• Macromolecular Research
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• v.15 no.4
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• pp.357-362
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• 2007

Polyimide/carbon nanotube (CNT) composite films, for potential use in high performance microelectronics and aerospace applications, were prepared by mixing a polyisoimide (PII) solution and a CNT suspension in NMP, followed by casting, evaporation and thermal imidization. The CNTs were modified by a nitric acid treatment to improve the thermal and electrical properties, as well as to provide good dispersion of the CNTs in a polymer matrix. The formation of functional groups on the modified CNT was confirmed by Raman spectroscopy. Scanning electron microscopy revealed the modified CNTs to be well dispersed in the polyimide matrix, with a uniform diameter of ca. 50 nm. The thermal stability of the films containing the CNTs was improved due to the enhanced interfacial interaction and good dispersion between the polyimide matrix and modified CNTs. In addition, the thermal expansion coefficient of the composites films was slightly decreased, but the dielectric constants increased linearly with increasing CNT content.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.859-862
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• 2003

Well-aligned multiwall carbon nanotubes (MWCNTs) were prepared at low temperature of 400 $^{\circ}C$ by utilizing a radio frequency plasma-enhanced chemical vapor deposition (rf-PECVD) system. The MWCNTs were treated by an external rf plasma source and an ultra-violet laser in order to modify structural defect of carbon nanotube and to ablate possible contamination on carbon nanotube surface. Structural properties of carbon nanotubes were investigated by using a scanning electron microscopy (SEM), Raman spectroscopy, Fourier transformer Infrared spectroscopy (FTIR) and transmission electron microscope (TEM). In addition, the emission properties of the MWNTs were measured for the application of field emission display (FED) in near future. Various post treatments were found to improve the field emission property of carbon nanotubes.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1514-1515
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• 1998

Diamond thin films were deposited on n-type (100) Si wafers from $H_2-CH_4$ gas mixture by rf PACVD. Prior to deposition, mechanical scratching was done to improve density of nucleation sites with diamond paste of 3${\mu}m$. The microstructure of deposited diamond thin films was studied by using the following conditions : discharge power of 500W, $H_2$ flow rate of 50sccm, reaction pressure of 20torr, and $CH_4/H_2$ ratio of 0.3$\sim$1%. The deposited diamond thin films showed that the crystallite was increased at the lower methane concentration. The deposited thin films were characterized by Scanning Electron Microscopy. Raman Spectroscopy and Fourier-Transform Infrared Spectroscopy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.256-256
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• 2010

It is demonstrated that graphene sheets are produced via thermal reduction of graphene oxide (GO) in the presence of imidazoium-based poly (ionic liquid) (PIL). PILs plays an important role in minimizing the reduction time and dispersing graphene sheets in organic solvents. In addition, as-obtained graphene sheets are found to be functionalized with PIL molecules by the strong interaction of PIL and the graphene, as analyzed by various physical methods such as atomic force microscopy (AFM), X-ray photoelectric spectroscopy (XPS) and Raman spectroscopy. Such a strong interaction allows the successful production of graphene/PIL composites, in which their electrical properties are controllable by the loading level of graphene in the PIL matrix.

• Journal of Electrochemical Science and Technology
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• v.11 no.2
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• pp.165-171
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• 2020

The electrochemical preparation and spectroscopic characterisation of iridium-antimony (Ir-Sb) species is important owing to their potential applications as nanostructure materials. Nanostructures, i.e. nanoflower and nanodisk, of Ir-Sb were electrodeposited on conductive substrates using a practical electrochemical method based on the simultaneous underpotential deposition (UPD) of Ir and Sb from the IrCl₃ and Sb₂O₃ at a constant potential. Electrochemical UPD mechanism of Ir-Sb was studied using cyclic voltammetry and potential-controlled electrochemical deposition techniques. Herein, X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy, X-ray photoelectron and Raman spectroscopy were used to determine the morphological and structural properties of the electrochemically-synthesised Ir-Sb nanostructures.

