• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.3
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• pp.10-18
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• 2003

In this paper, we propose an optical encryption system based on the encryption of information using the phase component of a wavefront and orthogonal polarization in a Mach-Zehnder interferometer. Since the incoherence of the two perpendicularly polarized lights removes interference component, the decrypted image is stable. In encryption process, the original image is converted into an image having random polarization state by the relative phase difference of horizontal polarization and vertical polarization, so we cannot obtain the original information from the random polarization distribution. To decrypt an Image, the random polarization distribution of encrypted image is divided into two orthogonal components, then key image must be placed on vertical path of Mach-Zehnder interferometer. The decrypted image is obtained In the form of intensity by use of an analyzer.

• Korean Journal of Optics and Photonics
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• v.14 no.4
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• pp.449-453
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• 2003

In a broadband erbium-doped fiber source for fiber optic gyroscope, a pump-polarization scrambling scheme is used to suppress the polarization dependence of the source mean wavelength. The degree of polarization of the pump is reduced to 1.4% by applying proper modulation depth to the polarization modulator where 10 m-long single-mode fiber is wound on a cylindrical PZT. In the case of using the pump-polarization scrambler as well as the output depolarizer, the mean-wavelength variations due to the random change of polarization are measured to be less than our measurement limit of 5 ppm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.201-204
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• 1999

Polarization mode dispersion (PMD) restrict the bend-width of single mode optical filer, and it is important parameter in the optical fiber having long-length. Although fiber has perfect circular symmetry, fiber bending, twisting and laws governing manufacture cause additional Polarization mode dispersion. The effect of polarization mode dispersion in general single mode fiber of long length is discussed in this paper. Measurement of PMD with random mode coupling were conducted in two kind of fibers using different laws governing manufacture and interferometric method.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.73-77
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• 2023

In this study, we developed a Multi-level FeRAM (Ferroelectrics random access memory) device utilizing different ferroelectric materials and analyzed its operation through C-V analysis using simulations. To achieve Multi-level operation, we proposed an MFM (Multi-Ferroelectric Material) structure by depositing two different ferroelectric materials with distinct properties horizontally on the same bottom electrode and subsequently adding a gate electrode on top. By analyzing C-V peaks based on the polarization phenomenon occurring under different voltage conditions for the two materials, we confirmed the feasibility of achieving Multi-level operation, where either one or both of the materials can be polarized. Furthermore, we validated the process for implementing the proposed structure using semiconductor fabrication through process simulations. These results signify the significance of the new structure as it allows storing multiple states in a single memory cell, thereby greatly enhancing memory integration.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.6
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• pp.1175-1177
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• 2011

The SBN thin films were deposited on Pt/Ti/$SiO_2$/Si and p-type Si(100) substrate by rf magnetron sputtering method using $Sr_{0.7}Bi_{2.3}Nb_2O_9$ ceramic target. SBN thin films deposited were annealed at 600~800[$^{\circ}C$] by furnace in oxygen atmosphere during 40min. The polarization characteristics have been investigated to confirm the possibility of the SBN thin films for the application to destructive read out ferroelectric random access memory. The maximum remanent polarization and the coercive voltage are 0.6[${\mu}C/cm^2$], 1.2[V] respectively at annealing temperature of 800[$^{\circ}C$]. The leakage current density was the $2.57{\times}10^{-6}[A/cm^2]$ at an applied voltage of 5[V] at annealing temperature of 650[$^{\circ}C$]. Also, the fatigue characteristics of SBN thin films did not change up to $10^8$ switching cycles.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.11 no.11
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• pp.5610-5624
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• 2017

A novel scheme based on polarization modulation and the weighted fractional Fourier transform (PM-WFRFT) is proposed in this paper to enhance the physical layer security of dual-polarized satellite systems. This scheme utilizes the amplitude and phase of the carrier as information-bearing parameters to transmit the normal signal and conceals the confidential information in the carrier's polarization state (PS). After being processed by WFRFT, the characteristics of the transmit signal (including amplitude, phase and polarization state) vary randomly and in nearly Gaussian distribution. This makes the signal very difficult for an eavesdropper to recognize or capture. The WFRFT parameter is also encrypted by a pseudo-random sequence and updated in real time, which enhances its anti-interception performance. Furthermore, to prevent the polarization-based impairment to PM-WFRFT caused by depolarization in the wireless channel, two components of the polarized signal are transmitted respectively in two symbol periods; this prevents any mutual interference between the two orthogonally polarized components. Demodulation performance in the system was also assessed, then the proposed scheme was validated with a simulated dual-polarized satellite system.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.4
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• pp.543-548
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• 2018

