• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.390-390
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• 2012

Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.

• 한국통신학회논문지
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• 제40권10호
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• pp.1889-1899
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• 2015

본 논문은 위성 랜덤 액세스 채널에서 데이터의 신속한 전송을 위한 다중 슬롯 예약 기법을 제안한다. R-CRDSA(Reservation scheme with Contention Resolution Diversity Slotted ALOHA)에서는 각 단말이 하나의 프레임에서 하나의 슬롯만을 예약하여 사용하기 때문에 트래픽 부하가 낮은 상황에서 많은 슬롯이 낭비되는 문제가 발생하고, 상대적으로 크기가 큰 데이터를 전송하려는 위성 단말은 사용되지 않는 슬롯이 있다고 하더라도 여러 개의 프레임을 사용하여 데이터를 전송하기 때문에 지연시간이 증가한다. 본 논문에서 제안하는 다중 슬롯 예약 기법에서 각 단말은 자신의 패킷과 함께 데이터의 크기를 함께 전송하며 각 단말에서 발생한 데이터의 크기와 슬롯 예약 상태를 고려하여 다수의 슬롯을 예약하여 데이터를 전송한다. 따라서 각 위성단말은 다수의 슬롯을 예약하여 데이터를 전송하기 때문에 기존 슬롯 예약 기반의 위성 랜덤액세스기법에 비해 적은 수의 프레임을 사용하여 자신의 데이터를 전송할 수 있다. 또한 본 논문은 모의실험을 통해 기존 슬롯 예약 기반의 위성 랜덤 액세스 기법 대비 제안 기법의 성능 향상을 확인하였다.

• 한국전기전자재료학회논문지
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• 제33권6호
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• pp.454-459
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• 2020

In this study, a TiO₂/TiO_2-x-based resistance variable memory was fabricated using a DC/RF magnetron sputtering system and ALD. In order to analyze the effect of oxygen plasma treatment on the performance of resistance random access memory (ReRAM), the TiO₂/TiO_2-x-based ReRAM was evaluated by applying RF power to the TiO_2-x oxygen-holding layer at 30, 60, 90, 120, and 150 W, respectively. The ReRAM was fabricated, and the electrical and surface area performances were compared and analyzed. In the case of ReRAM without oxygen plasma treatment, the I-V curve had a hysteresis curve shape, but the width was very small, with a relatively high surface roughness of the oxygen-retaining layer. However, in the case of oxygen plasma treatment, the HRS/LRS ratio for the I-V curve improved as the applied RF power increased; stable improvement was also noted in the surface roughness of the oxygen-retaining layer. It was confirmed that the low voltage drive was not smooth due to charge trapping in the oxygen diffusion barrier layer owing to the high intensity ReRAM applied with an RF power of approximately 150 W.

• 한국정보통신학회논문지
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• 제23권10호
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• pp.1254-1260
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• 2019

최근 5세대 이동통신 시스템은 4차 산업혁명의 핵심 요소로 큰 주목을 받고 있다. 본 논문에서는, 이동통신 시스템에서 사물인터넷 시나리오를 지원하기 위해 파일럿 지원 기회적 전송 기반의 새로운 임의 접속 기법을 제안한다. 제안하는 기법은 임의 접속 절차 3단계에서 데이터 패킷을 전송할 때 다수 개의 상향링크 자원 중 하나의 자원을 임의로 선택하여 기회적 전송을 하는 동시에 데이터 복호를 위해 각 데이터 패킷에 다중화하는 상향링크 파일럿 신호 또한 임의로 선택하게 함으로써 패킷 충돌 확률을 획기적으로 낮추는 것을 주요 특징으로 한다. 확률 모델을 이용하여 패킷 충돌 확률 및 상향링크 자원 효율 관점에서 제안한 기법을 수학적으로 분석 하고, 모의실험을 통해 분석의 유효성을 확인하고 제안 기법의 우수성을 입증한다.

• 한국재료학회지
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• 제32권9호
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• pp.384-390
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• 2022

A spin coating process for RRAM, which is a TiN/TiO₂/FTO structure based on a PTC sol solution, was developed in this laboratory, a method which enables low-temperature and eco-friendly manufacturing. The RRAM corresponds to an OxRAM that operates through the formation and extinction of conductive filaments. Heat treatment was selected as a method of controlling oxygen vacancy (V_O), a major factor of the conductive filament. It was carried out at 100 ℃ under moisture removal conditions and at 300 ℃ and 500 ℃ for excellent phase stability. XRD analysis confirmed the anatase phase in the thin film increased as the heat treatment increased, and the Ti³⁺ and OH- groups were observed to decrease in the XPS analysis. In the I-V analysis, the device at 100 ℃ showed a low primary SET voltage of 5.1 V and a high ON/OFF ratio of 10⁴. The double-logarithmic plot of the I-V curve confirmed the device at 100 ℃ required a low operating voltage. As a result, the 100 ℃ heat treatment conditions were suitable for the low voltage driving and high ON/OFF ratio of TiN/TiO₂/FTO RRAM devices and these results suggest that the operating voltage and ON/OFF ratio required for OxRAM devices used in various fields under specific heat treatment conditions can be compromised.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 ICEIC The International Conference on Electronics Informations and Communications
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• pp.35-38
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• 2004

