• 대한전자공학회논문지SD
• /
• 제40권3호
• /
• pp.10-18
• /
• 2003

본 논문에서는 마흐-젠더 간섭계에서 진행파의 위상정보와 직교 편광을 이용하여 광학적 암호화 시스템을 제안하였다. 두 개의 서로 직교편광의 가간섭성에 의해 간섭현상이 제거되기 때문에 복호 영상이 안정하다. 암호화 과정에서는 원 영상이 수직편광과 수평편광간의 상대적인 위상차에 의해 랜덤한 편광상태를 가지는 영상으로 암호화 된다. 따라서 랜덤한 편광분포로부터 원 영상의 정보를 알 수 없다. 영상을 복호화하기 위해서는 암호화된 영상의 랜덤한 편광분포를 서로 직교하는 두 성분으로 나누고 키영상을 간섭계에 수직 경로에 위치시킨다. 복호 영상은 검광기를 사용하여 세기형태로 재생하였다.

• 한국광학회지
• /
• 제14권4호
• /
• pp.449-453
• /
• 2003

자이로스코프용 광대역폭 erbium 첨가 광섬유 광원에서 중심파장의 편광의존성을 억제하기 위하여 펌프광의 편광을 변조함으로써 스크램블링하는 방식을 사용하였다. 원통형 PZT에 광섬유를 감은 형태의 편광변조기에 적정진폭의 변조를 가함으로써 펌프광의 편광도(시간평균치)를 1.4%까지 낮출 수 있었다. 펌프 편광 스크램블러와 출력단 depolarizer를 함께 사용한 경우에 임의의 편광변화에 대한 광원의 중심파장 변화가 측정기의 측정한계(∼5 ppm) 이하로 관찰되었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
• /
• pp.201-204
• /
• 1999

Polarization mode dispersion (PMD) restrict the bend-width of single mode optical filer, and it is important parameter in the optical fiber having long-length. Although fiber has perfect circular symmetry, fiber bending, twisting and laws governing manufacture cause additional Polarization mode dispersion. The effect of polarization mode dispersion in general single mode fiber of long length is discussed in this paper. Measurement of PMD with random mode coupling were conducted in two kind of fibers using different laws governing manufacture and interferometric method.

• 마이크로전자및패키징학회지
• /
• 제30권3호
• /
• pp.73-77
• /
• 2023

본 연구에서는 서로 다른 강유전성 물질을 활용하여 Multi-level FeRAM (Ferroelectrics random access memory) 소자에 대한 구조를 제시하였으며, 이를 검증하기 위해 Simulation을 통한 C-V 분석을 수행하였습니다. Multi-level 소자를 구현하기 위해 두 가지 서로 다른 물성을 가진 강유전체를 동일한 하부 전극 위에 나란히 증착하고, 이후 게이트 전극을 위에 올린 MFM (Multi-Ferroelectric Material) 구조를 제안하였습니다. 두 강유전체가 서로 다른 전압 조건에서 분극 현상 (Polarization)을 나타내는 것을 바탕으로, 두 개의 물질 중 한 개만 polarization 되었을 때와 두 개 모두 polarization 되었을 때의 상황을 C-V peak 분석을 통해 확인하여 Multi-level 동작을 구현할 수 있음을 확인하였습니다. 더불어, 제시한 구조를 반도체 제조 공정을 활용하여 구현하는 방법을 공정 simulation을 통해 검증하였습니다. 이러한 결과는 하나의 메모리 셀에서 여러 상태 값을 저장할 수 있음을 의미하며, 이는 메모리의 집적도를 크게 향상시킬 수 있는 새로운 구조체로서의 가능성을 의미합니다.

• 전기학회논문지
• /
• 제60권6호
• /
• pp.1175-1177
• /
• 2011

The SBN thin films were deposited on Pt/Ti/$SiO_2$/Si and p-type Si(100) substrate by rf magnetron sputtering method using $Sr_{0.7}Bi_{2.3}Nb_2O_9$ ceramic target. SBN thin films deposited were annealed at 600~800[$^{\circ}C$] by furnace in oxygen atmosphere during 40min. The polarization characteristics have been investigated to confirm the possibility of the SBN thin films for the application to destructive read out ferroelectric random access memory. The maximum remanent polarization and the coercive voltage are 0.6[${\mu}C/cm^2$], 1.2[V] respectively at annealing temperature of 800[$^{\circ}C$]. The leakage current density was the $2.57{\times}10^{-6}[A/cm^2]$ at an applied voltage of 5[V] at annealing temperature of 650[$^{\circ}C$]. Also, the fatigue characteristics of SBN thin films did not change up to $10^8$ switching cycles.

• KSII Transactions on Internet and Information Systems (TIIS)
• /
• 제11권11호
• /
• pp.5610-5624
• /
• 2017

A novel scheme based on polarization modulation and the weighted fractional Fourier transform (PM-WFRFT) is proposed in this paper to enhance the physical layer security of dual-polarized satellite systems. This scheme utilizes the amplitude and phase of the carrier as information-bearing parameters to transmit the normal signal and conceals the confidential information in the carrier's polarization state (PS). After being processed by WFRFT, the characteristics of the transmit signal (including amplitude, phase and polarization state) vary randomly and in nearly Gaussian distribution. This makes the signal very difficult for an eavesdropper to recognize or capture. The WFRFT parameter is also encrypted by a pseudo-random sequence and updated in real time, which enhances its anti-interception performance. Furthermore, to prevent the polarization-based impairment to PM-WFRFT caused by depolarization in the wireless channel, two components of the polarized signal are transmitted respectively in two symbol periods; this prevents any mutual interference between the two orthogonally polarized components. Demodulation performance in the system was also assessed, then the proposed scheme was validated with a simulated dual-polarized satellite system.