• Bulletin of the Korean Chemical Society
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• v.35 no.8
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• pp.2251-2256
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• 2014

We have successfully decorated reduced graphene oxide (RGO) with silver nanoparticles (AgNPs) by microwaving silver alkylcarbamate for 13 seconds using 1-amino-4-methylpiperazine. Uniform AgNPs (20-40 nm) were effectively prepared, and 1-amino-4-methylpiperazine acted as a reaction medium, reducing agent, and stabilizer. Particle size and morphology were correlated with the silver alkylcarbamate concentration and microwave time. The graphene/AgNPs composites were characterized by Raman, X-ray diffraction, and scanning electron microscopy to confirm that the AgNPs were uniformly decorated onto the graphene. Measurements of the transparent conductive property at room temperature indicated that these graphene/AgNPs nanosheets with 55.45% transmittance were electrically continuous with a sheet resistance of approximately $43{\Omega}/{\Box}$.

• Journal of the Optical Society of Korea
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• v.20 no.1
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• pp.125-129
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• 2016

In this study, we have investigated a high-temperature AlN nucleation layer and AlGaN epilayers on c-plane sapphire substrate by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). High resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscope (SEM) and Raman scattering measurements have been exploited to study the crystal quality, surface morphology, and residual strain of the HT-AlN nucleation layer. These analyses reveal that the insertion of an LT-AlN nucleation layer can improve the crystal quality, smooth the surface morphology of the HT-AlN nucleation layer and further reduce the threading dislocation density of AlGaN epifilms. The mechanism of inserting an LT-AlN nucleation layer to enhance the optical properties of HT-AlN nucleation layer and AlGaN epifilm are discussed from the viewpoint of driving force of reaction in this paper.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1998.10a
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• pp.67-74
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• 1998

Two kinds of polished and unpolished freestanding films prepared by DC plasma CVD method were impacted by SiC particles to understand erosion mechanism. Erosion damage caused by solid impact was characterized by surface profilometer, scanning electron microscopy and Raman spectroscopy. Gradually decrease of surface roughness and sharp reduction of crystallinity for unpolished CVD films were observed with increasing erosion time. It was found that smaller grains of the diamond were removed in early stage of erosion process and larger grains were eroded with further impingement. By introduction of re-growth method on polished diamond, further understanding of erosion mechanism was achieved. Most of the surface fractures were initiated at the grain boundary.

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.1-5
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• 1996

Noncrystalline films of diamond-like carbon (DLC) have been prepared by laser ablation technique at room temperature. A Q-switched Nd-YAG laser beam with wavelength of 1064 nm and pulse duration of 10 ns was focused onto a graphite target with power densities of about $10^9 W/\textrm{cm}^2$. The physical properties of the resulting films were analyzed with density, hardness, and resistivity measurements. The surface and bonding structure were investigated by atomic force microscopy (AFM), Raman spectroscopy, electron energy loss spectroscopy (EELS).

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.77-84
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• 1996

Silicon deposition by Penning discharge was carried out using a mixture of 5% $SiH_4/H_2$ and Ar gas, and the effects of the deposition conditions(gas mixing raito, substrate temperature. discharge power etc.) on the growth rate, crystallinity and morphology of the films deposited were investigated. The magnetic field(800 G) confined the plasma in the region between the two cathodes and enhanced the discharge current by a factor of a few hundreds below 1 mTorr. The magnetic field-enhanced plasma density resulted in a very large deposition rate of about 300 $\AA$/min at $SiH_4$ flow rate of 0.7 sccm and the substrate temperature of $800^{\circ}C$. Characterization of the films by Raman spectroscopy, X-ray diffraction, and scanning electron microscopy revealed that an epitaxial film with a smooth surface grows above 80$0^{\circ}C$, an amorphous film below $400^{\circ}C$, and a rough polycrystalline film at intermediate temperatures.