Ferroelectric $Bi_4Ti_3O_{12}$ films were deposited on $SrTiO_3(100)$ and Si(100) substrate by using conductive $SrRuO_3$ films as underlayer, and their ferroelectric and electrical properties were investigated depending on crystal structure and orientation. C-axis oriented $Bi_4Ti_3O_{12}$ films were grown on well lattice-matched pseudo-cubic $SrRuO_3$ films deposited on $SrTiO_3(100)$ substrate, while random-oriented polycrystalline $Bi_4Ti_3O_{12}$ films were grown on $SrRuO_3$ films deposited on Si(100) substrate. The random-oriented polycrystalline film showed a good ferroelectric hysteresis property with remanent polarization ($P_r$) of $9.4{\mu}C/cm^2$ and coercive field ($E_c$) of 84.9 kV/cm, while the c-axis oriented film showed $P_r=0.64{\mu}C/cm^2$ and $E_c=47kV/cm$ in polarizaion vs electric field curve. The c-axis oriented $Bi_4Ti_3O_{12}$ film showed a dielectric constant of about 150 and lower thickness dependence in dielectric constant compared to the random-oriented film. Furthermore, the c-axis oriented $Bi_4Ti_3O_{12}$ film showed leakage current lower than that of the polycrystalline film. The difference of ferroelectric properties in two films was explained from the viewpoint of depolarization effect due to orientation of spontaneous polarization and layered crystal structure of bismuth-base ferroelectric oxide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.135-136
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• 2006

Bismuth titanate ($Bi_4Ti_3O_{12}$, BIT) thin film has been studied intensively in the past decade due to its large remanent polarization, low crystallization temperature, and high Curie temperature. Substitution of various trivalent rare-earth cations (such as $La^{3+}$, $Nd^{3+}$, $Sm^{3+}$ and $Pr^{3+}$) in the BIT structure is known to improve its ferroelectric properties, such as remanent polarization and fatigue characteristics. Among them, neodymuim-substituted bismuth titanate, ((Bi, Nd)$_4Ti_3O_{12}$, BNT) has been receiving much attention due to its larger ferroelectricity. In this study, Ferroelectric $Bi_{3.3}Nd_{0.7}Ti_3O_{12}$ thin films were successfully fabricated by liquid delivery MOCVD process onto Pt(111)/Ti/$SiO_2$/Si(l00) substrates. Fabricated polycrystailine BNT thin films were found to be random orientations, which were confirmed by X-ray diffraction and scanning electron microscope analyses. The remanent polarization of these films increased with increase in annealing temperature. And the film also demonstrated fatigue-free behavior up to $10^{11}$ read/write switching cycles. These results indicate that the randomly oriented BNT thin film is a promising candidate among ferroelectric materials useful for lead-free nonvolatile ferroelectric random access memory applications.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.14 no.9
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• pp.3907-3923
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• 2020

An enhanced irregular repetition slotted ALOHA (IRSA) protocol is proposed by using polarization characteristic of satellite link and MIMO detection in low earth orbit (LEO) satellite networks, which is dubbed polarized MIMO IRSA (PM-IRSA). In the proposed scheme, one or two packets in one slot can be decoded by employing polarized MIMO detection, and more than two collided packets in multiple slots which can construct the virtual MIMO model can be decoded by the MIMO detection algorithm. The performance of the proposed scheme is analyzed with the density evolution (DE) approach and the degree distribution is optimized to maximize the system throughput by using a differential evolution. Numerical results certify our analysis and show that the normalized throughput of the proposed PM-IRSA can achieve 1.89 bits/symbol.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.37-37
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• 2003

Ferroelectric random acess memories (FeRAMs) 재료로 주목받고 있는 강유전 물질은 이미 여러 해 전부터 많은 물질들에 대해 연구가 진행되어 왔다. 그 중 낮은 공정 온도를 가지며 큰 remanent polarization 값을 갖는 lead zirconium titanate (PZT) 박막에 대해 많은 연구가 진행되고 있다. 하지만 Pt 기판위에 증착된 PZT 박막은 높은 피로 현상을 보이는 문제가 있다. 최근 Pulsed laser deposition이나 metal-organic vapor phase epitaxy (MOVPE) 등의 방법에 의해 epitaxial substituted-$Bi_4Ti_3O_{12}$ (La, Nd) 박막에 대해 보고가 되고 있다. 본 연구에서는 높은 remanent polarization 값을 갖는 $(Bi,Ce)_4Ti_3O_{12}$ (BCT) 박막을 pulsed laser deposition 방법을 사용하여 증착하였다. 또한 Bismuth의 양을 변화시켜 Bismuth의 양에 따른 remanent polarization의 변화를 확인하여 보았다. 사용된 기판은 Pt/$TiO_2$/$SiO_2$/Si 기판을 사용하였다.