• 전기학회논문지
• /
• 제67권4호
• /
• pp.543-548
• /
• 2018

Ferroelectric $Bi_4Ti_3O_{12}$ films were deposited on $SrTiO_3(100)$ and Si(100) substrate by using conductive $SrRuO_3$ films as underlayer, and their ferroelectric and electrical properties were investigated depending on crystal structure and orientation. C-axis oriented $Bi_4Ti_3O_{12}$ films were grown on well lattice-matched pseudo-cubic $SrRuO_3$ films deposited on $SrTiO_3(100)$ substrate, while random-oriented polycrystalline $Bi_4Ti_3O_{12}$ films were grown on $SrRuO_3$ films deposited on Si(100) substrate. The random-oriented polycrystalline film showed a good ferroelectric hysteresis property with remanent polarization ($P_r$) of $9.4{\mu}C/cm^2$ and coercive field ($E_c$) of 84.9 kV/cm, while the c-axis oriented film showed $P_r=0.64{\mu}C/cm^2$ and $E_c=47kV/cm$ in polarizaion vs electric field curve. The c-axis oriented $Bi_4Ti_3O_{12}$ film showed a dielectric constant of about 150 and lower thickness dependence in dielectric constant compared to the random-oriented film. Furthermore, the c-axis oriented $Bi_4Ti_3O_{12}$ film showed leakage current lower than that of the polycrystalline film. The difference of ferroelectric properties in two films was explained from the viewpoint of depolarization effect due to orientation of spontaneous polarization and layered crystal structure of bismuth-base ferroelectric oxide.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.135-136
• /
• 2006

Bismuth titanate ($Bi_4Ti_3O_{12}$, BIT) thin film has been studied intensively in the past decade due to its large remanent polarization, low crystallization temperature, and high Curie temperature. Substitution of various trivalent rare-earth cations (such as $La^{3+}$, $Nd^{3+}$, $Sm^{3+}$ and $Pr^{3+}$) in the BIT structure is known to improve its ferroelectric properties, such as remanent polarization and fatigue characteristics. Among them, neodymuim-substituted bismuth titanate, ((Bi, Nd)$_4Ti_3O_{12}$, BNT) has been receiving much attention due to its larger ferroelectricity. In this study, Ferroelectric $Bi_{3.3}Nd_{0.7}Ti_3O_{12}$ thin films were successfully fabricated by liquid delivery MOCVD process onto Pt(111)/Ti/$SiO_2$/Si(l00) substrates. Fabricated polycrystailine BNT thin films were found to be random orientations, which were confirmed by X-ray diffraction and scanning electron microscope analyses. The remanent polarization of these films increased with increase in annealing temperature. And the film also demonstrated fatigue-free behavior up to $10^{11}$ read/write switching cycles. These results indicate that the randomly oriented BNT thin film is a promising candidate among ferroelectric materials useful for lead-free nonvolatile ferroelectric random access memory applications.

• KSII Transactions on Internet and Information Systems (TIIS)
• /
• 제14권9호
• /
• pp.3907-3923
• /
• 2020

An enhanced irregular repetition slotted ALOHA (IRSA) protocol is proposed by using polarization characteristic of satellite link and MIMO detection in low earth orbit (LEO) satellite networks, which is dubbed polarized MIMO IRSA (PM-IRSA). In the proposed scheme, one or two packets in one slot can be decoded by employing polarized MIMO detection, and more than two collided packets in multiple slots which can construct the virtual MIMO model can be decoded by the MIMO detection algorithm. The performance of the proposed scheme is analyzed with the density evolution (DE) approach and the degree distribution is optimized to maximize the system throughput by using a differential evolution. Numerical results certify our analysis and show that the normalized throughput of the proposed PM-IRSA can achieve 1.89 bits/symbol.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
• /
• pp.37-37
• /
• 2003

Ferroelectric random acess memories (FeRAMs) 재료로 주목받고 있는 강유전 물질은 이미 여러 해 전부터 많은 물질들에 대해 연구가 진행되어 왔다. 그 중 낮은 공정 온도를 가지며 큰 remanent polarization 값을 갖는 lead zirconium titanate (PZT) 박막에 대해 많은 연구가 진행되고 있다. 하지만 Pt 기판위에 증착된 PZT 박막은 높은 피로 현상을 보이는 문제가 있다. 최근 Pulsed laser deposition이나 metal-organic vapor phase epitaxy (MOVPE) 등의 방법에 의해 epitaxial substituted-$Bi_4Ti_3O_{12}$ (La, Nd) 박막에 대해 보고가 되고 있다. 본 연구에서는 높은 remanent polarization 값을 갖는 $(Bi,Ce)_4Ti_3O_{12}$ (BCT) 박막을 pulsed laser deposition 방법을 사용하여 증착하였다. 또한 Bismuth의 양을 변화시켜 Bismuth의 양에 따른 remanent polarization의 변화를 확인하여 보았다. 사용된 기판은 Pt/$TiO_2$/$SiO_2$/Si 기판을 사용하였다.