• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.268-268
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• 2012

Atmospheric pressure microwave induced plasmas are used to excite and ionize chemical species for elemental analysis, for plasma reforming, and for plasma surface treatment. Microwave plasma differs significantly from other plasmas and has several interesting properties. For example, the electron density is higher in microwave plasma than in radio-frequency (RF) or direct current (DC) plasma. Several types of radical species with high density are generated under high electron density, so the reactivity of microwave plasma is expected to be very high [1]. Therefore, useful applications of atmospheric pressure microwave plasmas are expected. The surface characteristics of SUS304 stainless steel are investigated before and after surface modification by microwave plasma under atmospheric pressure conditions. The plasma device was operated by power sources with microwave frequency. We used a device based on a coaxial transmission line resonator (CTLR). The atmospheric pressure plasma jet (APPJ) in the case of microwave frequency (880 MHz) used Ar as plasma gas [2]. Typical microwave Pw was 3-10 W. To determine the optimal processing conditions, the surface treatment experiments were performed using various values of Pw (3-10 W), treatment time (5-120 s), and ratios of mixture gas (hydrogen peroxide). Torch-to-sample distance was fixed at the plasma edge point. Plasma treatment of a stainless steel plate significantly affected the wettability, contact angle (CA), and free energy (mJ/$m^2$) of the SUS304 surface. CA and ${\gamma}$ were analyzed. The optimal surface modification parameters to modify were a power of 10 W, a treatment time of 45 s, and a hydrogen peroxide content of 0.6 wt% [3]. Under these processing conditions, a CA of just $9.8^{\circ}$ was obtained. As CA decreased, wettability increased; i.e. the surface changed from hydrophobic to hydrophilic. From these results, 10 W power and 45 s treatment time are the best values to minimize CA and maximize ${\gamma}$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.9
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• pp.888-895
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• 2004

This paper proposes new miniaturization method of parallel coupled line filter by using capacitors and grounding. Proposed method can reduce resonator size by using only a small number of capacitor and grounding of parallel coupled line filter which is conventional in field of RF filters because of its design and fabrication simplicity. This paper applies the miniaturization method of transmission line and parallel coupled line to parallel coupled line filter, and presents that grounding can reduce the number of shut capacitors. Presented miniaturized method has merits of miniaturization of parallel coupled line, harmonic suppression, and improvement of high frequency skirt with harmonic suppression. For verification of proposed method, this paper presents a hairpin filter, which has 900 MHz center frequency and 10 % FBW, miniaturized to λ/4 by proposed method.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.2 s.105
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• pp.89-94
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• 2006

A compact microstrip band-selective filter for ultra-wideband(UWB) radio system is proposed. The filter combines the traditional short-circuited stub highpass filter and coupled resonator band-stop filter on both sides of the mitered 50-ohm microstrip line. To realize the pseudo-highpass filtering characteristic over UWB frequency band(3.1 GHz to 10.6 GHz), a distributed highpass filter scheme is adopted. Three coupled resonators are utilized to obtain the band stop function at the desired frequency band. By meandering the coupled resonators, there is $29\;\%$ size reduction in footprint compared to the traditional band-stop filter using L-shaped resonators. The measured results show that the filter has a wide passband of $146.7\;\%$(2.1 GHz to 10.15 GHz) with low insertion loss and the stop band of $10.04\;\%$(5.2 GHz to 5.75 GHz) for 3-dB bandwidth. The measured group delay is less than 0.7 ns within the passband except the rejection band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.12
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• pp.1086-1096
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• 2011

In this paper, we present the trisection band-pass filter with a transmission zero at 2.63 GHz, which has a center frequency of 2.44 GHz, relative bandwidth of 5 %, and return loss of 18 dB, based on a multi-port ElectroMagnetic simulation. The coupling matrix for the trisection filter is calculated and this filter is transformed into band-pass filter prototype through a lossless 2-port circuit transformation. The J-inverter values and slope parameters of each individual resonator are computed using an EM simulation Y-parameters of the filter with multi port. The dimensions of desired filter are determined by matching the computed J-inverter and susceptance slope parameters to those of the prototype band-pass filter. Undesired cross-couplings are found to occur which does not appear in the prototype trisection filter. To overcome the problem of undesired couplings, the filter was optimized to satisfy the same frequency response of prototype filter. The validity of the proposed design method was verified through the implementation of the designed and optimized filter.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.88-92
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• 2003

In this paper, the characteristics of the ZnO films deposited on AI bottom electrode and the temperature effects on the ZnO film growth are presented along with the fabrication and their evaluation of the film bulk acoustic wave resonator (FBAR) devices. All the films used in this work were deposited using a radio-frequency (RF) magnetron sputtering technique. Growth characteristics of the ZnO films are shown to have a strong dependence on the deposition temperatures ranged from room temperature to 35$0^{\circ}C$ regardless of the RF power applied for sputtering the ZnO target. In addition, according to the growth characteristics of the distinguishably different micro-crystal structures and the degree of the c-axis preferred orientation, the deposition temperatures can be divided into 3 temperature regions and 2 critical temperatures in-between. Overall, the ZnO films deposited at/below 20$0^{\circ}C$ are seen to have columnar grains with a highly preferred c-axis orientation where the full width at half maximum (FWHM) of X-ray diffraction rocking curve is 14$^{\circ}$. Based on the experimental findings, several FBAR devices were fabricated and measured. As a result, the FBAR devices show return loss of ~19.5dB at resonant frequency of ~2.05GHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.2
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• pp.255-262
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• 2003