The MAC protocol of HIPERLAN/2 is based on TDMA/TDD and AP (Access Point) can dynamically allocate the number of RCHs (Random CHannels). We propose a dynamic random channel allocation scheme improved by limiting the number of minimum RCHs. On a simulated scenario adopted practical Internet traffic, the proposed scheme is shown to achieve over $19\%$ lower delay than previously studied algorithm. This study will be a first step towards designing scope of RCHs for high-performance wireless packet network

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.410-410
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• 2013

Next-generation nonvolatile memory (NVM) has attracted increasing attention about emerging NVMs such as ferroelectric random access memory, phase-change random access memory, magnetic random access memory and resistance random access memory (RRAM). Previous studies have demonstrated that RRAM is promising because of its excellent properties, including simple structure, high speed and high density integration. Many research groups have reported a lot of metal oxides as resistive materials like TiO2, NiO, SrTiO3 and ZnO [1]. Among them, the ZnO-based film is one of the most promising materials for RRAM because of its good switching characteristics, reliability and high transparency [2]. However, in many studies about ZnO-based RRAMs, there was a problem to get lower current level for reducing the operating power dissipation and improving the device reliability such an endurance and an retention time of memory devices. Thus in this paper, we investigated that highly reproducible bipolar resistive switching characteristics of W doped ZnO RRAM device and it showed low resistive switching current level and large ON/OFF ratio. This may be caused by the interdiffusion of the W atoms in the ZnO film, whch serves as dopants, and leakage current would rise resulting in the lowering of current level [3]. In this work, a ZnO film and W doped ZnO film were fabricated on a Si substrate using RF magnetron sputtering from ZnO and W targets at room temperature with Ar gas ambient, and compared their current levels. Compared with the conventional ZnO-based RRAM, the W doped ZnO ReRAM device shows the reduction of reset current from ~$10^{-6}$ A to ~$10^{-9}$ A and large ON/OFF ratio of ~$10^3$ along with self-rectifying characteristic as shown in Fig. 1. In addition, we observed good endurance of $10^3$ times and retention time of $10^4$ s in the W doped ZnO ReRAM device. With this advantageous characteristics, W doped ZnO thin film device is a promising candidates for CMOS compatible and high-density RRAM devices.

• 한국통신학회논문지
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• 제42권3호
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• pp.554-561
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• 2017

IoT(Internet of Things) 응용 디바이스는 실내, 지하 등의 신호가 도달하기 어려운 환경에 있는 경우가 많을 뿐만 아니라 송신 출력도 낮으므로 기지국이 낮은 수신 감도에서도 수신이 가능하도록 설계되어야 한다. 이를 위해 채널 상태가 좋지 않은 디바이스는 낮은 부호화율이나 반복전송 등을 이용하여 낮은 데이터 전송률로 전송할 수 있다. 채널 상태에 따라 커버리지 클래스를 나누고 채널 상태에 맞는 전송 속도를 사용할 때 커버리지 클래스마다 패킷의 길이가 다를 수 있으며 슬롯 알로하 랜덤 접속의 성능이 떨어질 수 있다. 특히 서로 다른 커버리지 클래스의 디바이스들이 공유된 자원을 사용할 때는 채널 상태가 나쁜 디바이스의 성능이 떨어질 수 있으며, 반대로 커버리지 클래스마다 분리된 자원을 사용할 때는 한 자원 영역에 랜덤 액세스를 하는 디바이스가 많아지는 혼잡이 발생할 수 있다는 문제가 있다. 본 논문에서는 이를 보완할 수 있는 방법들을 제안한다. 이 연구는 MTC 디바이스를 중심으로 연구하였으며, 추후 발전 가능성이 높은 부분이라 생각된다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 I
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• pp.49-52
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• 2003

IEEE 802.11 MAC uses a distributed coordination function (DCF) known as carrier sense multiple access with collision avoidance (CSMA/CA) for medium access. Random back-off algorithm helps to avoid the collision. This paper proposes virtual back-off and modified back-off algorithm for reduce a waiting time by back-off and reduce the collision. The modified DCF is consisted of these two algorithms. We expect to reduce the average waiting time of each transmission by using the modified DCF algorithm.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2004년도 ICCAS
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• pp.350-353
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• 2004

The increasing use of Ethernet-TCP/IP network in industry has led to the growing interest in its reliability in real-time applications such as automated manufacturing systems and process control systems. However, stochastic behavior of its medium access scheme makes it inadequate for time-critical applications. In order to guarantee hard real-time communication service in Ethernet-TCP/IP network, we proposed an algorithm running over TCP/IP protocol stack without modification of protocols. In this paper, we consider communication services guaranteeing deadlines of periodic real-time messages over MAC protocols that have unbounded medium access time. We propose a centralized token scheduling scheme for multiple access networks. The token is used to allow a station to transmit its message during the time amount that is appended to the token. The real-time performance of the proposed algorithm has been described.