FBAR Devices Fabrication and Effects of Deposition Temperature on ZnO Crystal Growth for RF Filter Applications

RF 필터응용을 위한 FBAR 소자제작과 증착온도가 ZnO 박막의 결정성장에 미치는 영향

In this paper, the characteristics of the ZnO films deposited on AI bottom electrode and the temperature effects on the ZnO film growth are presented along with the fabrication and their evaluation of the film bulk acoustic wave resonator (FBAR) devices. All the films used in this work were deposited using a radio-frequency (RF) magnetron sputtering technique. Growth characteristics of the ZnO films are shown to have a strong dependence on the deposition temperatures ranged from room temperature to 35$0^{\circ}C$ regardless of the RF power applied for sputtering the ZnO target. In addition, according to the growth characteristics of the distinguishably different micro-crystal structures and the degree of the c-axis preferred orientation, the deposition temperatures can be divided into 3 temperature regions and 2 critical temperatures in-between. Overall, the ZnO films deposited at/below 20$0^{\circ}C$ are seen to have columnar grains with a highly preferred c-axis orientation where the full width at half maximum (FWHM) of X-ray diffraction rocking curve is 14$^{\circ}$. Based on the experimental findings, several FBAR devices were fabricated and measured. As a result, the FBAR devices show return loss of ~19.5dB at resonant frequency of ~2.05GHz.

본 논문에서는 Al 하부전극 상에서 RF magnetron sputtering 기술을 이용한 ZnO 박막 증착 및 공정온도가 ZnO 결정성장에 미치는 영향을 고려하여 제작한 FBAR 소자에 대한 연구를 발표한다. 결과적으로, 20$0^{\circ}C$의 공정온도에서 주상형 결정립(columnar grain)을 가지고 c축 우선 배향된 ZnO 박막을 얻을 수 있었다. 이렇게 얻은 ZnO 박막을 FBAR 소자에 적용하여 제작한 결과, 2.05GHz의 공진 주파수에서 ~19.5dB의 반사손실을 보였다.