Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Growth and characterization of ZnO thin films on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy

R-면 사파이어 기판 위에 플라즈마 분자선 에피탁시법을 이용한 산화아연 박막의 성장 및 특성평가

  • Han, Seok-Kyu (Department of Materials Science and Engineering, Chungnam National University) ;
  • Hong, Soon-Ku (Department of Materials Science and Engineering, Chungnam National University) ;
  • Lee, Jae-Wook (Korea Advanced Institute of Science and Technology) ;
  • Lee, Jeong-Yong (Korea Advanced Institute of Science and Technology)
  • 한석규 (충남대학교 재료공학과) ;
  • 홍순구 (충남대학교 재료공학과) ;
  • 이재욱 (한국과학기술원 신소재공학과) ;
  • 이정용 (한국과학기술원 신소재공학과)
  • Published : 2006.06.22
Download PDF
⟨ Previous Next ⟩

Abstract

Single crystalline ZnO fims were successfully grown on r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. Epitaxial relationship between the ZnO film and the-r-plane sapphire was determined to be [-1101]$Al_2O_3\;{\parallel}$ [0001]ZnO, [11-20]$Al_2O_3\;{\parallel}$ [-1100]ZnO based on the in-situ RHEED analysis and confirmed again by HRXRD measurements. Grown (11-20) ZnO films showed faceted structure along the <0001> direction and the RMS roughness was about 4 nm.

Keywords