• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.509-512
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• 1999

Ferroelectric Sr$_2$(Nb, Ta)$_2$O$_{7}$(SNTO), La$_2$Ti$_2$O$_{7}$(LTO) thin films were prepared by sol-gel processes. SNTO, LTO thin films were spin-coated on Pt/TiO$_2$/SiO$_2$/Si(100). Pt/Ti/SiO$_2$/Si(100). PT/ZrO$_2$/SiO$_2$/Si(100) substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. Dielectric and other relevant electrical properties were measured and the results showed a little possibility in ferroelectric gate random access memory devices.ces.

• 한국정보처리학회:학술대회논문집
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• 한국정보처리학회 2013년도 춘계학술발표대회
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• pp.21-23
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• 2013

Static Random Access Memory (SRAM) using CMOS technology has many advantages. It does not need to refresh every certain time, as a result, the speed of SRAM is faster than Dynamic Random Access Memory (DRAM). This is the reason why SRAM is widely used in almost processors and system on chips (SoC) which require high processing speed. Two basic operations of SRAM are read and write. We consider two basic factors, including the accuracy of read and write operations and the speed of these operations. In our paper, we propose the read and write assist circuits for SRAM. By adding a power control circuit in SRAM, the write operation performed successfully with low error ratio. Moreover, the value in memory cells can be read correctly using the proposed pre-charge method.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.28.2-28.2
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• 2011

Resistance random access memory (ReRAM) is a promising candidate for next-generation nonvolatile memory because of its advantageous qualities such as simple structure, superior scalability, fast switching speed, low-power operation, and nondestructive readout. We investigated the resistive switching behavior of tantalum oxide that has been widely used in dynamic random access memories (DRAM) in the present semiconductor industry. As a result, it possesses full compatibility with the entrenched complementary metal-oxide-semiconductor processes. According to previous studies, TiN is a good oxygen reservoir. The TiN top electrode possesses the specific properties to control and modulate oxygen ion reproductively, which results in excellent resistive switching characteristics. This study presents fully room temperature fabricated the TiN/$TaO_x$/Pt devices and their electrical properties for nonvolatile memory application. In addition, we investigated the TiN electrode dependence of the electrical properties in $TaO_x$ memory devices. The devices exhibited a low operation voltage of 0.6 V as well as good endurance up to $10^5$ cycles. Moreover, the benefits of high devise yield multilevel storage possibility make them promising in the next generation nonvolatile memory applications.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권1호
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• pp.31-38
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• 2016

A novel self-reference sense amplifier with parallel reading during writing operation is proposed. Read access time is improved compared to conventional self-reference scheme with fast operation speed by reducing operation steps to 1 for read operation cycle using parallel reading scheme, while large sense margin competitive to conventional destructive scheme is obtained by using self-reference scheme. The simulation was performed using standard $0.18{\mu}m$ CMOS process. The proposed self-reference sense amplifier improved not only the operation speed of less than 20 ns which is comparable to non-destructive sense amplifier, but also sense margin over 150 mV which is larger than conventional sensing schemes. The proposed scheme is expected to be very helpful for engineers for developing MRAM technology.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 somma/kms meeting
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• pp.49-49
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• 2003

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.136.1-136.1
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• 2007

• 전자공학회지
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• 제28권1호
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• pp.60-65
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• 2001

• 세라미스트
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• 제4권2호
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• pp.79-89
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• 2001

• E2M - 전기 전자와 첨단 소재
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• 제13권11호
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• pp.12-21
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• 2000

• 한국멀티미디어학회논문지
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• 제14권11호
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• pp.1401-1408
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• 2011

본 논문에서는 영상처리용 16개의 처리기를 위한 다중접근기억장치(Multi-Access Memory System) 및 병렬처리기의 칩을 설계하였다. 다중접근기억장치는 병렬접근 메모리 시스템의 한 종류로서 영상의 픽셀 데이터값에 8가지 타입으로 동시 접근이 가능하다. 또한 일정한 간격을 두고 픽셀 데이터값에 접근하는 것이 가능하다. 다중접근기억장치가 내장된 병렬처리기는 실제로 2003년에 구현되어진 적이 있다. 하지만 고해상도 영상을 실시간으로 처리하기에는 그 성능이 미치지 못하였다. 이에 본 논문에서는 이전의 시스템의 메모리 모듈(Memory Module)과 처리기(Processing Element)를 추가 확장하여 보다 개선된 병렬처리 시스템을 설계하였다. 이 시스템은 이전의 시스템보다는 3배, 시리얼 시스템보다는 6배 빠른 속도로 모폴로지컬 클로징(Morphological closing) 알고리즘의 수행이 가능하다.