• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.45-49
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• 2014

In this study, we grew non-polar ZnO nanostructure on (1-102) R-plane sapphire substrates. As for growth method of ZnO, we used hydrothermal synthesis which is known to have the advantages of low cost and easy process. For growth of non-polar, the deposited AZO seed buffer layer with of 80 nm on R-plane sapphire by radio frequency magnetron sputter was annealed by RTA(rapid thermal annealing) in the argon atmosphere. After that, we grew ZnO nanostructure on AZO seed layer by the added hexamethylenetramine (HMT) solution and sodium citrate at $90^{\circ}C$. With two types of additives into solution, we investigated the structures and shapes of ZnO nanorods. Also, we investigate the possibility of formation of 2D non-polar ZnO layer by changing the ratio of two additives. As a result, we could get the non-polar A-plane ZnO layer with well optimized additives' concentrations.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.5
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• pp.187-192
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• 2011

Tilt angle of r-plane wafer is a one of the important factors related with the quality of the GaN epi, so the fine control of the tilt angle is important for the growing of high quality non-polar a-GaN epi. We prepared the R-plane sapphire wafers with slight tilt angles for nonpolar a-plane GaN. The target tilt angles of ${\alpha}$ and ${\beta}$ were 0, -0.1, -0.15, -0.2, -0.4, $-0.6^{\circ}$ and -0.1, 0, $0.1^{\circ}$, respectively. The tilt angles of sliced R-plane sapphire wafers were measured by x-ray and the statistical evaluation of reliability of tilt angles of wafers were performed. The tolerance of the tilt angle was ${\pm}0.03^{\circ}$. R-plane sapphire wafers have relatively large distributions of BOW and TTV data than c-plane sapphire wafers due to the large anisotropy of R-plane. As the tilt angle ${\alpha}$ was increased from -0.1 to $-0.6^{\circ}$, the step widths and heights were decreased from 156 nm to 26 nm and 0.4 nm to 0.2 nm, respectively. The growth and qualities of GaN epi seems to be largely affected by the change of step structure of R-plane sapphire wafers with tilt angle.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.37.1-37.1
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• 2011

1990년 나카무라 연구팀에서 청색이 개발된 이래로 LED는 눈부시게 발전해 왔으며, 청색 LED로 인하여 조명용 백색 LED가 급격히 발전하고 있다. 현재까지 개발되고 있는 조명용 백색 LED는 통상적으로 c축 방향의 사파이어 기판위에 GaN film을 성장하여 제작하지만 원천적으로 생기는 자발분극과 압전분극 영향 때문에 양자우물에서의 밴드를 기울게 만들고 이것은 캐리어 재결합율을 감소시켜 그 결과 양자 효율을 낮춘다. 이러한 근본적인 문제를 해결하기 방안은 사파이어 기판에서 c-plane이외의 결정면에서 무분극(혹은 반극성) GaN LED를 성장하여 양자효율을 극대화하여 고효율 LED를 구현할 수 있음. 본 연구에서는 Carbonization mask를 이용하여 r-plane sapphire기판상에 a-plane GaN의 ELOG성장 방법에 대하여 연구하였다. Carbonization mask를 이용하면 기존에 사용되던 SiOx 나 SiNx 막을 사용하지 않고 mask를 만들 수 있다는 장점을 가지고 있으며, 이러한 mask를 이용하여 r-plane sapphire위에 ELOG법을 이용한 a-plane GaN을 성장할 수 있음을 실험을 통해 보이려 한다. ELOG 성장이 이루어 지는지 확인을 위하여 SEM을 통하여 ELOG가 되는 과정을 분석하였으며, 표면의 거칠기를 알아보기 위하여 AFM측정을 시행하였다. 실험 결과 약 20 um 두께로 성장되면서 merge가 되는 것을 확인 하였다.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.3
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• pp.25-32
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• 2011

We have studied on the slicing and polishing processes of R-plane sapphire wafers for the substrates of UHB nonpolar a-plane GaN LED. The fabrication conditions of the R-plane and c-plane wafers were influenced by the large anisotropic properties (mechanical properties) of the sapphire. The slicing process was more affected by the anisotropic properties of R-plane than the polishing process. When the slicing direction was $45^{\circ}$ to the a-flat, the slicing time was shorter and the quality of as-slicing wafers was better than the slicing direction of normal to the a-flat. The MRR(Material removal rate) of mechanical polishing processes such as lapping and DMP(Diamond mechanical polishing) did not show significant differences between the R-plane and c-plane. The MRR of the c-plane was about two times higher than that of R-planes at the CMP(Chemical mechanical polishing) process due to the formation of hydrolysis reaction layers on the surface of the c-plane.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.539-546
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• 2003

