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http://dx.doi.org/10.6111/JKCGCT.2016.26.3.089

Multi-step growth of a-plane GaN epitaxial layer on r-plane sapphire substrate by HVPE method  

Lee, Won-Jun (Advanced Materials Engineering, Electronic Ceramics Center, Dong-Eui University)
Park, Mi-Seon (Advanced Materials Engineering, Electronic Ceramics Center, Dong-Eui University)
Jang, Yeon-Suk (Advanced Materials Engineering, Electronic Ceramics Center, Dong-Eui University)
Lee, Won-Jae (Advanced Materials Engineering, Electronic Ceramics Center, Dong-Eui University)
Ha, Ju-Hyung (LumiGNtech Co., Ltd.)
Choi, Young-Jun (LumiGNtech Co., Ltd.)
Lee, Hae-Yong (LumiGNtech Co., Ltd.)
Kim, Hong-Seung (Department of Nano Semiconductor Engineering, Korea Maritime and Ocean University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.26, no.3, 2016 , pp. 89-94 More about this Journal
Abstract
In this study, the crystalline property of a-plane GaN epitaxial layer grown on r-plane sapphire by a HVPE method has been investigated according to the V/III ratio and the growth time of multi-step growth. Furthermore, these results were compared with the previous result obtained from the single-step growth of a-plane GaN on r-plane sapphire substrate. In the multi-step growth for a-plane GaN epitaxial layer on r-plane sapphire, the FWHM values of rocking curve in GaN epitaxial layer were decreased as the HCl source flow rate and the growth time were increased. The void formed in epitaxial layer was continuously decreased as the growth time in first step and second step using a higher HCl flow rate was increased. As a result, the GaN layer obtained with the longest growth time on the first step and second step exhibited the lowest FWHM values of 584 arcsec and the smallest dependence of azimuth angle.
Keywords
a-Plane GaN; r-Plane sapphire; HVPE; Azimuth angle; Multi step;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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