In this paper, an investigation on the ZnO film deposition using radio-frequency magnetic sputtering techniques on aluminum bottom electrode for film bulk acoustic wave resonator (FBAR) filter applications and the temperature effects on the ZnO film growth is presented. The investigation on how much impact the actual process temperature may have on the crystal growth is more meaningful if it is considered that the piezoelectricity property of ZnO films plays a dominant role in determining the resonance characteristics of FBAR devices and the piezoelectricity is determined by the degree of the c-axis preferred orientation of the deposited ZnO films. In this experiment, it was found that the growth of ZnO crystals has a strong dependence on the deposition temperature ranged from room temperature to $350^{\circ}C$ regardless of the RF powers applied and there exist 3 temperature regions divided by 2 critical temperatures according to the degree of the c-axis preferred orientation. Overall, below $200^{\circ}C$, ZnO deposition results in columnar grains with a highly preferred c-axis orientation. With this ZnO film, a multilayered FBAR structure could be realized successfully.

• Journal of Navigation and Port Research
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• v.31 no.5 s.121
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• pp.415-420
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• 2007

In this paper, we have designed and fabricated a new type of bandpass-filter that used rectangular ring and interdigital capacitive feeding-structure. The filter is applied the modified rectangular ring and interdigital capacitive feeding-structure in patch, which reduce rho size of filter and IEEE 802. 11 correspond to wireless LAN domain(2.45GHz and 5.2GHz) for operating. As a result, the design and fabrication process of the filter become simple and the size of it is reduced more than 60% compared with RF filter are available conventional PEMBF(Parallel Edge-coupled Microstrip Bandpass Filter) of accounted circuit by minimum stage, measurement result of fabricated filter, center frequence is down 2.408GHz and 5.075GHz. input return loss is -39.169dB at 2.408GHz, -40.922dB at 5.075GHz. insertion loss is -0.437dB at 2.408GHz, -1.669dB at 5.075GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1104-1112
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• 2013

This paper presents a wideband Colpitts voltage controlled oscillator(VCO) with nanosecond startup time and a center frequency of 8.35 GHz for a new bubble-type motion detector that has a bubble-layer detection zone at the specific distance from itself. The VCO circuit consists of two parts; one is a negative resistance part with a HEMT device and Colpitts feedback structure and the other is a resonator part with a varactor diode and shorted shunt microstrip line. The shorted shunt microstrip line and series capacitor are utilized to compensate for the input reactance of the packaged HEMT that changes from capacitive values to inductive values at 8.1 GHz due to parasitic package inductance. By tuning the feedback capacitors which determine negative resistance values, this paper also investigates startup time improvement with the negative resistance variation and tuning bandwidth improvement with the reactance slope variation of the negative resistance part. The VCO measurement shows the tuning bandwidth of 2.3 GHz(28 %), the output power of 4.1~7.5 dBm and the startup time of less than 2 nsec.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.2 s.117
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• pp.126-135
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• 2007

This paper proposes a new miniaturization method for a parallel coupled line filter with enhanced bandwidth characteristics. A previous method incorporated several advantages, such as size reduction through the use of only a small number of capacitors, in addition to grounding, suppression of harmonic characteristics, and improved skirt characteristics for the parallel coupled line filter, which is conventional in the field of RE filters due to its design and fabrication simplicity. However, the previous method also has disadvantages related to the bandwidth shrinkage of the miniaturized filters. In this paper, the amount of bandwidth shrinkage is analyzed in terms of the relationship between the loaded Q(quality factor) and the group delay of a resonator. Moreover, the reduction in the bandwidth is solved by a design with new design equations. To show the validity of the proposed method, a hairpin filter with a center frequency of 5.2 GHz and an fractional bandwidth(FBW) of 10% was scaled down to half its original dimension by the proposed method with the enhanced bandwidth characteristics. The measured result shows a high level of agreement with theoretical results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.1 s.116
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• pp.37-43
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• 2007

In this.paper, we introduce design and implementation results of the single balanced diode mixer for European point-to-point microwave radio in order to improve flatness performance. When a resonator such as RF filter is integrated with a mixer, impedance characteristic of 50 ohm is maintained only in RF band, not in LO band resulting deterioration of flatness performance because of LO power variation on the diode. In the paper, we suggest a design method of mixer integrated with image rejection filter and LO harmonic filter to have a better performance of flatness using embedding electrical length between filter and mixer's port. Frequency specification of fabricated mixer is $21.2{\sim}22.6\;GHz$ for RF, $19.32{\sim}20.72\;GHz$ for LO and 1.88 GHz+/-50 MHz for IF, respectively. Measured results show conversion loss of 8.5 dB, flatness of 2 dB, input PldB of 8 dBm, IIP3 of 15 dBm under LO power level of 10 dBm. Return losses of RF, LO and IF port are under -12 dB, -10 dB and -5 dB, respectively. Isolations of LO/RF and LO/IF are 20 dB and 50 dB, respectively.