed as a buffering insulator of metal/ferroelectric/insulator/semiconductor field effect transistor(MFISFET)-type ferroelectric random access memory (FRAM). In this study, $Y_2$O$_3$ thin films were etched with inductively coupled plasma(ICP). The etch rates of $Y_2$O$_3$ and YMnO$_3$, and the selectivity of $Y_2$O$_3$ to YMnO$_3$ were investigated by varying Cl$_2$/(Cl$_2$＋Ar) gas mixing ratio. The maximum etch rate of $Y_2$O$_3$, and the selectivity of $Y_2$O$_3$ to YMnO$_3$ were 302$\AA$/min, and 2.4 at Cl$_2$/(Cl$_2$＋Ar) gas mixing ratio of 0.2 respectively. Optical emission spectroscopy(OES) was used to understand the effects of gas combination on the etch rate of $Y_2$O$_3$ thin film. The surface reaction of the etched $Y_2$O$_3$ thin films was investigated by x-ray photoelectron spectroscopy (XPS). XPS analysis confirmed that there was chemical reaction between Y and Cl. This result was confirmed by secondary ion mass spectroscopy(SIMS) analysis.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.4
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• pp.69-74
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• 2010

A new package substrate for dynamic random access memory(DRAM) devices has been developed using selective aluminum anodization. Unlike the conventional substrate structure commonly made by laminating epoxy-based core and copper clad, this substrate consists of bottom aluminum, middle anodic aluminum oxide and top copper. Anodization process on the aluminum substrate provides thick aluminum oxide used as a dielectric layer in the package substrate. Placing copper traces on the anodic aluminum oxide layer, the resulting two-layer metal structure is completed in the package substrate. Selective anodization process makes it possible to construct a fully filled via structure. Also, putting vias directly in the bonding pads and the ball pads in the substrate design, via in pad structure is applied in this work. These arrangement of via in pad and two-layer metal structure make routing easier and thus provide more design flexibility. In a substrate design, all signal lines are routed based on the transmission line scheme of finite-width coplanar waveguide or microstrip with a characteristic impedance of about $50{\Omega}$ for better signal transmission. The property and performance of anodic alumina based package substrate such as layer structure, design method, fabrication process and measurement characteristics are investigated in detail.

• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.104-109
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• 2005

To study the role of PbO as the buffer layer, Pt/PZT/PbO/Si with the MFIS structure was deposited on the p-type (100) Si substrate by the r.f. magnetron sputtering with $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ and PbO targets. When PbO buffer layer was inserted between the PZT thin film and the Si substrate, the crystallization of the PZT thin films was considerably improved and the processing temperature was lowered. From the result of an X-ray Photoelectron Spectroscopy (XPS) depth profile result, we could confirm that the substrate temperature for the layer of PbO affects the chemical states of the interface between the PbO buffer layer and the Si substrate, which results in the inter-diffusion of Pb. The MFIS with the PbO buffer layer show the improved electric properties including the high memory window and low leakage current density. In particular, the maximum value of the memory window is 2.0V under the applied voltage of 9V for the Pt/PZT(200 nm, $400^{\circ}C)/PbO(80 nm)/Si$ structures with the PbO buffer layer deposited at the substrate temperature of $300^{\circ}C$.