The GaN/sapphire layered structure is a potential candidate for high frequency devices due to high acoustic velocity of sapphire. Generally, the GaN thin films are epitaxially grown on c, a, and r-plane sapphire substrates. In this study, wave equations of GaN/sapphire structure were calculated according to crystallographic relationship between GaN layer and sapphire substrate. On each plane, the shear velocity was changed by the kH of GaN layer and propagation direction on sapphire substrate. We found electromechanical coupling constant of r-plane was better than the others. As a result, elastic stiffness and electromechanical coupling constant of materials are affected by a cut and an orientation of substrate. GaN/r-plane sapphire structure is more advantageous for high frequency SAW devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.314.1-314.1
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• 2014

The properties of Ni/Au Ohmic contacts formed on nonpolar a-plane GaN grown on r-plane sapphire substrate with different tilt angles are investigated using current-voltage (I-V) measurements. To investigate the effects of pattern direction and size on Ohmic contact properties of a-plane GaN, transmission line method (TLM) patterns are formed either along c-axis and m-axis on nonpolar GaN surface with different size. I-V measurement results show that the size of TLM pattern and formation direction of electrode have an effect on the electrical properties of a-plane GaN. The large sized patterns show the relatively lower sheet resistance compared to the small sized patterns. In addition, the sheet resistance of a-plane GaN along m-axis shows lower values than that along the c-axis. Finally, the effects of miscut angle of r-sapphire substrate ($0.2^{\circ}$, 0.4oand $0.6^{\circ}$) on electrical properties of a-plane GaN will be discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.3
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• pp.89-94
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• 2016

In this study, the crystalline property of a-plane GaN epitaxial layer grown on r-plane sapphire by a HVPE method has been investigated according to the V/III ratio and the growth time of multi-step growth. Furthermore, these results were compared with the previous result obtained from the single-step growth of a-plane GaN on r-plane sapphire substrate. In the multi-step growth for a-plane GaN epitaxial layer on r-plane sapphire, the FWHM values of rocking curve in GaN epitaxial layer were decreased as the HCl source flow rate and the growth time were increased. The void formed in epitaxial layer was continuously decreased as the growth time in first step and second step using a higher HCl flow rate was increased. As a result, the GaN layer obtained with the longest growth time on the first step and second step exhibited the lowest FWHM values of 584 arcsec and the smallest dependence of azimuth angle.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.923-929
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• 2006

Single crystalline ZnO films were successfully grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy. Epitaxial relationship between the ZnO film and the R-plane sapphire was determined to be $[-1101]Al_2O_3{\parallel}[0001]ZnO,\;[11-20]Al_2O_2{\parallel}[-1100]ZnO$ based on the in-situ reflection high-energy electron diffraction analysis and confirmed again by high-resolution X-ray diffraction measurements. Grown (11-20) ZnO films surface showed mound-like morphology along the <0001>ZnO direction and the RMS roughness was about 4 nm for $2{\mu}m{\times}2{\mu}m$ area.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.208-213
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• 2018

Epitaxial ($11{\bar{2}}0$) a-plane GaN films were grown on a ($1{\bar{1}}02$) R-plane sapphire substrate with photoresist (PR) masks using metal organic chemical vapor deposition (MOCVD). The PR mask with striped patterns was prepared using an ex-situ lithography process, whereas carbonization and heat treatment of the PR mask were carried out using an in-situ MOCVD. The heat treatment of the PR mask was continuously conducted in ambient $H_2/NH_3$ mixture gas at $1140^{\circ}C$ after carbonization by the pyrolysis in ambient $H_2$ at $1100^{\circ}C$. As the time of the heat treatment progressed, the striped patterns of the carbonized PR mask shrank. The heat treatment of the carbonized PR mask facilitated epitaxial lateral overgrowth (ELO) of a-plane GaN films without carbon contamination on the R-plane sapphire substrate. Thhe surface morphology of a-plane GaN films was investigated by scanning electron microscopy and atomic force microscopy. The structural characteristics of a-plane GaN films on an R-plane sapphire substrate were evaluated by ${\omega}-2{\theta}$ high-resolution X-ray diffraction. The a-plane GaN films were characterized by X-ray photoelectron spectroscopy (XPS) to determine carbon contamination from carbonized PR masks in the GaN film bulk. After $Ar^+$ ion etching, XPS spectra indicated that carbon contamination exists only in the surface region. Finally, the heat treatment of carbonized PR masks was used to grow high-quality a-plane GaN films without carbon contamination. This approach showed the promising potential of the ELO process by using a PR mask.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.155-156
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• 2006

Single crystalline ZnO fims were successfully grown on r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. Epitaxial relationship between the ZnO film and the-r-plane sapphire was determined to be [-1101]$Al_2O_3\;{\parallel}$ [0001]ZnO, [11-20]$Al_2O_3\;{\parallel}$ [-1100]ZnO based on the in-situ RHEED analysis and confirmed again by HRXRD measurements. Grown (11-20) ZnO films showed faceted structure along the <0001> direction and the RMS roughness was about 4 nm.